在高溫操作下具有超高速表現的850nm 和940nm 波段之垂直共振腔面射型雷射

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鄭辰龍(Chen-Lung Cheng) 查詢紙本館藏

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在高溫操作下具有超高速表現的850nm 和940nm 波段之垂直共振腔面射型雷射
(Ultrafast 850nm and 940nm Vertical-Cavity Surface-Emitting Lasers under High-Temperature Operations)

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★ 具有超低耗能,傳輸資料量比值在850nm波段超高速(40 Gb/s)面射型雷射	★ 超高速(~300GHz)光偵測器的製造與其在毫米波生物晶片上的應用
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★ 應用於850到1550 nm波長光連結且具有高速,高效率和大面積的p-i-n光偵測器	★ 應用於中距離(2km)至短距離光連結知單模態、高速、高輸出光功率的850nm波段面射型雷射
★ 應用在光連接具有高可靠度高速(>25Gbit/sec) 850光波段的垂直共振腔雷射	★ 具有高可靠度/高功率輸出與直流到次兆赫茲 (≧300GHz)操作頻寬的超高速光偵測器和其覆晶式封裝設計與分析

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摘要(中)

在本論文當中會探討850nm 波段及940nm 波段的垂直共振腔面射型雷射(VCSEL)的元件設計。此次實驗中的940nm VCSEL 元件方面，實現了最快紀錄的O-E 3dB 頻寬，能夠在室溫及高溫85℃ 操作環境下出
40GHz/32GHz 的小訊號頻寬。同時我們也研究了3μm、6μm、8μm 三種不同的氧化孔徑下，在室溫的特性下也分別能達到：40GHz、38GHz、
33GHz 的小訊號頻寬。透過S11 S21 參數所建立的等效電路模型分析出不同尺寸氧化孔徑所展現出的本質頻寬，在3μm氧化孔徑的元件可以得到46.3GHz 的本質頻寬，這數字能夠非常接近我們所量測的3dB 頻寬(40GHz)，有效證明我們透過了鋅擴散及氧化掏離技術所製作出的元件能夠釋放出元件的本質頻寬。透過通訊設備的量測傳輸，可以實現在1 公尺距離下使用OM5 光纖實現常溫60Gbit/sec 無誤碼(BER<1 × 10−12) ，且可以在常溫及高溫85℃的操作環境下維持50Gbps(BER<1 × 10−7)的眼圖超過100 公尺傳輸品質維持不變。
850nm 波段方面，我們採用另一種消逝波(Anti waveguiding) VCSEL 的磊晶結構，透過這種特別的共振腔設計，使的元件在氧化區域的高階模態能夠有效抑制，進而有效提升垂直方向的光場強度，讓元件的模態能夠趨近單模。實驗結果3dB 頻響可以達到30GHz，且傳輸方面在常溫傳輸量可以達到60Gbps 的Back to back(B2B)傳輸。

摘要(英)

In this work, we demonstrate 940 nm VCSELs with state-of-the-art dynamic performance. Record-high O-E bandwidths can be achieved under RT (40 GHz) and 85℃ (32 GHz) operation. The maximum intrinsic -3dB E-O bandwidths of these devices are obtained through the use of device modeling techniques and can be as high as 46.3 GHz. This number is close to the measured -3dB E-O bandwidth
(40 GHz) and clearly indicates that the Zn-diffusion and oxide-relief techniques used in our VCSELs can effectively relax their RC-limited bandwidth. By using
such devices as transmitters, 60 Gbit/sec error-free (BER < 1×10-12) back to back(B2B)transmission and invariant 50 Gbps transmission performance from RT to 85℃ over 100 meter OM5 fibers can be achieved.
In the 850nm VCSEL case, we used advanced design concepts of the VCSELs,addressing both longitudinal and transverse optical modes. Applying an epitaxial structure having an anti–waveguiding cavity in the vertical direction leads to a strong suppression of parasitic in–plane optical modes, which supports a high modulation bandwidth. Using thin aperture layers located in the nodes of the longitudinal field of the lasing mode results in a strong suppression of high–order transverse modes and in single transverse mode lasing. We achieved the bandwidth reach to 30GHz, and B2B transmission at 60Gbps on room temperature.

關鍵字(中)

★ VCSEL
★ 超高速垂直共振腔面射型雷射
★ 高速垂直共振腔面射型雷射
★ 850nm垂直共振腔面射型雷射
★ 940nm垂直共振腔面射型雷射

關鍵字(英)

★ VCSEL
★ ultra high speed
★ 850nm
★ 940nm

論文目次

目錄
中文摘要 ………………………………………………………………………………… i
英文摘要 ………………………………………………………………………………… ii
誌謝 ……………………………………………………………………………………… iii
目錄 ……………………………………………………………………………………… iv
圖目錄 …………………………………………………………………………………… v
表目錄 …………………………………………………………………………………… vi
第一章序論.............................. 1
簡介 .................................... 1
SWDM .................................... 5
垂直共振腔面射型雷射簡介 ................. 8
面射型雷射的電流侷限.......................10
氧化層結構 .............................. 12
第二章實驗理論 ....................... ..15
2-1 940nm 波段 VCSEL 晶片磊晶結構 ....... 15
2-2 850nm 波段 VCSEL 晶片設計結構 ....... 19
2-3 VCSEL 濕氧化原理.................... 22
2-4 高速VCSEL 製作...................... 25
2-5 濕氧化系統 .........................29
2-6 IR CCD 系統 .......................31
第三章實驗 ............................32
3-1 鋅擴散 (Zn diffusion) ..............32
3-2 水氧氧化 ...........................35
3-3 製作電極(P_Metal 和N_Metal) ....... 39
3-4 Isolation and Passivation ........ 41
3-5 平坦化 .............................43
3-6 PAD 金屬 ...........................44
第四章量測結果與討論 ................... 45
4-1 量測系統介紹 ........................45
4-1-1 電流對電壓(I-V)的量測 .............45
4-1-2 光功率對電流之量測 ................46
4-1-3 頻寬(Bandwidth)之量測系統 ........ 46
4-1-4 頻譜(Spectrum)之量測系統 ......... 47
4-2 940nm 波段 VCSEL 量測 .............. 48
4-2-1 VCSEL 元件結構圖...................48
viii
4-2-2 電流對電壓(I-V)曲線及光功率對電流(L-I)曲線 ..... 49
4-2-3 Smith Chart 微波反射係數 S11 ................. 52
4-3 E-O 頻寬(Band width)及頻譜(Spectrum) ............53
4-4 本質頻寬 (Intrinsic Frequency Response) .........56
4-5 940nm VCSEL 傳輸量測結果 ....................... 59
4-6 850nm 波段 VCSEL 量測結果 ...................... 62
第五章結論與未來討論.................................65
Reference ......................................... 66

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850 nm VCSELs operating at bit rates up to 25 Gbit/s at 150°C,”Proc. SPIE, Vertic-Cavity Surface Emitting LaserXXII, pp.10552-24,Feb.,2018.
[52] Kai-Lun Chi, Zheng-Ting Xie, M. Agustin, J.-R. Kropp, N. N. Ledentsov, Kuo-Feng Tseng, Ling-Gang Yang, and Jin-Wei Shi, “Zn-Diffusion/Oxide-Relief 940 nm VCSELs with Excellent High-Temperature Performance for
50 Gbit/sec Transmission,” Proc. OFC 2018, San Diego, CA, USA, March,2018, pp. W1I.5.
[53] Chen-Lung Cheng, N. Ledentsov Jr., M. Agustin, J.-R. Kropp, N. N.Ledentsov, Z. Khan, and Jin-Wei Shi, “Ultra-Fast Zn-Diffusion/Oxide-Relief 940 nm VCSELs,” to be published in Proc. OFC 2019, San Diego, CA, USA,March, 2019, pp. W3A.2.
[54] Jia-Liang Yen, Xin-Nan Chen, Kai-Lun Chi, Jason Chen, and Jin-Wei Shi,“850 nm Vertical-Cavity Surface-Emitting LaserArrays with Enhanced High-Speed TransmissionPerformance Over a Standard Multimode Fiber,”
IEEE/OSA Journal of Lightwave Technology, vol. 35, pp. 3242-3249, Aug.,2017.
[55] Kai-Lun Chi, Jia-Liang Yen, Jhih-Min Wun, Jia-Wei Jiang, I-Cheng Lu,Jason Chen,Ying-Jay Yang, and Jin-Wei Shi, “Strong Wavelength Detuning of 850 nm Vertical-Cavity Surface-Emitting Lasers for High-Speed (>40
Gbit/s) and Low-Energy Consumption Operation” IEEE Journal of selected topics in quantum electrum electronics. vol.21.no.6 November /December 2015.

指導教授

許晉瑋(Jin-Wei Shi)

審核日期

2019-7-30

推文