超強耦合高分子發光二極體之研究

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姓名

林煒紘(Wei-Hong Lin) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

超強耦合高分子發光二極體之研究
(Study of polymer light-emitting diode operating in the ultrastrong coupling regime)

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至系統瀏覽論文 (2025-1-14以後開放)

摘要(中)

本論文主要研究在共振激發機制下的電致發光偏極子元件，我們以高分子材料MDMO-PPV同時作為激子庫與光子源，透過共振腔式倒置型高分子發光二極體的設計，實現高分子材料的激子能量與共振腔光子模態的強耦合作用，並使電激發的光源直接激發偏極子能態發光，與一般元件相比，可以減少偏極子散射的損耗，提升元件發光效率。
在加入電子傳輸層ZnO優化元件後，實驗得到元件的外部量子效率約為0.14 %，偏極子集中於下支低角度發光，拉比分裂能量為600 meV，耦合因子有22.9 %，屬於超強耦合的範疇。而在強弱耦合元件發光效率的比較下，推測ZnO鍍在不同膜面上的電子注入效果不同，並以單載子元件的實驗證明。

摘要(英)

In this thesis, the electrically pumped polariton device operating in the resonant pumping regime was studied. We used polymer material MDMO-PPV as both exciton reservoir and photon source. Via design of microcavity inverted polymer light-emitting diode, strong coupling between exciton energy of polymer material and photon mode of microcavity was achieved. And the electrically excited light source can directly pump the polariton energy state to emit light. In contrast to general device, it can reduce the loss of polariton scattering and improve the luminescence efficiency.
After adding electron transport layer ZnO for optimizing the device, the experiment have shown that external quantum efficiency is 0.14% and light-emitting polaritons gather in the lower branch at low angle. Rabi splitting energy is 600 meV which corresponds to a coupling factor = 22.9 %. It reach the ultrastrong coupling regime. Comparing the luminescence efficiency of strong coupling device with weak coupling device, we guess that the electron injection capability of ZnO deposited on the different film are different and prove by experimental result of electron-only device.

關鍵字(中)

★ 偏極子
★ 強耦合
★ 超強耦合

關鍵字(英)

★ Polariton
★ Strong coupling
★ Ultrastrong coupling

論文目次

摘要 i
Abstract ii
誌謝 iii
目錄 v
圖目錄 ix
第一章緒論 1
1-1 高分子發光二極體 1
1-2 偏極子(Polariton) 2
1-3 偏極子元件 2
1-4 研究動機 8
第二章基本原理 9
2-1 激子 9
2-2 微共振腔中的光子模態 10
2-3 強耦合理論 12
2-4 瓶頸效應與共振激發 16
2-5 薄膜光學理論 20
2-5-1 折射率與消光係數 20
2-5-2 單介面之反射與透射 21
2-5-3 單層膜之反射與透射 23
2-5-4 電場分布 26
2-6 有機發光二極體之工作原理 27
2-6-1 有機發光二極體的結構 27
2-6-2 注入限制電流(Injection-Limited Current) 28
2-6-3 空間電荷限制電流(SCL Current) 29
2-6-4 外部量子效率 30
第三章實驗方式與步驟 31
3-1 實驗材料 31
3-2 實驗步驟 32
3-2-1 元件結構 32
3-2-2 基板清洗 33
3-2-3 元件製程 33
3-3 實驗儀器 34
3-3-1 熱蒸鍍系統 34
3-3-2 手套箱 36
3-3-3 旋轉塗佈機 36
3-3-4 半導體參數分析儀與光電二極體 37
3-3-5 光纖量測系統 39
3-3-6 紫外/可見/紅外光光譜儀 40
3-3-7 積分球光譜儀(Integrating Sphere) 41
3-3-8 即時多角度光譜量測系統 42
3-3-9 原子層沉積系統 46
第四章實驗結果與分析 47
4-1 自激發強耦合層材料MDMO-PPV 47
4-2 退火溫度對OLED元件的影響 49
4-3 強耦合共振腔元件設計與模擬 50
4-4 實驗結果與分析 53
4-4-1 正向型強耦合共振腔 53
4-4-2 倒置型強耦合共振腔 54
4-4-3 實驗分析 64
第五章結論與未來展望 67
參考文獻 68

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指導教授

張瑞芬(Jui-Fen Chang)

審核日期

2020-1-14

推文