|| G. Wang, Z. Li, M. Li, J. Liao, C. Chen, S. Lv, and C. Shi, “Enhanced field-emission of silver nanoparticle-graphene oxide decorated ZnO nanowire arrays,” Phys. Chem. Chem. Phys. 17 (2015) 31822-31829.|
 H. C. Chang, H. J. Tsai, W. Y. Lin, Y. C. Chu, and W. K. Hsu, “Hexagonal boron nitride coated carbon nanotubes: interlayer polarization improved field emission,” ACS Appl. Mater. Interfaces 7 (2015) 14456-14462.
 C. Clavero, “Plasmon-induced hot-electron generation at nanoparticle/metal-oxide interfaces for photovoltaic and photocatalytic devices,” Nat. Photonics 8 (2014) 95-103.
 X. Zhang, Y. Liu, S.-T. Lee, S. Yang, and Z. Kang, “Coupling surface plasmon resonance of gold nanoparticles with slow-photon-effect of TiO2 photonic crystals for synergistically enhanced photoelectrochemical water splitting,” Energy Environ. Sci. 7 (2014) 1409.
 M. Grajower, U. Levy, and J. B. Khurgin, “The role of surface roughness in plasmonically assisted internal photoemission schottky photodetectors,” ACS Photonics 5 (2018) 4030-4036.
 B. D. Boruah, S. N. Majji, and A. Misra, “Surface photo-charge effect in doped-ZnO nanorods for high-performance self-powered ultraviolet photodetectors,” Nanoscale 9 (2017) 4536-4543.
 P. S. Shewale and Y. S. Yu, “Structural, surface morphological and UV photodetection properties of pulsed laser deposited Mg-doped ZnO nanorods: Effect of growth time,” J. Alloys Compd. 654 (2016) 79-86.
 R. Dewan, S. Shrestha, V. Jovanov, J. Hüpkes, K. Bittkau, and D. Knipp, “Random versus periodic: Determining light trapping of randomly textured thin film solar cells by the superposition of periodic surface textures,” Sol. Energy Mater Sol. Cells 143 (2015) 183-189.
 F. Zhuge, Z. Zheng, P. Luo, L. Lv, Y. Huang, H. Li, and T. Zhai, “Nanostructured materials and architectures for advanced infrared photodetection,” Adv. Mater. Technol. 2 (2017) 1700005.
 P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J. M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. van Veldhoven, R. Nötzel, and M. K. Smit, “InP/InGaAs photodetector on SOI photonic circuitry,” IEEE Photon. J. 2 (2010) 299-305.
 A. M. Itsuno, J. D. Phillips, and S. Velicu, “Mid-wave infrared HgCdTe nBn photodetector,” Appl. Phys. Lett. 100 (2012) 161102.
 I. Kimukin, N. Biyikli, T. Kartaloglu, O. Aytur, and E. Ozbay, “High-speed InSb photodetectors on GaAs for Mid-IR applications,” IEEE J. Sel. Top. Quantum Electron. 10 (2004) 766-770.
 J. Werner, M. Oehme, M. Schmid, M. Kaschel, A. Schirmer, E. Kasper, and J. Schulze, “Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy,” Appl. Phys. Lett. 98 (2011) 061108.
 J. W. Zeller, H. Efstathiadis, G. Bhowmik, P. Haldar, N. K. Dhar, J. Lewis, P. Wijewarnasuriya, Y. R. Puri, and A. K. Sood, “Development of Ge PIN photodetectors on 300 mm Si wafers for near-infrared sensing,” Int. J. Engr. Res. Tech. 8 (2015) 23-33.
 B. Das, N. S. Das, S. Sarkar, B. K. Chatterjee, and K. K. Chattopadhyay, “Topological insulator Bi2Se3/Si-nanowire-based p-n junction diode for high-performance near-infrared photodetector,” ACS Appl. Mater. Interfaces 9 (2017) 22788-22798.
 A. V. Shevlyagin, D. L. Goroshko, E. A. Chusovitin, K. N. Galkin, N. G. Galkin, and A. K. Gutakovskii, “Enhancement of the Si p-n diode NIR photoresponse by embedding beta-FeSi2 nanocrystallites,” Sci. Rep. 5 (2015) 14795.
 I. Goykhman, B. Desiatov, J. Khurgin, J. Shappir, and U. Levy, “Locally oxidized silicon surface-plasmon Schottky detector for telecom regime,” Nano Lett. 11 (2011) 2219-2224.
 B. Desiatov, I. Goykhman, N. Mazurski, J. Shappir, J. B. Khurgin, and U. Levy, “Plasmonic enhanced silicon pyramids for internal photoemission Schottky detectors in the near-infrared regime,” Optica 2 (2015) 335.
 Z. Qi, Y. Zhai, L. Wen, Q. Wang, Q. Chen, S. Iqbal, G. Chen, J. Xu, and Y. Tu, “Au nanoparticle-decorated silicon pyramids for plasmon-enhanced hot electron near-infrared photodetection,” Nanotechnology 28 (2017) 275202.
 S. Li, Z. Pei, F. Zhou, Y. Liu, H. Hu, S. Ji, and C. Ye, “Flexible Si/PEDOT:PSS hybrid solar cells,” Nano Res. 8 (2015) 3141-3149.
 E. Mottay, X. Liu, H. Zhang, E. Mazur, R. Sanatinia, and W. Pfleging, “Industrial applications of ultrafast laser processing,” MRS Bulletin 41 (2016) 984-992.
 Y. Su, X. Zhan, H. Zang, Y. Fu, A. Li, H. Xu, S.-L. Chin, and P. Polynkin, “Direct and stand-off fabrication of black silicon with enhanced absorbance in the short-wavelength infrared region using femtosecond laser filament,” Appl. Phys. B 124 (2018) 223.
 H. F. Yan, Y. J. Xing, Q. L. Hang, D. P. Yu, Y. P. Wang, J. Xu, Z. H. Xi, and S. Q. Feng, “Growth of amorphous silicon nanowires via a solid–liquid–solid mechanism,” Chem. Phys. Lett. 323 (2000) 224-228.
 D. P. Yu, Y. J. Xing, Q. L. Hang, H. F. Yan, J. Xu, Z. H. Xi, and S. Q. Feng, “Controlled growth of oriented amorphous silicon nanowires via a solid-liquid-solid (SLS) mechanism,” Physica E 9 (2001) 305-309.
 Y. Wang, K. Lew, T. Ho, L. Pan, S. Novak, E. Dickey, J. Redwing, and T. Mayer, “Use of phosphine as an n-type dopant source for vapor−liquid−solid growth of silicon nanowires,” Nano Lett. 5 (2005) 2139-2143.
 K. K. Lew and J. M. Redwing, “Growth characteristics of silicon nanowires synthesized by vapor–liquid–solid growth in nanoporous alumina templates,” J. Cryst. Growth 254 (2003) 14-22.
 R. Q. Zhang, Y. Lifshitz, and S. T. Lee, “Oxide-assisted growth of semiconducting nanowires,” Adv. Mater. 15 (2003) 635-640.
 Y. Yao, F. Li, and S.-T. Lee, “Oriented silicon nanowires on silicon substrates from oxide-assisted growth and gold catalysts,” Chem. Phys. Lett. 406 (2005) 381-385.
 H.-C. Chang, K.-Y. Lai, Y.-A. Dai, H.-H. Wang, C.-A. Lin, and J.-H. He, “Nanowire arrays with controlled structure profiles for maximizing optical collection efficiency,” Energy Environ. Sci. 4 (2011) 2863.
 L. A. Osminkina, K. A. Gonchar, V. S. Marshov, K. V. Bunkov, D. V. Petrov, L. A. Golovan, F. Talkenberg, V. A. Sivakov, and V. Y. Timoshenko, “Optical properties of silicon nanowire arrays formed by metal-assisted chemical etching: evidences for light localization effect,” Nanoscale Res. Lett. 7 (2012) 524.
 H. A. A. OIDE, S. ONO, “Fabrication of ordered nanostructure on silicon substrate using localized anodization and chemical etching,” Electrochemistry 74 (2006) 379-384.
 P. Yu, J. Wu, S. Liu, J. Xiong, C. Jagadish, and Z. M. Wang, “Design and fabrication of silicon nanowires towards efficient solar cells,” Nano Today 11 (2016) 704-737.
 H. Lin, H.-Y. Cheung, F. Xiu, F. Wang, S. Yip, N. Han, T. Hung, J. Zhou, J. C. Ho, and C.-Y. Wong, “Developing controllable anisotropic wet etching to achieve silicon nanorods, nanopencils and nanocones for efficient photon trapping,” J. Mater. Chem. A 1 (2013) 9942.
 Q. Yang, X. A. Zhang, A. Bagal, W. Guo, and C. H. Chang, “Antireflection effects at nanostructured material interfaces and the suppression of thin-film interference,” Nanotechnology 24 (2013) 235202.
 P. Campbell and M. A. Green, “Light trapping properties of pyramidally textured surfaces,” J. Appl. Phys. 62 (1987) 243-249.
 D. Zhiqiang, L. Meicheng, and T. M. Chonto, “Effective light absorption using the double-sided pyramid gratings for thin-film silicon solar cell,” Nanoscale Res. Lett. 13 (2018) 192.
 W.-C. Hsu, J. K. Tong, M. S. Branham, Y. Huang, S. Yerci, S. V. Boriskina, and G. Chen, “Mismatched front and back gratings for optimum light trapping in ultra-thin crystalline silicon solar cells,” Opt. Commun. 377 (2016) 52-58.
 K. X. Wang, Z. Yu, V. Liu, Y. Cui, and S. Fan, “Absorption enhancement in ultrathin crystalline silicon solar cells with antireflection and light-trapping nanocone gratings,” Nano Lett. 12 (2012) 1616-1619.
 I. Karakasoglu, K. X. Wang, and S. Fan, “Optical-electronic analysis of the intrinsic behaviors of nanostructured ultrathin crystalline silicon solar cells,” ACS Photonics 2 (2015) 883-889.
 W. Liu, S. Zhang, Y. Liu, X. Wang, and F. Yang, “Double sided nanopyramid arrays for broad spectrum absorption enhancement in ultrathin-film solar cells ” IEEE (2016) 2946–2948.
 Y. Huang, W. Wang, W. Pan, W. Chen, Z. Wang, X. Tan, and W. Yan, “Comparative investigation on designs of light absorption enhancement of ultrathin crystalline silicon for photovoltaic applications,” J. Photonics Energy 6 (2016) 047001.
 E. Yablonovitch, “Statistical ray optics,” J. Opt. Soc. Am. 72 (1982) 899.
 H.-C. Chang, C.-J. Huang, P.-T. Hsieh, W.-C. Mo, S.-H. Yu, and C.-C. Li, “Improvement on industrial n-type bifacial solar cell with >20.6% efficiency,” Energy Procedia 55 (2014) 643-648.
 F. Wang, S. Zhao, B. Liu, Y. Li, Q. Ren, R. Du, N. Wang, C. Wei, X. Chen, G. Wang, B. Yan, Y. Zhao, and X. Zhang, “Silicon solar cells with bifacial metal oxides carrier selective layers,” Nano Energy 39 (2017) 437-443.
 N. Zin, K. McIntosh, S. Bakhshi, A. Vázquez-Guardado, T. Kho, K. Fong, M. Stocks, E. Franklin, and A. Blakers, “Polyimide for silicon solar cells with double-sided textured pyramids,” Sol. Energy Mater Sol. Cells 183 (2018) 200-204.
 N. P. Dasgupta, S. Xu, H. J. Jung, A. Iancu, R. Fasching, R. Sinclair, and F. B. Prinz, “Nickel silicide nanowire arrays for anti-reflective electrodes in photovoltaics,” Adv. Funct. Mater. 22 (2012) 3650-3657.
 Z. Liu, H. Zhang, L. Wang, and D. Yang, “Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil,” Nanotechnology 19 (2008) 375602.
 H. C. Hsu, W. W. Wu, H. F. Hsu, and L. J. Chen, “Growth of high-density titanium silicide nanowires in a single direction on a silicon surface,” Nano Lett. 7 (2007) 885-889.
 S. Y. Chen and L. J. Chen, “Self-assembled epitaxial NiSi2 nanowires on Si(001) by reactive deposition epitaxy,” Thin Solid Films 508 (2006) 222-225.
 Y. Wu, J. Xiang, C. Yang, W. Lu, and C. M. Lieber, “Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures,” Nature 430 (2004) 61-65.
 C.-Y. Liu, W.-S. Li, L.-W. Chu, M.-Y. Lu, C.-J. Tsai, and L.-J. Chen, “An ordered Si nanowire with NiSi2 tip arrays as excellent field emitters,” Nanotechnology 22 (2011) 055603.
 S. Lee, J. Yoon, B. Koo, D. H. Shin, J. H. Koo, C. J. Lee, Y.-W. Kim, H. Kim, and T. Lee, “Formation of vertically aligned cobalt silicide nanowire arrays through a solid-state reaction,” IEEE Trans. Nanotechnol. 12 (2013) 704-711.
 C. Chuang and S. Cheng, “Fabrication and properties of well-ordered arrays of single-crystalline NiSi2 nanowires and epitaxial NiSi2/Si heterostructures,” Nano Res. 7 (2014) 1592-1603.
 S. Libertino, S. Coffa, J. L. Benton, K. Halliburton, and D. J. Eaglesham, “Formation, evolution and annihilation of interstitial clusters in ion implanted Si,” Nucl. Instrum. Methods Phys. Res 148 (1999) 247-251.
 M. Casalino, G. Coppola, M. Iodice, I. Rendina, and L. Sirleto, “Near-infrared sub-bandgap all-silicon photodetectors: state of the art and perspectives,” Sensors 10 (2010) 10571-10600.
 M. Casalino, G. Coppola, R. M. De La Rue, and D. F. Logan, “State-of-the-art all-silicon sub-bandgap photodetectors at telecom and datacom wavelengths,” Laser Photonics Rev. 10 (2016) 895-921.
 H. Y. Fan and A. K. Ramdas, “Infrared absorption and photoconductivity in irradiated silicon,” J. Appl. Phys. 30 (1959) 1127-1134.
 H. J. Stein, F. L. Vook, and J. A. Borders, “Direct evidence of divacancy formation in silicon by ion implantation,” Appl. Phys. Lett. 14 (1969) 328-330.
 G.-M. M., “Über Elementarakte mit zwei Quantensprüngen,” Ann. Phys. 9 (1931) 273–295.
 M. Casalino, “Near-infrared sub-bandgap all-silicon photodetectors: a review,” Int. J. Opt. Appl. 2 (2012) 1-16.
 J. F. Reintjes and J. C. McGroddy, “Indirect two-photon transitions in Si at 1.06 μm,” Phys. Rev. Lett. 30 (1973) 901-903.
 E. V. Stryland, H. Vanherzeele, M. Woodall, M. Soileau, A. Smirl, S. Guha, and T. Boggess, “Two photon absorption, nonlinear refraction, and optical limiting in semiconductors,” Opt. Eng. 24 (1985) 613-623.
 H. K. Tsang, C. S. Wong, T. K. Liang, I. E. Day, S. W. Roberts, A. Harpin, J. Drake, and M. Asghari, “Optical dispersion, two-photon absorption and self-phase modulation in silicon waveguides at 1.5 μm wavelength,” Appl. Phys. Lett. 80 (2002) 416-418.
 A. Cowan, G. Rieger, and J. Young, “Nonlinear transmission of 1.5 µm pulses through single-mode silicon-on-insulator waveguide structures,” Opt. Express 12 (2004) 1611.
 A. D. Bristow, N. Rotenberg, and H. M. van Driel, “Two-photon absorption and Kerr coefficients of silicon for 850–2200nm,” Appl. Phys. Lett. 90 (2007) 191104.
 R. H. Fowler, “The analysis of photoelectric sensitivity curves for clean metals at various temperatures,” Phys. Rev. 38 (1931) 45-56.
 M. Casalino, “Internal photoemission theory: comments and theoretical limitations on the performance of near-infrared silicon schottky photodetectors,” IEEE J. Quantum Electron 52 (2016) 1-10.
 J. Cohen, J. Vilms, and R. J. Archer, “Investigation of semiconductor Schottky barriers for optical detection and cathodic emission,” Air Force Cambridge Research Labs (1968).
 C. Scales and P. Berini, “Thin-film Schottky barrier photodetector models,” IEEE J. Quantum Electron 46 (2010) 633-643.
 V. Vickers, “Model of Schottky barrier hot-electron-mode photodetection,” Appl. Opt. 10 (1971) 2190.
 A. Di Bartolomeo, “Graphene schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction,” Phys. Rep 606 (2016) 1-58.
 W. Schottky, “Halbleitertheorie der Sperrschicht,” Sci. Nat. 26 (1938) 843.
 N. F. Mott, “Note on the contact between a metal and an insulator or semi-conductor,” Math. Proc. Camb. Philos. Soc. 34 (1938) 568-572.
 J. Bardeen, “Surface states and rectification at a metal semi-conductor contact,” Phys. Rev. 71 (1947) 717-727.
 A. M. Cowley and S. M. Sze, “Surface states and barrier height of metal‐semiconductor systems,” J. Appl. Phys. 36 (1965) 3212-3220.
 C. Chen, B. Nechay, and B. Tsaur, “Ultraviolet, visible, and infrared response of PtSi Schottky-barrier detectors operated in the front-illuminated mode,” IEEE Trans. Electron Devices 38 (1991) 1094-1103.
 B. Aslan and R. Turan, “On the internal photoemission spectrum of PtSi/p-Si infrared detectors,” Infrared Phys. Technol 43 (2002) 85-90.
 H. Elabd, T. Villani, and W. Ko, “Palladium-silicide Schottky-barrier IR-CCD for SWIR applications at intermediate temperatures,” IEEE Electron Device Lett. 3 (1982) 89-90.
 R. McKee, “Enhanced quantum efficiency of Pd2Si Schottky infrared diodes on〈111〉Si,” IEEE Trans. Electron Devices 31 (1984) 968-970.
 B. Tsaur, M. Weeks, R. Trubiano, P. Pellegrini, and T. Yew, “IrSi Schottky-barrier infrared detectors with 10-μm cutoff wavelength,” IEEE Electron Device Lett. 9 (1988) 650-653.
 B. Tsaur, C. Chen, and B. Nechay, “IrSi Schottky-barrier infrared detectors with wavelength response beyond 12 μm,” IEEE Electron Device Lett. 11 (1990) 415-417.
 S. Zhu, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Near-infrared waveguide-based nickel silicide Schottky-barrier photodetector for optical communications,” Appl. Phys. Lett. 92 (2008) 081103.
 S. Zhu, G. Q. Lo, M. B. Yu, and D. L. Kwong, “Low-cost and high-gain silicide Schottky-barrier collector phototransistor integrated on Si waveguide for infrared detection,” Appl. Phys. Lett. 93 (2008) 071108.
 S. Zhu, G. Q. Lo, and D. L. Kwong, “Low-cost and high-speed SOI waveguide-based silicide Schottky-barrier MSM photodetectors for broadband optical communications,” IEEE Photon. Technol. Lett. 20 (2008) 1396-1398.
 X. Qiu, X. Yu, S. Yuan, Y. Gao, X. Liu, Y. Xu, and D. Yang, “Trap assisted bulk silicon photodetector with high photoconductive gain, low noise, and fast response by Ag hyperdoping,” Adv. Opt. Mater. 6 (2018) 1700638.
 M. Tanzid, A. Ahmadivand, R. Zhang, B. Cerjan, A. Sobhani, S. Yazdi, P. Nordlander, and N. J. Halas, “Combining plasmonic hot carrier generation with free carrier absorption for high-performance near-infrared silicon-based photodetection,” ACS Photonics 5 (2018) 3472-3477.
 Z. Yang, K. Du, H. Wang, F. Lu, Y. Pang, J. Wang, X. Gan, W. Zhang, T. Mei, and S. J. Chua, “Near-infrared photodetection with plasmon-induced hot electrons using silicon nanopillar array structure,” Nanotechnology 30 (2019) 075204.
 J. Duran and A. Sarangan, “Schottky-barrier photodiode internal quantum efficiency dependence on nickel silicide film thickness,” IEEE Photon. J. 11 (2019) 1-15.
 B. P. Azeredo, J. Sadhu, J. Ma, K. Jacobs, J. Kim, K. Lee, J. H. Eraker, X. Li, S. Sinha, N. Fang, P. Ferreira, and K. Hsu, “Silicon nanowires with controlled sidewall profile and roughness fabricated by thin-film dewetting and metal-assisted chemical etching,” Nanotechnology 24 (2013) 225305.
 F. Teng, N. Li, D. Xu, D. Xiao, X. Yang, and N. Lu, “Precise regulation of tilt angle of Si nanostructures via metal-assisted chemical etching,” Nanoscale 9 (2017) 449-453.
 Y. Xu, Y. Xuan, and X. Liu, “Design of nano/micro–structured surfaces for efficiently harvesting and managing full–spectrum solar energy,” Solar Energy 158 (2017) 504-510.
 A. Cassie and S. Baxter, “Wettability of porous surfaces,” J. Chem. Soc. Faraday Trans 40 (1994) 546.
 R. Wenzel, “Resistance of solid surfaces to wetting by water,” Ind. Eng. Chem. Res. 28 (1936) 988-994.
 J. W. Cleary, R. E. Peale, D. J. Shelton, G. D. Boreman, C. W. Smith, M. Ishigami, R. Soref, A. Drehman, and W. R. Buchwald, “IR permittivities for silicides and doped silicon,” J. Opt. Soc. Am. B 27 (2010) 730-734.
 J. Cleary, R. Peale, D. Shelton, G. Boreman, R. S. , and W. Buchwald, “Silicides for infrared surface plasmon resonance biosensors,” MRS Proceedings 1133 (2008).
 H. Norde, “A modified forward I‐V plot for Schottky diodes with high series resistance,” J. Appl. Phys. 50 (1979) 5052-5053.
 S. Gholami and M. Khakbaz, “Measurement of I-V characteristics of a PtSi/p-Si Schottky barrier diode at low temperatures,” Int. J. Electr. Comput. Energ. Electron. Commun. Eng. 5 (2011) 128.
 Y. Cao, J. Zhu, J. Xu, J. He, J. L. Sun, Y. Wang, and Z. Zhao, “Ultra-broadband photodetector for the visible to terahertz range by self-assembling reduced graphene oxide-silicon nanowire array heterojunctions,” Small 10 (2014) 2345-2351.
 P.-L. Ong, W. B. Euler, and I. A. Levitsky, “Carbon nanotube-Si diode as a detector of mid-infrared illumination,” Appl. Phys. Lett. 96 (2010) 033106.
 F. Cao, Q. Liao, K. Deng, L. Chen, L. Li, and Y. Zhang, “Novel perovskite/TiO2/Si trilayer heterojunctions for high-performance self-powered ultraviolet-visible-near infrared (UV-Vis-NIR) photodetectors,” Nano Res. 11 (2018) 1722-1730.
 M. Casalino, L. Sirleto, M. Iodice, N. Saffioti, M. Gioffrè, I. Rendina, and G. Coppola, “Cu/p-Si Schottky barrier-based near infrared photodetector integrated with a silicon-on-insulator waveguide,” Appl. Phys. Lett. 96 (2010) 241112.
 S. Li, N. G. Tarr, W. Ye, and P. Berini, “Pd Schottky barrier photodetector integrated with LOCOS-defined SOI waveguides,” IEEE (2015).
 M. Casalino, G. Coppola, M. Iodice, I. Rendina, and L. Sirleto, “Near-infrared all-silicon photodetectors,” Int. J. Photoenergy 2012 (2012) 1-6.
 M. Gioffre, G. Coppola, M. Iodice, and M. Casalino, “Integrable near-infrared photodetectors based on hybrid erbium/silicon junctions,” Sensors 18 (2018) 3755.
 F. Hu, X. Y. Dai, Z. Q. Zhou, X. Y. Kong, S. L. Sun, R. J. Zhang, S. Y. Wang, M. Lu, and J. Sun, “Black silicon Schottky photodetector in sub-bandgap near-infrared regime,” Opt. Express 27 (2019) 3161-3168.
 S. Zhu, H. S. Chu, G. Q. Lo, P. Bai, and D. L. Kwong, “Waveguide-integrated near-infrared detector with self-assembled metal silicide nanoparticles embedded in a silicon p-n junction,” Appl. Phys. Lett. 100 (2012) 061109.
 S. Roy, K. Midya, S. P. Duttagupta, and D. Ramakrishnan, “Nano-scale NiSi and n-type silicon based Schottky barrier diode as a near infra-red detector for room temperature operation,” J. Appl. Phys. 116 (2014) 124507.
 Y. T. Wu, C. W. Huang, C. H. Chiu, C. F. Chang, J. Y. Chen, T. Y. Lin, Y. T. Huang, K. C. Lu, P. H. Yeh, and W. W. Wu, “Nickel/platinum dual silicide axial nanowire heterostructures with excellent photosensor applications,” Nano Lett. 16 (2016) 1086-1091.