摘要(英) |
In this study, technology computer aided design (TCAD) simulations are used to study and build a process flow for producing low gain avalanche diode (LGAD) particle sensors. The LGAD sensor is expected to be used in many high-energy colliders to upgrade the trajectory detectors and improve time resolution. The entire manufacturing process and various mask designs are simulated to understand how each step in the process step and the structure of the LGAD affect its properties. The structural simulation shows that leaving the 10 ~ 15 μm distance between the gain region and the junction termination extension (JTE) can reduce the intensity of the electric field protruding from the edge, which is formed by the gain electric field limited by the JTE. This reduction in intensity can increase the breakdown voltage from 260V to 280V while maintaining the same space utilization, active area, and boundary. Gain simulation provides the definitive standard for determining the range of process parameters. 5×1013 ~ 2×1014 cm-2 boron dose is diffused at least 400 minutes to co-locate with phosphorus diffusion for either 200 or 30 minutes, resulting in the formation of layers with different depths of gain layers. However, even when the boron dose is very high, the gain layer still does not form. Based on the results of the secondary ion mass spectrometer (SIMS), which indicate a discrepancy between the doses and concentration depths in the process flow, we suspect that these mismatched relationships are caused by other factors during the manufacturing process. Therefore, it is inappropriate to establish a relationship between simulation and manufacturing based on this result. The failed modification suggests that modifying the diffusion temperature could be a more dependable approach to resolving similar issues in the future. |
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