博碩士論文 106226063 詳細資訊




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姓名 羅郁仁(YU-REN LUO)  查詢紙本館藏   畢業系所 光電科學與工程學系
論文名稱 無機/有機異質界面垂直發光電晶體之研究
(Inorganic/Organic Hybrid Vertical Light-Emitting Transistor)
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檔案 [Endnote RIS 格式]    [Bibtex 格式]    [相關文章]   [文章引用]   [完整記錄]   [館藏目錄]   至系統瀏覽論文 (2025-1-14以後開放)
摘要(中) 本論文主要研究下注入式垂直式發光電晶體,主要架構為氧化鋅電晶體上堆疊有機發光二極體。氧化鋅電晶體為上接觸/下閘極的結構,以透明導電膜為閘極,使用原子層沉積,沉積高介電係數的三氧化二鋁與氧化鉿作為雙層介電層,及N型材料氧化鋅作為半導體層,載子遷移率高達11-12 cm2/Vs。形成低驅動電壓、低接觸電阻及高電子流密度之橫向電晶體。將橫向電晶體源極與汲極接觸作為垂直式發光電晶體源極,以光阻墊高劑與光阻雙層結構,透過光學微影技術,在源極金屬上鍍製絕緣層氧化矽,抑制關電流密度,並有效提高開/關電流比。使用綠光有機材料PFO:F8BT作為發光層。以閘極電壓3V驅動,可得到高電流密度1 A/cm2及高開/關比105-106的下出光垂直發光電晶體,而外部量子效率也接近對應的有機發光二極體的外部量子效率。發光區可由光學微影將氧化鋅圖案化,明確定義發光面積,且能達到次微米等級,具有高開口率等優勢。
摘要(英) This thesis mainly studies on down-injection vertical light-emitting transistors (VLET) which is demonstrated by integration of a ZnO transistor and organic light-emitting diode (OLED). The zinc oxide transistor is a top-contact / bottom-gate structure, a transparent conductive film is used as a gate. Atomic layer deposition (ALD) is used to deposit aluminum oxide and hafnium oxide, which are the high dielectric constant material, as a double dielectric layers and N-type material zinc oxide as a semiconductor layer, the mobility is as high as 11-12 cm2 / Vs. Thus the lateral transistor has low driving voltage, low contact resistance and high electron current density. The source and the drain of the lateral transistor contact together as the source of VLET. With the double-layer structure of LOR and photoresist, through the optical lithography technology, an insulating layer of silicon oxide (SiOx) is deposited on the source to reduce the off-current density, and to improve the on / off current ratio. Use the green organic material PFO: F8BT as the light-emitting layer. Driven by a gate voltage of 3V, the bottom-emission vertical light-emitting transistor produces high current density 1A/cm2 and high on / off ratio 105-106, and the external quantum efficiency(EQE) is close to the EQE of corresponding OLED. The ZnO layer can be patterned by optical lithography to clearly define ligt emitting area, and can reach the sub-micron level, which has the advantages of high aperture ratio and so on.
關鍵字(中) ★ 無機/有機異質界面
★ 垂直發光電晶體
關鍵字(英) ★ Inorganic/Organic Hybrid
★ Vertical Light-Emitting Transistor
論文目次 摘要 i
Abstract ii
致謝 iii
目錄 iv
圖目錄 vii
表目錄 xii
第一章 緒論 1
1-1前言 1
1-2場效電晶體 2
1-3 垂直式電晶體 3
1-4 有機發光二極體 9
1-5 研究目的與動機 10
第二章基礎原理 12
2-1場效電晶體 12
2-1-1場效電晶體基本架構 13
2-1-2場效電晶體之工作原理 15
2-1-3場效電晶體之電流對電壓關係與重要參數 19
2-2垂直式電晶體之工作原理 22
2-1-1垂直電晶體-轉換特性曲線與開/關電流比 27
2-3有機發光二極體之工作原理 28
2-3-1有機發光二極體結構與理論 28
2-3-2量子效率(Quantum Efficiency) 31
第三章 實驗方法與架構 33
3.1 實驗架構及材料介紹 33
3-1-1 介電層材料 34
3-1-2 半導體層材料介紹 35
3-1-3 有機發光層材料介紹 36
3-1-4 金屬電極材料介紹 36
3-2 實驗儀器 37
3-2-1 手套箱(Glove Box) 37
3-2-2 熱蒸鍍機(Thermal Evaporation Coater) 38
3-2-3 原子層沉積(Atomic Layer Deposition, ALD) 39
3-2-5 紫外光臭氧清洗機(UV-Ozone) 41
3-2-5 手動光罩接合對準器(Mask and Bond Aligner) 42
3-2-7 半導體參數分析儀(Semiconductor Parameter Analyzer, SPA) 43
3-2-8 場發射掃描式電子顯微鏡(Field-Emission Scanning Electron Microscopy, FE-SEM) 44
3-2-9 阻抗分析儀 (LF Impedance Analyzer) 47
3-3 實驗方法與製備 48
3-3-1 橫向電晶體元件製程 48
3-3-2 倒置結構有機發光二極體元件製程 52
3-3-3 垂直發光電晶體製程 55
第四章 結果與討論 58
4-1氧化鋅橫向電晶體 58
4-2倒置結構(Inverted structure)OLED 62
4-3低電壓驅動下注入式垂直發光電晶體 65
4-3-1 阻擋層SiOx 65
4-3-2 下注入式氧化鋅垂直電晶體 67
4-3-3 下注入式垂直發光電晶體 70
第五章 結論與未來展望 76
參考文獻 77
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指導教授 張瑞芬(Jui-Fen Chang) 審核日期 2020-1-15
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