博碩士論文 106324008 詳細資訊




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姓名 曾郁珉(Yu-Min Tseng)  查詢紙本館藏   畢業系所 化學工程與材料工程學系
論文名稱 新穎濕式蝕刻法製備規則準直排列之矽單晶奈米管陣列結構及其特性研究
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摘要(中) 在本研究中,我們報導一種透過聚苯乙烯奈米球微影術結合金屬輔助催化蝕刻法的新穎製程,成功地在(001)矽單晶基材製備出大面積規則準直排列之矽晶奈米管陣列結構,並藉由調控聚苯乙烯奈米球之尺寸與濕式蝕刻時間可以分別控制矽單晶奈米管的內外徑以及長度。由SEM、TEM影像圖及相對應之電子選區繞射圖譜鑑定分析可得知所製備出之矽晶奈米管具有高度準直性且為單晶結構。在波長範圍400-1600 nm的光譜量測結果顯示,因矽晶奈米管可視為是由奈米柱與奈米洞共同組成之複合式奈米材料,相較於矽晶基材與矽晶奈米柱擁有更優異的光吸收能力,且透過金薄膜產生的表面電漿共振效應可大幅提升近紅外光波段的光吸收。此外,若奈米管之間排列較緊密,因靜電屏蔽效應而嚴重影響場發射性質,因此本實驗嘗試以相同製備手法製備出間距較大、不同尺寸之矽單晶奈米管陣列結構。由場發射性質量測結果顯示,小尺寸下的矽單晶奈米管具有管壁較薄,且相對各個奈米管的間距變大,可以發現其場增強因子從1830提升至2814,起始電場從4.3 V μm-1下降至2 V μm-1,大幅提升場發射的效應。
摘要(英) In this study, we demonstrate a novel approach combining the polystyrene nanosphere lithography and metal-assisted catalyzed etching process to successfully fabricate large-area, well-order arrays of vertically-aligned silicon nanotubes on (001)Si substrates. The inner/outer diameter and length of silicon nanotubes are modulated by controlling the size of the polystyrene nanospheres and the wet etching time. From SEM, TEM and SAED analysis indicated that silicon nanotubes are highly collimated and single crystalline. The Vis-NIR spectroscopic measurements revealed that the silicon nanotubes considered as a hole-in-rod structure exhibited excellent light absorption characteristics compared to silicon nanorods, and the surface plasma resonance effect generated by the gold films can greatly enhance the absorption of NIR light. In addition, if the nanotubes are crowded, the field emission properties are seriously affected by the screening effect. Therefore, this study attempts to fabricate silicon nanotube arrays with larger pitch and different size by the same method. From field emission measurement results show that the field enhancement factor of small-sized silicon nanotubes, owing to their thin wall, large pitch, can be found to increase from 1830 to 2814, and turn-on field was reduced from 4.3 V μm-1 to 2 V μm-1.
關鍵字(中) ★ 奈米球微影術
★ 矽奈米管
★ 光伏元件
★ 場發射電子元件
關鍵字(英)
論文目次 第一章 前言及文獻回顧 1
1-1 前言 1
1-2 一維矽晶奈米結構 2
1-2-1 矽晶奈米線之製備 2
1-2-2 矽晶奈米管之製備 3
1-3 一維矽晶奈米結構應用於光學性質之研究 5
1-3-1 矽晶奈米結構應用於可見光之吸收 5
1-3-2 矽晶奈米結構應用於近紅外光之吸收 6
1-4 水滴接觸角之相關理論 7
1-5 場發射電子元件 8
1-5-1 電子場發射相關理論 8
1-5-2 矽單晶奈米管應用於電子場發射之研究 9
1-6 研究動機及目標 10
第二章 實驗步驟及實驗設備 12
2-1 規則有序排列且準直之矽單晶奈米柱陣列結構 12
2-1-1 矽晶基材使用前處理 12
2-1-2 自組裝奈米球陣列模板製備 12
2-1-3 蒸鍍純金薄膜 13
2-1-4 金屬催化化學蝕刻製備矽單晶奈米柱陣列 13
2-2 規則有序排列且準直之矽單晶奈米管陣列結構 13
2-2-1 選擇性異向蝕刻純金薄膜 14
2-3 試片分析 14
2-3-1 掃描式電子顯微鏡 14
2-3-2 穿透式電子顯微鏡 14
2-3-3 原子力顯微鏡 15
2-3-4 影像式水滴接觸角量測儀 15
2-3-5 可見光-近紅外光光譜儀 16
2-3-6 真空電子場發射性質量測系統 16
第三章 結果與討論 17
3-1 單層自組裝奈米球模板陣列製備 17
3-2 金屬輔助催化蝕刻法製備矽單晶奈米柱陣列 17
3-3 奈米球微影術結合選擇性蝕刻製備圓盤狀金奈米點陣列 18
3-4 金屬輔助催化蝕刻法製備矽單晶奈米管陣列 20
3-5 水滴接觸角量測分析 21
3-5-1 矽單晶奈米柱陣列 21
3-5-2 矽單晶奈米管陣列 22
3-6 可見光-近紅外光光譜量測分析 22
3-6-1 矽單晶奈米柱陣列 23
3-6-2 矽單晶奈米管陣列 24
3-7 電子場發射性質量測及探討 26
第四章 結論及未來展望 31
參考文獻 33
表目錄 37
圖目錄 45
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指導教授 鄭紹良 審核日期 2019-8-19
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