|| T. Boles, “GaN-on-Silicon – Present Capabilities and Future Directions,” AIP Conference Proceedings, February 2018.|
 Efﬁcient Power Conversion, “Where is GaN Going?”.
 Kang Peng, Soheila Eskandari, and Enrico Santi, “Characterization and Modeling of a Gallium Nitride Power HEMT,” IEEE Transactions on Industry Applications, Vol. 52, No. 6, pp. 4965–4975, November/December 2016.
 L. Zheng, J. J. Tian, Z. Q. Weng, H. Hu, J. Wu, and W. F. Sun, “An improved convergent model for single-photon avalanche diodes,” IEEE Photonics Technology Letters, Vol. 29, No. 10, pp. 798–801, May, 2017
 H. Li, X. Zhao, W. Su, K. Sun, T. Q. Zheng, and X. You, “Nonsegmented PSpice Circuit Model of GaN HEMT With Simulation Convergence Consideration,” IEEE Transactions on Industrial Electronics, Vol. 64, No. 11, pp. 8992–8999, November 2017.
 S. L. Colino, and R. A. Beach, “Fundamentals of gallium nitride power transistors,” 2009. [Online].
 W. R. Curtice, “GaAs MESFET modeling and nonlinear CAD,” IEEE Transactions on Microwave Theory and Techniques, Vol. 36, No. 2, pp. 220–230, February 1988.
 A. Lidow, J. Strydom, M. de Rooij, and Y. Ma, “GaN Transistors for Efﬁcient Power Conversion.,” Efﬁcient Power Conversion Corporation, 2012
 K. Kawahara, S. Hino, K. Sadamatsu, Y. Nakao, Y. Yamashiro,Y. Yamamoto, T. Iwamatsu, S. Nakata, S. Tomohisa, and S. Yamakawa, “6.5 kV Schottky-barrier-diode-embedded SiC-MOSFET for compact full-unipolar module,” 29th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 41–44, May/Jun 2017.
 H. Ruthing, F. Hille, F. J. Niedernostheide, H.J. Schulze, and B. Brunner, “600 V reverse conducting (RC-)IGBT for drives applications in ultra-thin wafer technology,” in Proc. 19th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 89–92, May 2007.
 T. Morita, S. Ujita, H. Umeda, Y. Kinoshita, S. Tamura, Y. Anda, T. Ueda, and T. Tanaka, “GaN Gate Injection Transistor with Integrated Si Schottky Barrier Diode for Highly Efficient DC-DC Converters,” IEEE International Electron Devices Meeting (IEDM), pp. 7.2.1–7.2.4, December 2012.
 B. R. Park, J. G. Lee, and H. Y. Cha, “Normally-off AlGaN/GaN-on-Si power switching device with embedded Schottky barrier diode,” Applied Physics Express (APEX), vol. 6, no. 3, February 2013
 B. R. Park, J. Y. Lee, J. G. Lee, D. M. Lee, M. K. Kim, and H. Y. Cha, “Schottky barrier diode embedded AlGaN/GaN switching transistor,” Semiconductor Science and Technology, vol. 28, no. 12, Octorber 2013.
 R. Reiner, P. Waltereit, B. Weiss, M. Wespel, R. Quay, M. Schlechtweg, M. Mikulla and, O. Ambacher, “Integrated Reverse-Diodes for GaN-HEMT Structures,” 27th IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 45–48, May 2015.
 T. F. Wang, J. Ma, and E. Matioli, “1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes,” IEEE Electron Device Letters, Vol. 39, No. 7, pp. 1038–1041, July 2018.
 J. Lei, J. Wei, G. Tang, Q. Qian, Z. Zhang, M. Hua, Z. Zheng and K. J. Chen, “Reverse-Conducting Normally-OFF Double-Channel AlGaN/GaN Power Transistor With Interdigital Built-In Schottky Barrier Diode,” IEEE Transactions on Electron Device, Vol. 66, No. 5, pp. 2106–2112, May 2019.
 GaN systems, “GS66516T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet,” GS66516T datasheet.
 M. H. Broadmeadow, G. R. Walker, and G. F. Ledwich, “Automated power semiconductor switching performance feature extraction from experimental double-pulse waveform data,” Australasian Universities Power Engineering Conference (AUPEC), pp. 1-4, September/Octorber 2018.
 劉宇晨, “射月計畫會議紀錄,” August 2018.
 H. H Qin, Y. Zhang, D. Wang, D. F. Fu, and C. H. Zhao, “Evaluating self-commutated reverse conduction characterization of enhancement-mode GaN HEMT for application,” PCIM Asia 2017 : International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, pp. 68-73, June 2017.
 何偉誠, “新型加強型氮化鎵高電子遷移率電晶體之電性探討,” 碩士論文, June 2019.
 GaN systems, “Application Brief GaN Switching Loss Simulation using LTSpice,” May 2018.