銅基金屬輔助蝕刻製作半導體奈米結構及光致發光效應

以作者查詢圖書館館藏

、以作者查詢臺灣博碩士

、以作者查詢全國書目

、勘誤回報

、線上人數：64

、訪客IP：3.137.177.241

姓名

辜偉豪(Wei-Hao Ku) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

銅基金屬輔助蝕刻製作半導體奈米結構及光致發光效應
(Forming semiconductor nanostructures with photoluminescence by copper-based metal-assisted etching)

相關論文

★ 塑膠機殼內部表面處理對電磁波干擾防護研究	★ 研磨頭氣壓分配在化學機械研磨晶圓膜厚移除製程上之影響
★ 利用光導效應改善非接觸式電容位移感測器測厚儀之研究	★ 石墨材料時變劣化微結構分析
★ 半導體黃光製程中六甲基二矽氮烷之數量對顯影後圖型之影響	★ 可程式控制器機構設計之流程研究
★ 伺服沖床運動曲線與金屬板材成型關聯性分析	★ 鋁合金7003與630不銹鋼異質金屬雷射銲接研究
★ 應用銲針尺寸與線徑之推算進行銲線製程第二銲點參數優化與統一之研究	★ 複合式類神經網路預測貨櫃船主機油耗
★ 熱力微照射製作絕緣層矽晶材料之研究	★ 微波活化對被植入於矽中之氫離子之研究
★ 矽/石英晶圓鍵合之研究	★ 奈米尺度薄膜轉移技術
★ 光能切離矽薄膜之研究	★ 氮矽基鍵合之研究

檔案

[Endnote RIS 格式]

[Bibtex 格式]

[相關文章]

[文章引用]

[完整記錄]

[館藏目錄]

至系統瀏覽論文 ( 永不開放)

摘要(中)

本研究是以金屬輔助蝕刻法將銅顆粒為催化劑及HF/H2O2為蝕刻液，在特定的蝕刻時間和電流密度下在各種環境（暗室、日光燈和UV燈）中蝕刻P型矽晶片，以討論其對矽納米結構和光致發光的影響。
我們發現在UV燈照射下深度的蝕刻速率非常慢，但是獲得了緻密的納米結構；此外，在暗室蝕刻和日光燈的照射下，MACE蝕刻存在光致發光現象。

摘要(英)

This research focuses on the metal assistance chemical etching which the copper particles is as the catalyst and HF/H2O2 is the electrolyte. We etched a P-type wafer at various environment (darkroom, luminescence lamp, and UV lamp) at a specificial etching time and current density to discuss its influence on silicon nanostructure and photoluminescence.
We discovered the etching rate in depth is very slow under the UV lamp illumination but obtained a densed nanostructure. Moreover, there is a photoluminescence phenomenon while MACE etching was under darkroom etching and the illumination of luminescence lamp.

關鍵字(中)

★ 多孔矽
★ 金屬輔助化學蝕刻
★ 光致發光

關鍵字(英)

論文目次

摘要………………………………………………………………………………………………?
Abstract…………………………………………………………………………………………?
誌謝………………………………………………………………………………………………?
目錄……………………………………………………………………………………………...?
圖目錄…………………………………………………………………………………………..?
表目錄…………………………………………………………………………………………..?
第一章緒論………………………………………………………………………………….1
1-1前言……………………………………………………………………………………..1
1-2研究目的………………………………………………………………………………2
第二章原理與文獻回顧……………………………………………………………….3
2-1多孔矽……………………………………………………………………………….…3
2-1-1多孔矽的發現……………………………………………………………..3
2-1-2多孔矽理論模型………………………………………………………….4
2-1-2-1貝爾模型(The Beale Model) ………………………………..4
2-1-2-2擴散限制模型(The Diffusion-Limited Model) ………5
2-1-2-3量子模型(The Quantum Model) …………………………..5
2-1-3以電化學方式進行的多孔矽形成機制……………………….6
2-2金屬輔助化學蝕刻法(Metal-assisted Chemical Etching,
MACE)………………………………………………………………….……………..8
2-3用HF/CuCl2進行銅顆粒沉積，以進行MACE產生多孔
矽……………………………………………………………………………………....10
第三章實驗步驟及方法……………………………………………………………..14
3-1實驗流程……………………………………………………………………………..14
3-2實驗耗材與藥品………………………………………………………………….15
3-3實驗器具……………………………………………………………………………..16
3-4實驗分析……………………………………………………………………………..17
3-4-1場發射掃描式電子顯微鏡…………………………………………17
3-4-2穿透式電子顯微鏡…………………………………………………….18
3-4-3光致螢光光譜………………………………………………………….…19
3-5實驗步驟……………………………………………………………………………..20
3-5-1試片的裁切與清洗…………………………………………………….20
3-5-2試片表面沉積銅粒子…………………………………………………20
3-5-3 MACE蝕刻出奈米結構………………………………………………21
第四章結果與討論………………………………………………………………………24
4-1不同沉積時間對銅顆粒形貌之影響………………………………….24
4-2在不同環境下蝕刻對光致發光現象及奈米結構形貌之影
響…………………………………………………………………………………………28
4-2-1在暗室中進行MACE蝕刻..……………………………………….28
4-2-2在日光燈照射下進行MACE蝕刻..……………….………….29
4-2-3在紫外燈照射下進行MACE蝕刻..…………………………..30
4-3光致發光光譜檢測……………………………………………………………..48
4-4 MACE蝕刻原理…………………………………………………………………..53
第五章結論………………………………………………………………………………..54
參考文獻……………………………………………………………………………………….55

參考文獻

[1] R. Feynman,“Plenty of Room at the Bottom”, APS Annual Meeting (1959)
[2] Strehlke, S., et al. "The porous silicon emitter concept applied to multicrystalline silicon solar cells." Thin Solid Films 297.1-2 (1997): 291-295.
[3] Stolyarova, S., et al. "Composite porous silicon-crystalline silicon cantilevers for enhanced biosensing." Sensors and Actuators B: Chemical 131.2 (2008): 509-515.
[4] Patolsky, Fernando, Gengfeng Zheng, and Charles M. Lieber. "Fabrication of silicon nanowire devices for ultrasensitive, label-free, real-time detection of biological and chemical species." Nature protocols 1.4 (2006): 1711.
[5] Hajj?Hassan, Mohamad, et al. "Response of murine bone marrow?derived mesenchymal stromal cells to dry?etched porous silicon scaffolds." Journal of Biomedical Materials Research Part A 99.2 (2011): 269-274.
[6] Cheung, Maurice C-K., et al. "Controlling optical properties and surface morphology of dry etched porous silicon." Journal of Nanophotonics 5.1 (2011): 053503.
[7] McGeough, Joseph A. Principles of electrochemical machining. CRC Press, 1974.
[8] Thang, Cao Xuan, and Vuong-Hung Pham. "Luminescence from micro-/nano-scale anodic aluminum oxide containing electrochemical etching derived nanoporous silicon." Materials Letters 146 (2015): 55-58.
[9] Uhlir Jr, A. "Electrolytic shaping of germanium and silicon." Bell System Technical Journal 35.2 (1956): 333-347.
[10] Fuller, C. S., and J. A. Ditzenberger. "Diffusion of donor and acceptor elements in silicon." Journal of Applied Physics 27.5 (1956): 544-553.
[11] Turner, Dennis R. "Electropolishing silicon in hydrofluoric acid solutions." Journal of the electrochemical Society 105.7 (1958): 402-408.
[12] Archer, R. J. "Stain films on silicon." Journal of Physics and Chemistry of Solids 14 (1960): 104-110.
[13] Watanabe, Y., et al. "Formation and properties of porous silicon and its application." Journal of the Electrochemical society 122.10 (1975): 1351-1355.
[14] Beale, M. I. J., et al. "An experimental and theoretical study of the formation and microstructure of porous silicon." Journal of Crystal Growth 73.3 (1985): 622-636.
[15] Smith, R. L., and S. D. Collins. "Porous silicon formation mechanisms." Journal of Applied Physics 71.8 (1992): R1-R22.
[16] Lehmann, V. "The physics of macropore formation in low doped n?type silicon." Journal of the Electrochemical Society 140.10 (1993): 2836-2843.
[17] Unagami, Takashi. "Formation mechanism of porous silicon layer by anodization in HF solution." Journal of the electrochemical society 127.2 (1980): 476-483.
[18] Dimova-Malinovska, D., et al. "Preparation of thin porous silicon layers by stain etching." Thin Solid Films 297.1-2 (1997): 9-12.
[19] Chartier, C., S. Bastide, and C. Levy-Clement. "Metal-assisted chemical etching of silicon in HF–H2O2." Electrochimica Acta 53.17 (2008): 5509-5516.
[20] Harada, Yoshiko, et al. "Catalytic amplification of the soft lithographic patterning of Si. Nonelectrochemical orthogonal fabrication of photoluminescent porous Si pixel arrays." Journal of the American Chemical Society 123.36 (2001): 8709-8717.
[21] Li, Xiuling, and P. W. Bohn. "Metal-assisted chemical etching in HF/H2O2 produces porous silicon." Applied Physics Letters 77.16 (2000): 2572-2574
[22] Anokhina, Ksenia. "Investigation of metal-assisted Si etching for fabrication of nanoimprint lithography stamps." (2010).
[23] Huang, Zhipeng, et al. "Metal?Assisted Chemical Etching of Silicon: A Review: In memory of Prof. Ulrich Gosele." Advanced materials 23.2 (2011): 285-308.
[24] Chattopadhyay, Soma, Xiuling Li, and Paul W. Bohn. "In-plane control of morphology and tunable photoluminescence in porous silicon produced by metal-assisted electroless chemical etching." Journal of Applied Physics 91.9 (2002): 6134-6140.
[25] Morinaga, Hitoshi, Makoto Suyama, and Tadahiro Ohmi. "Mechanism of metallic particle growth and metal?induced pitting on Si wafer surface in wet chemical processing." Journal of the Electrochemical Society 141.10 (1994): 2834-2841.
[26] Kim, J. S., et al. "The role of metal induced oxidation for copper deposition on silicon surface." Journal of the Electrochemical Society 144.9 (1997): 3275-3283.
[27] Mitsugi, Noritomo, and Kiyoshi Nagai. "Pit formation induced by copper contamination on silicon surface immersed in dilute hydrofluoric acid solution." Journal of The Electrochemical Society 151.5 (2004): G302-G306.
[28] Canham, Leigh T., ed. "Properties of porous silicon." Institution of Electrical Engineers, (1997).

指導教授

李天錫

審核日期

2018-7-23

推文