參考文獻 |
[1] M. J. Schindler and A. Morris, "DC-40 GHz and 20-40 GHz MMIC SPDT switches," IEEE Transactions on Electron Devices, vol. 34, no. 12, pp. 2595-2602, 1987.
[2] D. C. W. Lo et al., "Novel monolithic multifunctional balanced switching low-noise amplifiers," IEEE Transactions on Microwave Theory and Techniques, vol. 42, no. 12, pp. 2629-2634, 1994.
[3] D. L. Ingram, K. Cha, K. Hubbard, and R. Lai, "Q-band high isolation GaAs HEMT switches," in GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996, 1996, pp. 289-292.
[4] H. Mizutani, N. Funabashi, M. Kuzuhara, and Y. Takayama, "Compact DC-60-GHz HJFET MMIC switches using ohmic electrode-sharing technology," IEEE Transactions on Microwave Theory and Techniques, vol. 46, no. 11, pp. 1597-1603, 1998.
[5] F. Steinhagen, H. Massler, W. H. Haydl, A. Hulsmann, and K. Kohler, "Coplanar W-Band SPDT and SPTT Resonated PIN Diode Switches," in 1999 29th European Microwave Conference, 1999, vol. 2, pp. 53-56.
[6] M. Hieda et al., "High-isolation series-shunt FET SPDT switch with a capacitor canceling FET parasitic inductance," IEEE Transactions on Microwave Theory and Techniques, vol. 49, no. 12, pp. 2453-2458, 2001.
[7] Z. Gu, D. Johnson, S. Belletete, and D. Fryklund, "Low insertion loss and high linearity PHEMT SPDT and SP3T switch ICs for WLAN 802.11 a/b/g applications," in 2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers, 2004, pp. 505-508.
[8] K. Lin, T. Wen-Hua, C. Ping-Yu, C. Hong-Yeh, W. Huei, and W. Ruey-Beei, "Millimeter-wave MMIC passive HEMT switches using traveling-wave concept," IEEE Transactions on Microwave Theory and Techniques, vol. 52, no. 8, pp. 1798-1808, 2004.
[9] Y. Mei-Chao, L. Ren-Chieh, T. Zuo-Min, and W. Huei, "A miniature low-insertion-loss, high-power CMOS SPDT switch using floating-body technique for 2.4- and 5.8-GHz applications," in 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers, 2005, pp. 451-454.
[10] L. Zhenbiao and O. K. K, "15-GHz fully integrated nMOS switches in a 0.13-/spl mu/m CMOS process," IEEE Journal of Solid-State Circuits, vol. 40, no. 11, pp. 2323-2328, 2005.
[11] Y. Mei-Chao, T. Zuo-Min, L. Ren-Chieh, K. Lin, C. Ying-Tang, and W. Huei, "Design and analysis for a miniature CMOS SPDT switch using body-floating technique to improve power performance," IEEE Transactions on Microwave Theory and Techniques, vol. 54, no. 1, pp. 31-39, 2006.
[12] C. Cheng, S. Lin, C. Wei, H. Chiu, and R. Yang, "A High Isolation 0.15μm Depletion-Mode pHEMT SPDT Switch Using Field-Plate Technology," in 2007 Asia-Pacific Microwave Conference, 2007, pp. 1-4.
[13] J. P. Comeau, J. D. Cressler, and M. Mitchell, "Design and Layout Techniques for the Optimization of nMOS SPDT Series-Shunt Switches in a 130nm SiGe BiCMOS Technology," in 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2007, pp. 457-460.
[14] W. L. Kuo, J. P. Comeau, J. M. Andrews, J. D. Cressler, and M. A. Mitchell, "Comparison of Shunt and Series/Shunt nMOS Single-Pole Double-Throw Switches for X-Band Phased Array T/R Modules," in 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2007, pp. 249-252.
[15] V. Alleva et al., "High Power Microstrip GaN-HEMT Switches for Microwave Applications," in 2008 European Microwave Integrated Circuit Conference, 2008, pp. 194-197.
[16] A. Bettidi et al., "High power GaN-HEMT microwave switches for X-Band and wideband applications," in 2008 IEEE Radio Frequency Integrated Circuits Symposium, 2008, pp. 329-332.
[17] J. Janssen et al., "X-Band GaN SPDT MMIC with over 25 Watt Linear Power Handling," in 2008 European Microwave Integrated Circuit Conference, 2008, pp. 190-193.
[18] J. P. B. Janssen, M. v. Heijningen, G. Provenzano, G. C. Visser, E. Morvan, and F. E. v. Vliet, "X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling," in 2008 IEEE Compound Semiconductor Integrated Circuits Symposium, 2008, pp. 1-4.
[19] B. Min and G. M. Rebeiz, "Ka-Band Low-Loss and High-Isolation Switch Design in 0.13μm CMOS," IEEE Transactions on Microwave Theory and Techniques, vol. 56, no. 6, pp. 1364-1371, 2008.
[20] T. K. Thrivikraman, W. L. Kuo, J. P. Comeau, and J. D. Cressler, "The Impact of Technology Node Scaling on nMOS SPDT RF Switches," in 2008 European Microwave Integrated Circuit Conference, 2008, pp. 374-377.
[21] P. Park, D. H. Shin, and C. P. Yue, "High-Linearity CMOS T/R Switch Design Above 20 GHz Using Asymmetrical Topology and AC-Floating Bias," IEEE Transactions on Microwave Theory and Techniques, vol. 57, no. 4, pp. 948-956, 2009.
[22] P. K. Saha, J. P. Comeau, W. L. Kuo, and J. D. Cressler, "A K-Band nMOS SPDT Switch and Phase Shifter Implemented in 130nm SiGe BiCMOS Technology," in 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2009, pp. 1-4.
[23] H. Chang and C. Chan, "A Low Loss High Isolation DC-60 GHz SPDT Traveling-Wave Switch With a Body Bias Technique in 90 nm CMOS Process," IEEE Microwave and Wireless Components Letters, vol. 20, no. 2, pp. 82-84, 2010.
[24] G. Chen et al., "Cold-mode characteristics of 90 nm CMOS device with negative body bias and highly linear millimeter-wave switch applications," in 2010 Asia-Pacific Microwave Conference, 2010, pp. 554-557.
[25] N. Billström, J. Nilsson, A. Tengs, and N. Rorsman, "High performance GaN front-end MMICs," in 2011 6th European Microwave Integrated Circuit Conference, 2011, pp. 348-351.
[26] M. Parlak and J. F. Buckwalter, "A 2.5-dB Insertion Loss, DC-60 GHz CMOS SPDT Switch in 45-nm SOI," in 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011, pp. 1-4.
[27] N. A. Shairi, B. H. Ahmad, M. Z. A. A. Aziz, and A. F. Osman, "SPDT switch with defected ground structure for time division duplex switching in wireless data communication system," in 2011 IEEE International RF & Microwave Conference, 2011, pp. 238-241.
[28] K. Hettak, T. Ross, N. Irfan, D. Gratton, M. C. E. Yagoub, and J. Wight, "High-power broadband GaN HEMT SPST/SPDT switches based on resonance inductors and shunt-stacked transistors," in 2012 7th European Microwave Integrated Circuit Conference, 2012, pp. 215-218.
[29] M. H. Misran, N. A. Shairi, G. H. The, and M. A. M. Said, "Design and performance analysis of single biasing based SPDT switch for wireless data communications," in 2012 IEEE Asia-Pacific Conference on Applied Electromagnetics (APACE), 2012, pp. 363-366.
[30] C. H. J. Poh, R. L. Schmid, J. D. Cressler, and J. Papapolymerou, "An X-band to Ka-band SPDT switch using 200 nm SiGe HBTs," in 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2012, pp. 183-186.
[31] D. Shin, D. Kang, and G. M. Rebeiz, "A 0.01–8-GHz (12.5 Gb/s) 4×4 CMOS Switch Matrix," IEEE Transactions on Microwave Theory and Techniques, vol. 60, no. 2, pp. 381-386, 2012.
[32] P. Song, R. L. Schmid, A. Ç. Ulusoy, and J. D. Cressler, "A high-power, low-loss W-band SPDT switch using SiGe PIN diodes," in 2014 IEEE Radio Frequency Integrated Circuits Symposium, 2014, pp. 195-198.
[33] S. Dey and S. K. Koul, "Reliability Analysis of Ku-Band 5-bit Phase Shifters Using MEMS SP4T and SPDT Switches," IEEE Transactions on Microwave Theory and Techniques, vol. 63, no. 12, pp. 3997-4012, 2015.
[34] B. Yu et al., "A DC-50 GHz SPDT switch with maximum insertion loss of 1.9 dB in a commercial 0.13-μm SOI technology," in 2015 International SoC Design Conference (ISOCC), 2015, pp. 197-198.
[35] X. Bi, M. A. Arasu, Y. Zhu, and M. Je, "A Low Switching-Loss W-Band Radiometer Utilizing a Single-Pole-Double-Throw Distributed Amplifier in 0.13μm SiGe BiCMOS," IEEE Transactions on Microwave Theory and Techniques, vol. 64, no. 1, pp. 226-238, 2016.
[36] N. Hansen, C. Rave, B. Rohrdantz, and A. F. Jacob, "A compensated dual-band SPDT switch for radar duplexers at S- and X-band," in 2016 46th European Microwave Conference (EuMC), 2016, pp. 699-702.
[37] H. Mizutani, R. Ishikawa, and K. Honjo, "InGaAs MMIC SPST Switch Based on HPF/LPF Switching Concept With Periodic Structure," IEEE Transactions on Microwave Theory and Techniques, vol. 64, no. 9, pp. 2863-2870, 2016.
[38] D. P. Nguyen, A. Pham, and F. Aryanfar, "A K-Band High Power and High Isolation Stacked-FET Single Pole Double Throw MMIC Switch Using Resonating Capacitor," IEEE Microwave and Wireless Components Letters, vol. 26, no. 9, pp. 696-698, 2016.
[39] G. Polli, M. Palomba, S. Colangeli, A. Salvucci, and E. Limiti, "Resistive bias network for optimized isolation in SPDT switches," in 2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON), 2016, pp. 1-4.
[40] A. Tang et al., "A W-Band 65nm CMOS/InP-hybrid radiometer & passive imager," in 2016 IEEE MTT-S International Microwave Symposium (IMS), 2016, pp. 1-3.
[41] L. Wenju, M. Kaixue, and M. Shouxian, "A Ku-band high-isolation SPDT switch in 0.35um SiGe BiCMOS technology," in 2016 International Symposium on Integrated Circuits (ISIC), 2016, pp. 1-4.
[42] H. Al-Rubaye and G. M. Rebeiz, "W -Band Direct-Modulation >20-Gb/s Transmit and Receive Building Blocks in 32-nm SOI CMOS," IEEE Journal of Solid-State Circuits, vol. 52, no. 9, pp. 2277-2291, 2017.
[43] W. Lai, C. Chou, S. Huang, T. Huang, and H. Chuang, "75–110-GHz W -band High-Linearity Traveling-Wave T/R Switch by Using Negative Gate/Body-Biasing in 90-nm CMOS," IEEE Microwave and Wireless Components Letters, vol. 27, no. 5, pp. 488-490, 2017.
[44] Z. Liang, C. Xu, D. Xianjin, and L. Xinxin, "Design of K/Ka-band passive HEMT SPDT switches with high isolation," in 2017 China Semiconductor Technology International Conference (CSTIC), 2017, pp. 1-3.
[45] R. Shu and Q. J. Gu, "A Transformer-Based V -Band SPDT Switch," IEEE Microwave and Wireless Components Letters, vol. 27, no. 3, pp. 278-280, 2017.
[46] R. Shu, J. Li, A. Tang, B. J. Drouin, and Q. J. Gu, "Coupling-Inductor-Based Hybrid mm-Wave CMOS SPST Switch," IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 64, no. 4, pp. 367-371, 2017.
[47] B. Yu et al., "Ultra-Wideband Low-Loss Switch Design in High-Resistivity Trap-Rich SOI With Enhanced Channel Mobility," IEEE Transactions on Microwave Theory and Techniques, vol. 65, no. 10, pp. 3937-3949, 2017.
[48] L. Zhao, W. Liang, J. Zhou, and X. Jiang, "Compact 35–70 GHz SPDT Switch With High Isolation for High Power Application," IEEE Microwave and Wireless Components Letters, vol. 27, no. 5, pp. 485-487, 2017.
[49] R. Akmal, M. S. Arif, M. Saqib, and S. A. Imran, "Design Considerations for GaN based X-Band, High Power and High Isolation SPDT T/R Switch," in 2018 IEEE MTT-S Latin America Microwave Conference (LAMC 2018), 2018, pp. 1-3.
[50] S. Jang, S. Kong, H. Lee, J. Park, K. Kim, and K. Lee, "28 GHz 1.8 dB Insertion Loss SPDT Switch with 24 dB Isolation in 65 nm CMOS," in 2018 48th European Microwave Conference (EuMC), 2018, pp. 835-838.
[51] F. Meng, K. Ma, K. S. Yeo, and S. Xu, "Monolithic Sub-Terahertz SPDT Switches With Low Insertion Loss and Enhanced Isolation," IEEE Transactions on Terahertz Science and Technology, vol. 8, no. 2, pp. 192-200, 2018.
[52] P. Zhou et al., "A W-Band Low Loss, High Power SPDT Switch Using Reverse Saturated 0.13μm SiGe HBTs," in 2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2018, pp. 1-3.
[53] K. Ma, Y. Wang, W. Li, and Y. Chen, "A Novel Compact Self-Packaged SPDT Switchable BPFs Based on SISL Platform," IEEE Transactions on Industrial Electronics, vol. 66, no. 9, pp. 7239-7249, 2019.
[54] Y. Ping-Chun, L. Wei-Cheng, and C. Hwann-Kaeo, "Compact 28-GHz subharmonically pumped resistive mixer MMIC using a lumped-element high-pass/band-pass balun," IEEE Microwave and Wireless Components Letters, vol. 15, no. 2, pp. 62-64, 2005.
[55] C. Yeh et al., "A 3.5 GHz antiparallel diode pair mixer in GaN-on-Si HEMT technology," in 2012 4th International High Speed Intelligent Communication Forum, 2012, pp. 1-4.
[56] O. Habibpour, J. Vukusic, and J. Stake, "A 30-GHz Integrated Subharmonic Mixer Based on a Multichannel Graphene FET," IEEE Transactions on Microwave Theory and Techniques, vol. 61, no. 2, pp. 841-847, 2013.
[57] R. Michaelsen, T. Johansen, K. Tamborg, and V. Zhurbenko, "A passive x-band double balanced mixer utilizing diode connected SiGe HBTs," in 2013 European Microwave Integrated Circuit Conference, 2013, pp. 188-191.
[58] T. T. Nguyen, K. Fujii, and A. Pham, "Highly Linear Distributed Mixer in 0.25-μm Enhancement-Mode GaAs pHEMT Technology," IEEE Microwave and Wireless Components Letters, vol. 27, no. 12, pp. 1116-1118, 2017.
[59] C. Lu, A. H. Pham, M. Shaw, and C. Saint, "Linearization of CMOS Broadband Power Amplifiers Through Combined Multigated Transistors and Capacitance Compensation," IEEE Transactions on Microwave Theory and Techniques, vol. 55, no. 11, pp. 2320-2328, 2007.
[60] P. Choi et al., "A 5.9-GHz Fully Integrated GaN Frontend Design With Physics-Based RF Compact Model," IEEE Transactions on Microwave Theory and Techniques, vol. 63, no. 4, pp. 1163-1173, 2015.
[61] P. Dennler, F. v. Raay, M. Seelmann-Eggebert, R. Quay, and O. Ambacher, "Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications," in 2011 IEEE MTT-S International Microwave Symposium, 2011, pp. 1-4.
[62] R. Santhakumar et al., "Two-Stage High-Gain High-Power Distributed Amplifier Using Dual-Gate GaN HEMTs," IEEE Transactions on Microwave Theory and Techniques, vol. 59, no. 8, pp. 2059-2063, 2011.
[63] D. Kim, D. Lee, S. Sim, L. Jeon, and S. Hong, "An X-Band Switchless Bidirectional GaN MMIC Amplifier for Phased Array Systems," IEEE Microwave and Wireless Components Letters, vol. 24, no. 12, pp. 878-880, 2014.
[64] A. Biondi, S. D. Angelo, F. Scappaviva, D. Resca, and V. A. Monaco, "Compact GaN MMIC T/R module front-end for X-band pulsed radar," in 2016 11th European Microwave Integrated Circuits Conference (EuMIC), 2016, pp. 297-300.
[65] M. v. Heijningen, J. A. Hoogland, A. P. d. Hek, and F. E. v. Vliet, "6–12 GHz double-balanced image-reject mixer MMIC in 0.25μm AlGaN/GaN technology," in 2014 9th European Microwave Integrated Circuit Conference, 2014, pp. 65-68.
[66] D. M. J. W. Pozar, "Microwave engineering," 2005.
[67] 徐冠忠, "應用於C/X頻段之互補式金氧半導體低功耗寬頻接收機前端電路暨X頻段氮化鎵發射機之研製," 碩士, 電機工程學系, 國立中央大學, 桃園縣, 2018.
[68] 傅奕文, "應用變壓器耦合與負偏壓技術於Ka頻段單刀雙擲開關器暨應用電容共振技術於X/Ka頻段III-V族開關器之研製," 碩士, 電機工程學系, 國立中央大學, 桃園縣, 2018.
[69] 詹凱鈞, "應用於C頻段之互補式金氧半導體低相位雜訊C類壓控振盪器暨變壓器耦合四相位壓控振盪器暨利用F類壓控振盪器於C頻段之整數型鎖相迴路暨X頻段III-V族高功率振盪器之研製," 碩士, 電機工程學系, 國立中央大學, 桃園縣, 2018.
[70] 賴畇茿, "應用於X/Ka頻段之互補式金氧半導體寬頻中性化功率放大器暨應用低阻抗二元功率結合技術與多蒂架構於X頻帶氮化鎵功率放大器之研製," 碩士, 電機工程學系, 國立中央大學, 桃園縣, 2018.
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