||The re-distribution layer (RDL) application in high frequency component can include copper lines and bumps, the application of methanesulfonic acid (MSA) plating at this time, due to the copper solution’s ion concentration can be increased and high current density. This method compared with the traditional copper sulfate plating could save more costs, but the dense line of photo-resist under this application is easily crack after plating procedure. Therefore, in order to avoid short circuit and reduce the risk of secondary plating, and then increase the stability of the process, this study used experimental methods to test the different process conditions, and gradually to clarify the cause of the non-influencing factors of photoresist crack such as soft roasting temperature, soft roasting time, exposure, exposure spacing, light source type, circuit pattern, plating additive, plating deposition rate, etc., and influencing factors including photoresist thickness, copper plating thickness, photoresist size .After those study, we could got the key factors that can affect the number of defects. According to the experimental results, the design guidelines is summarized. Such as copper thickness 12μm, the photoresist width greater than or equal to 10 or more. That spacing is greater than and Equal to 10 or more. The cracking of the photo-resist does not occur after plating. The photoresist of the re-distribution layer keeps complete to next stage, and the risk of copper plating and short were reduced. The results show that this photoresist crack defects will be matched by the process conditions, this defect has been significantly improved.|
王家鴻，「Solder Bump製程應用在Wafer Level CSP RDL結構可靠度提升 Study」，國立交通大學，碩士論文，民國九十九年。
蔡文勇，「I-line光阻劑於TFT LCD Array製程之應用及評估」，國立中央大學，碩士論文，民國九十五年。
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