博碩士論文 106324002 詳細資訊




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姓名 陳宜慶(Yi-Ching Chen)  查詢紙本館藏   畢業系所 化學工程與材料工程學系
論文名稱 鎳矽化物/矽單晶異質奈米錐陣列之製備及其近紅外光感測特性研究
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摘要(中) 在本研究中,我們在矽晶基材上利用奈米球微影技術結合金屬催化蝕刻法以一步驟蝕刻來製備大面積之規則矽單晶奈米錐陣列,並將製程技術發展,成功於基材兩面製備出雙面型矽單晶奈米錐結構試片。接著蒸鍍鎳金屬薄膜於奈米錐側壁上,透過熱退火處理使鎳金屬與矽基材反應生成鎳矽化物,並藉由相鑑定得知為二鎳化矽結構。透過光譜儀量測上述結構可發現,鎳金屬可大幅改善矽基材近紅外光波段吸收性,且經由退火製程形成鎳矽化物後又可再次提升,而雙面型奈米錐試片的背部結構會增加整體光學穿透率,若同時於正面製備成異質結構,單面型奈米錐試片在紅外光波段會具有較佳的吸收率,加入背電極鋁後於1200-1600 nm波長範圍平均吸收率可達95%。進一步量測結構的光感測性質發現,在940 nm近紅外光源照射下,鎳/矽奈米錐/矽製備成鎳矽化物/矽奈米錐/矽結構可提升其響應光電流,而鎳矽化物/矽奈米錐/矽/矽奈米錐結構反應出較低的暗電流,但光電流也同時下降。對最高響應光電流的鎳矽化物/矽奈米錐/矽結構做響應度與響應時間量測,該元件表現出不錯的響應速度,且各結構元件均可於零偏壓下運作,實現了自驅動光感測的特性。
摘要(英) In this study, we based on the nanosphere lithography and one-step Au-assisted chemical etching process to fabricate single-sidde and double-sided vertically-aligned Si nanocone arrays on p-type (001) Si substrates. In order to enhance the near-infrared absorption, Ni thin film was deposited on the sidewall of the Si nanocone and followed by silicide process. The TEM and SAED analysis indicated that the formation of silicide phase is single-crystalline NiSi_2. UV-Vis-IR spectroscopic measurements showed that Ni thin film can dramatically improve the near-infrared absorption. If Ni thin film become to NiSi_2 thin film by silicide process, it showed the higher absorptance than Ni thin film, which have promising applications in near-infrared photodetector. The produced Ni or NiSi_2/Si nanocone heterostructure exhibited rectification property by Schottky contact and generated photocurrent under 940 nm illumination at zero bias voltage. The obtained results presented a novel structure of Si-base near-infrared photodetector. It has high light trapping ability, fast response and operation in zero bias. This work offer a relative cheap and fast process compared with other Si-base near-infrared photodetectors.
關鍵字(中) ★ 奈米球微影
★ 金屬催化蝕刻
★ 奈米錐
★ 鎳矽化物
★ 近紅外光偵測器
關鍵字(英)
論文目次 第一章 前言及文獻回顧 1
1-1 前言 1
1-2 矽基表面粗糙化結構 2
1-2-1 矽單晶表面粗糙化結構 2
1-2-2 雙面矽單晶奈米粗糙化結構 4
1-2-3 金屬矽化物奈米粗糙化結構 4
1-3 矽晶紅外光吸收機制 5
1-3-1 缺陷間接吸收 5
1-3-2 雙光子吸收 6
1-3-3 內部光發射吸收 7
1-4 矽基蕭特基二極體 9
1-4-1 金屬與半導體接觸理論 9
1-4-2 矽基蕭特基紅外光偵測器 11
1-5 研究動機與目標 12
第二章 實驗步驟及儀器設備 14
2-1 實驗步驟 14
2-1-1 矽晶基材使用前處理 14
2-1-2 奈米球陣列模板製備 14
2-1-3 奈米球微影術結合金屬催化蝕刻法製備矽單晶奈米錐陣列 15
2-1-4 鎳矽化物奈米錐陣列製備 15
2-1-5 蕭特基光偵測器製備 16
2-2 儀器設備 16
2-2-1 掃描式電子顯微鏡 16
2-2-2 穿透式電子顯微鏡 17
2-2-3 影像式水滴接觸角測量儀 17
2-2-4 可見光-近紅外光光譜儀 18
2-2-5 近紅外光偵測系統 18
第三章 結果與討論 19
3-1 大面積週期性排列之矽單晶奈米錐陣列 19
3-1-1 聚苯乙烯奈米球模板製備 19
3-1-2 週期性排列之準直矽單晶奈米錐陣列結構製備 20
3-1-3 雙面週期性排列之準直矽單晶奈米錐陣列結構製備 21
3-1-4 單面與雙面矽單晶奈米錐陣列之光譜量測與分析 22
3-2 鎳矽化物/矽單晶奈米錐陣列 24
3-2-1 鎳/矽單晶奈米錐陣列結構製備 24
3-2-2 鎳矽化物/矽單晶奈米錐陣列結構製備 25
3-2-3 鎳與鎳矽化物/矽單晶奈米錐陣列之光譜量測與分析 27
3-3 矽基蕭特基光偵測器近紅外光感測特性量測與探討 29
3-2-1 蕭特基光偵測器之製備與電性量測 29
3-2-2 蕭特基光偵測器近紅外光感測響應度與響應時間 32
第四章 結論與未來展望 34
參考文獻 35
表目錄 43
圖目錄 45
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指導教授 鄭紹良 審核日期 2019-8-19
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