| 摘要(英) |
Chemical vapor deposition is a common method in semiconductor thin film growth processes. The flatness is improved for 12-inch epitaxial wafers required for semiconductor processes below 10 nm. The key technologies are: 1. Ultra-uniform epitaxial film 2. The wafer substrate is matched with the shape of the epitaxial film. In this study, the multi-physics finite element analysis software (COMSOL Multiphysics) was used to establish the epitaxial process system. The thermal field, flow field and species transfer simulation were performed using the applied material Centura® atmospheric pressure epitaxy reaction chamber. The effects of different Accuset, Upper liner and low liner, and Upper dome on the growth rate of the film were compared.
When growing large-size tantalum epitaxial films, the size of the reaction chamber is too large and the geometry is too complicated, so it is not easy to achieve good uniformity of the film above the wafer. Therefore, this study first establishes a three-dimensional physical model, when hydrogen and trichlorosilane is introduced into the reaction chamber, trichlorosilane and hydrogen will react with temperature to produce a chemical surface adsorption reaction. When the process temperature is 1050℃ to 1150 °C, the different inlet flow ratio and the geometry of the gas mixing zone will affect the shape, film deposition rate and flatness of the bismuth epitaxial film. From the simulation results, it is found that the temperature field analysis removes the geometry of the gas mixing zone, helps the gas to enter the cavity, reduces the temperature gradient, makes the concentration of the mixed gas more uniform, and achieves a better uniformity of the film. From the quartz cover design, the height of the cavity and the radius of curvature also affect the Growth rate profile. The smaller the radius of curvature, the larger the cavity height, and the ratio of the intake flow rate, the better uniformity results.
Then, in the process parameters, the addition of the rotation condition can also achieve the effect of improving the uniformity. In the simulation results, the uniformity after the addition of the rotation speed is better than that when the rotation is not performed, and the increase of the rotation speed can also improve the uniformity. After the partition is removed, in addition to the advantage that the rotation can improve the uniformity, the phenomenon that the local growth rate is low can be effectively improved.
|
| 參考文獻 |
[1] K. F. Jensen and W. Kern, in the thin Film Processes II, Eds. J. L. Vossen and W.
Kern, Academic Press,New YorK ,1991.
[2] L. Eckertova and T. Ruzicka, Diagnostics and Applications of Thin Films, 1993.
[3] Eiike Janocha, Electronic Properties of ALD Zinc Oxide Interfaces and its
Implication for Chalcopyrite Absorber Materials, Helmholtz Centre
Berlin ,2011
[4] 田民波,”薄膜技術與薄膜材料”五南圖書出版公司,2012
[5] Wenski, S. (2019). US8372298B2 - Method for producing epitaxially coated silicon wafers - Google Patents.
[6] Habuka, H., Katayama, M., Shimada, M. and Okuyama, K. (1994). Numerical Evaluation of Silicon-Thin Film Growth from SiHCl3-H2Gas Mixture in a Horizontal Chemical Vapor Deposition Reactor. Japanese Journal of Applied Physics, 33(Part 1, No. 4A), pp.1977-1985.
[7] Habuka, H., Nagoya, T., Mayusumi, M., Katayama, M., Shimada, M. and Okuyama, K. (1996). Model on transport phenomena and epitaxial growth of silicon thin film in SiHCl3-H2 system under atmospheric pressure. Journal of Crystal Growth, 169(1), pp.61-72.
[8] Kommu, S., Wilson, G. and Khomami, B. (2000). “A Theoretical/Experimental Study of Silicon Epitaxy in Horizontal Single-Wafer Chemical Vapor Deposition Reactors. ” Journal of The Electrochemical Society, 147(4), p.1538.
[9] Segal, A., Galyukov, A., Kondratyev, A., Sid’ko, A., Karpov, S., Makarov, Y., Siebert, W. and Storck, P. (2001). Comparison of silicon epitaxial growth on the 200-mm and 300-mm wafers from trichlorosilane in Centura reactors. Microelectronic Engineering, 56(1-2), pp.93-98.
[10] Habuka, H. (2001). Flatness Deterioration of Silicon Epitaxial Film Formed Using Horizontal Single-Wafer Epitaxial Reactor. Japanese Journal of Applied Physics, 40(Part 1, No. 10), pp.6041-6044.
[11] Habuka, H., Fukaya, S., Sawada, A., Takeuchi, T. and Aihara, M. (2002). Flatness Deterioration of Silicon Epitaxial Film Formed in a Horizontal Single-Wafer Epitaxial Reactor II. Japanese Journal of Applied Physics, 41(Part 1, No. 9), pp.5692-5696.
[12] Habuka, H., Fukaya, S., Sawada, A., Takeuchi, T. and Aihara, M. (2004). Formation mechanism of local thickness profile of silicon epitaxial film. Journal of Crystal Growth, 266(1-3), pp.327-332.
[13] Jeon, S., Park, H., Oh, H. and Kim, W. (2016). Computational Modeling of a Chemical Vapor Deposition Reactor for Epitaxial Silicon Formation. Science of Advanced Materials, 8(3), pp.578-582.
|
[Endnote RIS 格式]
[相關文章]
[文章引用]
[完整記錄]
[館藏目錄]
至系統瀏覽論文 ( 永不開放)
plurk
funp
live
udn
HD
myshare
netvibes
friend
youpush
delicious
baidu
Google bookmarks
del.icio.us
hemidemi
facebook
twitter
google
reddit