博碩士論文 106226069 詳細資訊




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姓名 高煒盛(Wei-Cheng Kao)  查詢紙本館藏   畢業系所 光電科學與工程學系
論文名稱 p 型BN的電極製程與分析
(Fabrication and characterization of metal contact on p-type Boron Nitride)
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摘要(中) 氮化鋁鎵(AlGaN)是深紫外光發光二極體[deep ultraviolet light emitting diode (DUV -LED), 波長<290 nm ]最常使用的材料。然而,含有氮化鋁鎵的DUV LED,儘管經過十多年的研究開發,其外部量子效應(external quantum efficiency, EQE)始終難以超越10%。這歸咎於p 型AlxGaN1-x的活化能(active energy)非常高(170 – 510 meV),導致電洞注入效率不高,因此p-AlxGaN1-x的導電率很低。我們使用了氮化硼(boron nitride, BN)來取代氮化鋁鎵(AlGaN),BN的電洞活化能遠低於AlGaN,還有很高的化學穩定性和熱穩定性,這些都是DUV -LED需要的特質。為了評估p 型BN(p-BN)的電性,我們以霍爾量測(Hall measurement)分析不同的金屬電極、退火條件以及不同磊晶條件的p-BN,希望能以p-BN形成歐姆接觸(ohmic contact)。我們發現,在p-BN表面加上一層厚度約3-nm的InGaN接觸層,或降低BN磊晶的五三比,能有效降低p-BN的接觸電阻。
摘要(英) Aluminum gallium nitride (AlGaN) is the most commonly used material for deep ultraviolet light emitting-diodes (DUV LEDs, emission wavelength < 290 nm). However, the external quantum efficiencies (EQEs) of DUV LEDs rarely reach 10 %, despite years of research efforts. The main reason is the extremely high activation energies of conventional acceptors in p-type AlxGa1-xN (170 – 510 meV). This intrinsic drawback subsequently results in low hole injection efficiency, and accordingly the conductivity of p-AlxGa1-xN. To overcome the difficulty, we employ boron nitride (BN) as the alternative to p-type AlGaN. BN is reported to exhibit much lower acceptor activation energy than AlGaN, in addition to her high chemical and thermal stability. These are attractive merits for the applications in DUV LEDs. To evaluate the electrical properties of p-type BN (p-BN), we systematically characterized p-BN with Hall measurements using different metal electrodes, annealing conditions, growth pressure, and V/III ratios with the intention to achieve ohmic contact on the two-dimensional layer. It is found that adding a 3-nm InGaN contact layer on the surface, or reducing the V/III ratio, can effectively reduce the contact resistance of p-BN.
關鍵字(中) ★ 電極
★ 氮化硼
★ 紫外光
★ 活化能
★ 外部量子效應
★ 退火
關鍵字(英)
論文目次 論文摘要.......................................................................................... Ⅰ
Abstract.......... ....................................................................... .......... Ⅱ
致謝................................................................................................... Ⅲ
目錄...... ...... ...... ...... ....................................................................... Ⅳ
圖目錄................................................................................................ Ⅵ
表目錄................................................................................................ Ⅷ
第一章、 緒論
1.1前言............................................1
1.2深紫外光LED的技術現況..........................4
1.3 BN的優勢與難題..............................7
1.4研究動機與章節架構..............................9

第二章、實驗原理、方法與儀器
2.1製程步驟........................................11
2.2 TLM量測原理....................................13
2.3霍爾量測原理....................................15
2.4高真空電子束暨熱阻式蒸鍍機(Egun&Thermal)........18
2.5快速熱退火(RTA).................................20


第三章、分析與討論
3.1 p 型氮化鎵活化能的量測..........................22
3.2金屬電極與退火條件對p 型BN電性的影響........27
3.3磊晶結構對p 型BN電性的影響..................34
3.3.1 InGaN穿隧層的影響...........................34
3.3.2五三比的影響.................................42

第四章、結論與未來展望
4.1結論............................................46
4.2未來發展........................................47

參考文獻............................................48
參考文獻 [1] The electromagnetic spectrum , Available at: https://xpfamilysupport.org/learn/what-is-uv/

[2]Application of UVA,UVB,UVC, Available at:
https://www.green-sources.com/uvc.html

[3] M. Kneissl, J. Rass, A brief review of III – Nitrides UV emitter Technologies and their applications, III – Nitride Ultraviolet Emitters. Springer series in Materials Science 227, Springer International Publishing, Switzerland (2016).

[4] H. X. Jiang, and J. Y. Lin, Hexagonal boron nitride for deep ultraviolet photonic devices. Semicond. Sci. Technol. 29, 084003 (2014).

[5] M. Soltani, R. Soref, T. Palacios, and D. Englund, AlGaN/AlN integrated photonics platform for the ultraviolet and visible spectral range. Optics Express 24, 25415 (2016).

[6] M.Noritoshi and H.Hideki, Realization of high efficiency deep UV LEDs using transparent p-AlGaN contact layer. Phys. Status Solidi C 10, 1521 (2013).

[7]TLM measurement, Available at: https://www.ir.nctu.edu.tw/bitstream/11536/51935/9/151609.pdf

[8]Hall measurement, Available at: http://ezphysics.nchu.edu.tw/prophys/basicexp/expnote/hall/hall_920703.pdf

[9] 劉文獻, 提升p 型Al0.5Ga0.5N歐姆接觸電極的導電性及反射率.
國立中央大學. 碩士論文 (2018)



[10] D. J. Kim, D. Y. Ryu, N. A. Bojarczuk, J. Karasinski, S. Guha, S. H. Lee, and J. H. Lee, Thermal activation energies of Mg in GaN:Mg measured by the Hall effect and admittance spectroscopy. J. Appl. Phys. 88, 2564 (2000).

[11] Jin-Kuo Ho, Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films. Appl. J. Appl. Phys. 86, 4491 (1999).

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[13] Li Xiao-Jing, Zhao De-Gang, He Xiao-Guang, and Wu Liang Liang, Influence of different annealing temperature and atmosphere on the Ni/Au Ohmic contact to p-GaN. Acta Phys. Sin. 62 (2013).

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[16] S. Nikishin, Mechanism of carrier injection in (Ni/Au)/p-AlxGa1-xN:Mg (0≤x≤0.1) Ohmic contacts. Appl. Physics Letters. 95, 163502 (2009).

[17] Jin-Kuo Ho, Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films. J. Appl. Phys. 86, 4491 (1999).

[18] Han-Ki Kim, Tae-Yeon Seong, Ilesanmi Adesida, Chak Wah Tang, and Kei May Lau, Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN. Appl. Phys. Letters 84, 1710 (2004).

[19] HL5500PC Hall effect Measurement System – Opearating Manual, Accent.



[20] Dong-Joon Kim, Effect of Growth pressure on Indium Incorporation During the Growth of InGaN by MOCVD. JEM. 30, 99 (2001).

[21] Qing S. Paduano , Michael Snure and Jodie Shoaf , Effect of V/III ratio on the growth of hexagonal boron nitride by MOCVD. Mater. Res. Soc. Symp. Proc. 1726 (2015).
指導教授 賴昆佑 審核日期 2020-1-17
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