摘要(英) |
Because the current inspection instruments cannot measure the roughness of the inner and outer layers of the wafer at the same time, and have other shortcomings that are not good for the factory, Atomic Force Microscope (AFM) and Scanning Electron Microscope (SEM) For example, the common thing is that the measurement speed is slow and time-consuming, the machine is large and the power consumption is also required, and the risk of the wafer may be scratched or damaged, and the research purpose of this paper is mainly to improve Measurement efficiency and accuracy, reduce measurement time, and solve contact and destructive measurement methods, as well as support wafers of different sizes or single local regional measurements.
This study uses a two-dimensional electronic sensor to measure wafer roughness, and uses the high input impedance of the operational amplifier to eliminate the offset voltage and reduce the output error. The principle of this study is Use the signal generator to generate an equipotential waveform to form an equipotential field on the surface of the wafer. When the height of the wafer surface is different, the equipotential field will shift, and then there are two points in the X and Y directions. The five-point probe sensor is used to measure the potential and the difference between (X, -X) and (Y, -Y). The electric field generated by the point charge is inversely proportional to the square of the distance, and then the wafer is calculated. The roughness, and the status of each area will also be displayed on the oscilloscope X, Y graph, and record graphs are stored, ΔX and ΔY are the maximum roughness of each axis.
Keyword:Detector, rough measurement, offset voltage, potential difference |
參考文獻 |
[1] 李其紘,“原子力顯微鏡的基本介紹”,科學研習月刊,no. 52-5,2013
[2] 羅聖全,“掃描式電子顯微鏡(SEM)”,科學研習月刊,no. 52-5,2013
[3] 陳坤明, “電子元件的雜訊從何而來”,奈米通訊期刊, vol. 23,no. 4,pp.33- 34,December 2016.
[4] 許源佳,“5.2GHz無線區域網路CMOS低雜訊放大器之設計”,國立暨南國際大學電機工程學系碩士論文,2003.
[5] Retrieved May 9, 2019, from https://zh.wikipedia.org/wiki/%E7%99%BD%E9%9B%9C%E8%A8%8A
[6] 林峻誼,“以平均高低峰值實現低失真雜訊濾波器之研究”,國立中央大學光電科學與工程學系研究所碩士論文,June 2018.
[7] Retrieved May 9, 2019, from https://www.ni.com/zh-tw/innovations/white-papers/06/analog-sample-quality--accuracy--sensitivity--precision--and-noi.html
[8] 許念祖,“利用雜訊抵銷技術之低雜訊放大器設計與分析”,國立中山大學電機工程研究所,July 2008.
[9] 石正瑜,“矽摻硼之阻擋雜質能帶紅外線偵測器之研究”,國立交通大學電子工程學系電子研究所碩士班,October 2009.
[10] 高晋占,“电子噪声与低噪声設計”,北京:清華大學出版社,2016.
[11] Retrieved May 9, 2019, from https://www.ni.com/zh-tw/innovations/white-papers/06/analog-sample-quality--accuracy--sensitivity--precision--and-noi.html
[12] 張皓翔,“InGaAs / InP雪崩二極體單光子感測系統於蓋格模式下的單光子檢測特性探討”,國立臺北科技大學光電工程系,July 2019.
[13] 林俊宏,“基於過驅電壓與電流調校之運算放大器設計方法論”,國立勤益科技大學電子工程系研究所,July 2010.
[14] Retrieved June 1, 2019, from https://wenku.baidu.com/view/c8df68b0cfc789eb162dc87f.html |