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CHAPTER 1
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1.7 J. Cheng, C. Xie, Y. Chen, X. Chen, M. Tang and S. Fu, "Comparison of Coherent and IMDD Transceivers for Intra Datacenter Optical Interconnects," 2019 Optical Fiber Communications Conference and Exhibition (OFC), 2019, pp. 1-3.
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1.27 Mohammad A. Saleh, Majeed M. Hayat, Paul P. Sotirelis, Archie L. Holmes, Joe C. Campbell, Bahaa E. A. Saleh and Malvin Carl Teich”Impact-Ionization and Noise Characteristics of Thin III–V Avalanche Photodiodes,” IEEE Transactions on Electron Devices, vol. 48, pp. 2722-2731, DEC 2001.
1.28 E. Ishimura, E. Yagyu, M. Nakaji, S. Ihara, K. Yoshiara, T. Aoyagi, Y. Tokuda, and T. Ishikawa, “Degradation Mode Analysis on Highly Reliable Guarding-Free Planar InAlAs Avalanche Photodiodes,” IEEE/OSA Journal of Lightwave Technology, vol. 25, pp. 3686-3693, Dec., 2007.
1.29 B. F. Levine, R. N. Sacks, J. Ko, M. Jazwiecki, J. A. Valdmanis, D. Gunther, and J. H. Meier, “A New Planar InGaAs-InAlAs Avalanche Photodiode,” IEEE Photon. Tech. Lett., vol. 15, pp. 1898-1900, Sep., 2006.
1.30 M. Nada, Y. Muramoto, H. Yokoyama, T. Ishibashi and H. Matsuzaki, "Triple-mesa Avalanche Photodiode With Inverted P-Down Structure for Reliability and Stability," in Journal of Lightwave Technology, vol. 32, no. 8, pp. 1543-1548, April15, 2014, doi: 10.1109/JLT.2014.2308512.
1.31 M. Nada, Y. Yamada and H. Matsuzaki, "Responsivity-Bandwidth Limit of Avalanche Photodiodes: Toward Future Ethernet Systems," IEEE J. of Sel. Topics in Quantum Electronics, vol. 24, no. 2, pp. 1-11, March-April 2018.
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1.33 Albis Optoelectronics AG, Moosstrasse 2a, 8803 Rueschlikon, Switzerland. (Product: APD20D1 on Submount).
1.34 J.-M. Wun, C.-H. Lai, N.-W. Chen, J. E. Bowers, and J.-W. Shi, “Flip-chip bonding packaged THz photodiode with broadband high-power performance,” IEEE Photon. Technol. Lett., vol. 26, no. 24, pp. 2462–2464, Dec. 2014.
CHAPTER 2
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2.4 K. Kato, “Ultrawide-band/high-frequency photodetectors,” IEEE Trans. Microwave Theory Tech. 47(7), 1265-1281 (1999).
2.5 J.-W. Shi, K.-L. Chi, C.-Y. Li, and J.-M. Wun,“Dynamic analysis of high-efficiency InP based photodiode for 40 Gbit/sec optical interconnect across a wide optical window (0.85 to 1.55 m),” IEEE/OSA Journal of Lightwave Technology, 33(4), 921-927 (2015).
2.6 J.-W. Shi, C.-Y. Li, K.-L. Chi, J.-M. Wun, Y.-M. Hsin, and S. D. Benjamin, “Large-area p-i-n photodiode with high-speed and high-efficiency across a wide optical operation window (0.85 to 1.55 μm),” IEEE J. of Sel. Topics in Quantum Electronics, 20(6), 3800807 (2014).
2.7 S. Demiguel, N. Li, X. Li, X. Zheng, J. Kim, J. C. Campbell, H. Lu, and A. Anselm, “Very high-responsivity evanescently coupled photodiodes integrating a short planar multimode waveguide for high-speed applications” IEEE Photon. Tech. Lett., 15(12), 1761-1763 (2003).
2.8 J.-W. Shi, C.-Y. Wu, Y.-S. Wu, P.-H. Chiu, and C.-C. Hong, “High-speed, high-responsivity, and high-power performance of near-ballistic uni-traveling-carrier photodiode at 1.55μm wavelength,” IEEE Photon. Technol. Lett., 17(9), 1929-1931 (2005).
2.9 X. Xie, Q. Zhou, E. Norberg, M. Jacob-Mitos, Y. Chen, Z. Yang, A. Ramaswamy, G. Fish, J. C. Campbell, and A. Beling, “High-power and high-speed heterogeneously integrated waveguide-coupled photodiodes on silicon-on-insulator,” IEEE/OSA Journal of Lightwave Technology, 34(1), 73-78 (2016).
2.10 Y. Muramoto, H. Fukano, and T. Furuta, “A polarization-independent refracting-facet uni-traveling-carrier photodiode with high efficiency and large bandwidth,” IEEE/OSA Journal of Lightwave Technology, 24(10), 3830-3834 (2006).
2.11 A. Joshi and S. Datta, “High-speed, large-area, p-i-n InGaAs photodiode linear array at 2-micron wavelength,” Proc. SPIE, Infrared Technology and Applications XXXVIII 8353, 83533D (2012).
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2.13 Sidhu, Rubin et al. “A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells.” IEEE Photonics Technology Letters 17 (2005): 2715-2717.
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2.15 J.-M. Wun, Y.-W. Wang, and J.-W. Shi, “Ultra-fast uni-traveling carrier photodiodes with GaAs0.5Sb0.5/In0.53Ga0.47As type-II hybrid absorbers for high-power operation at THz frequencies,” IEEE J. of Sel. Topics in Quantum Electronics, 24(2), 8500207 (2018).
2.16 Albis Optoelectronics AG, Moosstrasse 2a, 8803 Rueschlikon, Switzerland. (Product: PD40C1), http://www.albisopto.com/albis_product/pd40c1-56-gbaud-photodiode-with-enhanced-responsivity/
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2.18 A. Dyson, I. D. Henning, and M. J. Adams, “Comparison of type I and type II heterojunction unitravelling carrier photodiodes for terahertz generation,” IEEE J. Sel. Topics Quantum Electron., vol. 14, no. 2, pp. 277–283, Mar./Apr. 2008.
2.19 I. D. Henning, M. J. Adams, Y. Sun, D. G. Moodie, D. C. Rogers, P. J. Cannard, S. “Jeevan” Dosanjh, M. Skuse, and R. J. Firth, “Broadband antenna-integrated, edge-coupled photomixers for tuneable terahertz sources,” IEEE J. Quantum Electron., vol. 46, no. 10, pp. 1498–1505, Oct. 2010.
2.20 E. Rouvalis, C. C. Renaud, D. G. Moodie, M. J. Robertson, and A. J. Seeds, “Traveling-wave uni-traveling carrier photodiodes for continuous wave THz generation,” Opt. Exp., vol. 18, pp. 11105–11110, 2010.
2.21 E. Rouvalis, C. C. Renaud, D. G. Moodie, M. J. Robertson, and A. J. Seeds, “Continuous wave terahertz generation from ultra-fast InP-based photodiodes,” IEEE Trans. Microw. Theory Tech., vol. 60, no. 3, pp. 509– 517, Mar. 2012.
2.22 M. J. Fice, E. Rouvalis, L. Ponnampalam, C. C. Renaud, and A. J. Seeds, “Telecommunications technology-based terahertz sources,” Electron. Lett., vol. 460, pp. 28–31, 2010.
2.23 A. Beck, G. Ducournau, M. Zaknoune, E. Peytavit, T. Akalin, J. F. Lampin, F. Mollot, F. Hindle, C. Yangand, and G. Mouret, “High-efficiency unitravelling-carrier photomixer at 1.55 μm and spectroscopy application up to 1.4 THz,” Electron. Lett., vol. 44, no. 22, pp. 1320–1321, 2008.
2.24 J.-W. Shi, F.-M. Kuo, and M.-Z. Chou, “A linear cascade near-ballistic uni-traveling-carrier photodiodes with extremely high saturation-current bandwidth product (6825mA-GHz, 75mA/91GHz) under a 50Ω Load,” in Proc. Opt. Fiber Commun. Collocated Nat. Fiber Opt. Eng. Conf. , 2010, pp. 1–3.
2.25 A. Wakatsuki, T. Furuta, Y. Muramoto, T. Yoshimatsu, and H. Ito, “Highpower and broadband sub-terahertz wave generation using a j-band photomixer module with rectangular-waveguide output port,” in Proc. 33rd Int. Conf. Millimeter Terahertz Waves, Pasadena, CA, USA, Sep. 2008, pp. 1–2.
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CHAPTER 3
3.1 M. Nada, Y. Yamada, and H. Matsuzaki, “Responsivity-bandwidth limit of avalanche photodiodes: Toward further ethernet systems,” IEEE J. Sel. Topics Quantum Electron., vol. 24, no. 2, Mar./Apr. 2018, Art. no. 3800811.
3.2 Product: APD 16L on Submount, Albis Optoelectronics AG, Rueschlikon, Switzerland, 2014.
3.3 M. Huang et al., “Germanium on silicon avalanche photodiode,” IEEE J. Sel. Topics Quantum Electron., vol. 24, no. 2, Mar./Apr. 2018, Art. no. 3800911.
3.4 Kang, Y.; Liu, H.-D.; Morse, M.; Paniccia, M.J.; Zadka, M.; Litski, S.; Sarid, G.; Pauchard, A.; Kuo, Y.-H.; Chen, H.-W.; et al. Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product. Nat. Photonics 2009, 3, 59–63.
3.5 Campbell, J.C.; Demiguel, S.; Ma, F.; Beck, A.; Guo, X.; Wang, S.; Zheng, X.; Li, X.; Beck, J.D.; Kinch, M.A.; et al. Recent advances in avalanche photodiodes. IEEE J. Sel. Top. Quantum Electron. 2004, 10, 777–787.
3.6 Rouvie, A.; Carpentier, D.; Lagay, N.; Decobert, J.; Pommereau, F.; Achouche, M. High Gain×Bandwidth Product Over 140-GHz Planar Junction AlInAs Avalanche Photodiodes. IEEE Photon. Tech. Lett. 2008, 20, 455–457.
3.7 Nada, M.; Muramoto, Y.; Yokoyama, H.; Ishibashi, T.; Matsuzaki, H. Triple-mesa Avalanche Photodiode with Inverted P-Down Structure for Reliability and Stability. IEEE OSA J. Lightwave Tech. 2014, 32, 1543–1548.
3.8 Nada, M.; Yoshimatsu, T.; Muramoto, Y.; Yokoyama, H.; Matsuzaki, H. Design and Performance of High-Speed Avalanche Photodiodes for 100-Gb/s Systems and Beyond. IEEE OSA J. Lightwave Tech. 2015, 33, 984–990.
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3.10 M. Nada, T. Yoshimatsu, F. Nakajima, K. Sano and H. Matsuzaki, "A 42-GHz Bandwidth Avalanche Photodiodes Based on III-V Compounds for 106-Gbit/s PAM4 Applications," J. Lightwave Technol. vol. 37, no. 2, pp. 260-265, Jan., 2019.
3.11 C. Xie and J. Cheng, "Coherent Optics for Data Center Networks," 2020 IEEE Photonics Society Summer Topicals Meeting Series (SUM), Cabo San Lucas, Mexico, pp. 1-2, July, 2020.
3.12 J. Cheng, C. Xie, Y. Chen, X. Chen, M. Tang and S. Fu, “Comparison of Coherent and IMDD Transceivers for Intra Datacenter Optical Interconnects,” Optical Fiber Communications Conference and Exhibition (OFC’2019), San Diego, CA, USA, W1F.2, Mar., 2019.
3.13 B. F. Aull, E. K. Duerr, J. P. Frechette, K. A. McIntosh, D. R. Schuette, and R. D. Younger, “Large-Format Geiger-Mode Avalanche Photodiode Arrays and Readout Circuits,” IEEE J. of Sel. Topics in Quantum Electronics, vol. 24, no. 2, pp. 3800510, March/April, 2018.
3.14 C.V. Poulton, A. Yaacobi, D.B. Cole, M.J. Byrd, M. Raval, D. Vermeulen and M.R. Watts. "Coherent solid-state LIDAR with silicon photonic optical phased arrays," Opt. Lett., vol. 42, no. 20, pp. 4091-4094, Oct., 2017
3.15 P. J. M. Suni, J. E. Bowers, Larry Coldren, S. J. Ben Yoo “Photonic Integrated Circuits for Coherent Lidar,” 18th Coherent Laser Radar Conference (CLRC 2016), Boulder, Colorado, USA, pp. 1-6, June, 2016
3.16 S. Crouch, “Advantages of 3D Imaging Coherent Lidar for Autonomous Driving Applications,” 19th Coherent Laser Radar Conference (CLRC 2018), Okinawa, Japan, pp. 1-4, June, 2018.
3.17 P. Adany, C. Allen, and R. Hui, “Chirped Lidar Using Simplified Homodyne Detection,” J. Lightwave Technol. vol., 27, pp. 3351-3357, Aug., 2009.
3.18 M. Anagnosti, C. Caillaud, J.-F. Paret, F. Pommereau, G. Glastre, F. Blache, and M. Achouche, “Record Gain x Bandwidth (6.1 THz) Monolithically Integrated SOA-UTC Photoreceiver for 100-Gbit/s Applications,” J. Lightwave Technol. vol., 33, pp. 1186-1190, March, 2015.
3.19 Y.-T. Han, D.-H Lee, J.-U. Shin, S.-H. Park, S.-T. Kim, S.-M. Shin, H.-B. Kim, B. Yoon, Y. Baek, "A Compact 100G-ER4 ROSA Realized by Hybrid Integration of SOA and Lensed PIN-PDs for QSFP28 Transceivers," Optical Fiber Communications Conference and Exhibition (OFC’2019), San Diego, CA, USA, W3E.3, March, 2019.
3.20 J-S Choe, W- Han, D.J. Kim, J-H. Kim, C.J. Youn, D-Y. Kim, Y-H. Kwon, E-S Nam, "Optimization of spot-size converter for low polarization dependent loss of waveguide photodetector," Optics Express, vol. 21, no. 25, pp. 30175-30182, Dec., 2013.
3.21 J. Y. Huh, S-K. Kang, J. H. Lee, J. K. Lee, S. M. Kim, "Highly alignment tolerant and high-sensitivity 100Gb/s (4 × 25Gb/s) APD-ROSA with a thin-film filter-based de-multiplexer," Optics Express, vol. 24, no.24, pp. 27104-27114, Nov., 2016.
3.22 P. Runge, G. Zhou, T. Beckerwerth, F. Ganzer, S. Keyvaninia, S. Seifert, W. Ebert, S. Mutschall, A. Seeger, and M. Schell, "Waveguide Integrated Balanced Photodetectors for Coherent Receivers," IEEE J. of Sel. Topics in Quantum Electronics, vol. 24, no. 2, pp. 1-7, March-April, 2018.
3.23 Hao-Yi Zhao, Naseem, Andrew H. Jones, Rui-Lin Chao, Zohauddin Ahmad, Joe C. Campbell, and Jin-Wei Shi, "High-Speed Avalanche Photodiodes with Wide Dynamic Range Performance," J. Lightwave Technol., vol. 37, no. 23, pp. 5945-5952, 1 Dec., 2019.
3.24 B. F. Levine, R. N. Sacks, J. Ko, M. Jazwiecki, J. A. Valdmanis, D. Gunther, and J. H. Meier, “A New Planar InGaAs-InAlAs Avalanche Photodiode,” IEEE Photon. Tech. Lett., vol. 15, pp. 1898-1900, Sep., 2006.
3.25 Y. L. Goh, J. S. Ng, C. H. Tan, W. K. Ng, and J. P. R. David, “Excess noise measurement in In0.53Ga0.47As,” IEEE Photon. Technol. Lett., vol. 17, no. 11, pp. 2412–2414, Nov., 2005.
3.26 B. J. Isaac, B. Song, S. Pinna, L. A. Coldren, and J. Klamkin, “Indium phosphide photonic integrated circuit transceiver for FMCW LiDAR,” IEEE J. Sel. Topics Quantum Electron., vol. 25, no. 6, Nov./Dec. 2019, Art. no. 8000107.
3.27 N. Satyan, A. Vasilyev, G. Rakuljic, V. Leyva, and A. Yariv, “Precise control of broadband frequency chirps using optoelectronic feedback,” Opt. Exp., vol. 17, no. 18, pp. 15991–15999, Aug. 2009.
3.28 T. Hariyama, P. A. M. Sandborn, M. Watanabe, and M. C. Wu, “Highaccuracy range-sensing system based on FMCWusing low-cost VCSEL,” Opt. Exp., vol. 26, no. 7, pp. 9285–9297, Apr. 2018.
3.29 X. Zhang, J. Pouls, and M. Wu, “Laser frequency sweep linearization by iterative learning pre-distortion for FMCW LiDAR,” Opt. Exp., vol. 27, no. 7, pp. 9965–9974, Apr. 2019.
3.30 J.-W. Shi et al., “Photonic generation and wireless transmission of linearly/ nonlinearly continuously tunable chirped millimeter-wave waveforms with high time-bandwidth product at W-band,” IEEE Photon. J., vol. 4, no. 1, pp. 215–223, Feb. 2012.
3.31 J.-M.Wun et al., “Photonic chirped radio-frequency generator with ultrafast sweeping rate and ultra-wide sweeping range,” Opt. Exp., vol. 21, no. 9, pp. 11475–11481, May 2013.
3.32 O. C. Graydon, M. N. Zervas, and R. I. Laming, “Erbium-doped-fiber optical limiting amplifiers,” J. Lightw. Technol., vol. 13, no. 5, pp. 732–739, May 1995.
3.33 M.S. Park and J.H. Jang, “GaAs0.5Sb0.5 lattice matched to InP for 1.55 μm photo-detection,” Electron. Letters, vol. 44, No. 8, pp. 549-551, April, 2008.
3.34 G. S. Kinsey, J. C. Campbell, and A. G. Dentai, “Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz,” IEEE Photonics Tech. Lett., vol. 13, pp. 842–844, Aug. 2001.
3.35 K. Kato, “Ultrawide-Band/High-Frequency Photodetectors,” IEEE Trans. Microwave Theory Tech., vol. 47, pp. 1265-1281, Jul., 1999.
3.36 Naseem, Z. Ahmad, R.-L. Chao, H.-S. Chang, C.-J. Ni, H.-S. Chen, J. J-.S. Huang, E. Chou, Y.-H. Jan, and J.-W. Shi, “The enhancement in speed and responsivity of uni-traveling carrier photodiodes with GaAs0.5Sb0.5/In0.53Ga0.47As type-II hybrid absorbers,” Optics Express, vol. 27, no. 11, pp. 15495-15504, May, 2019.
3.37 Y.-S. Wu; J.-W. Shi; P.-H. Chiu, “Analytical Modeling of a High Performance Near-Ballistic Uni-Traveling-Carrier Photodiode at a 1.55 μm Wavelength,” IEEE Photon. Technol. Lett., vol. 18, no. 8, pp. 938–940.April, 2006.
3.38 F.-M. Kuo, J.-W. Shi, H.-C. Chiang, H.-P. Chuang, H.-K. Chiou, C.-L. Pan, N.-W. Chen, H.-J. Tsai, and C.-B. Huang, “Spectral Power Enhancement in a 100-GHz Photonic Millimeter-Wave Generator Enabled by Spectral Line-by-Line Pulse Shaping,” IEEE Photonics Journal, vol. 2, no. 5, pp. 719-727, Oct., 2010.
3.39 A. Hirata, M. Harada and T. Nagatsuma, "120-GHz wireless link using photonic techniques for generation, modulation, and emission of millimeter-wave signals," J. Lightwave Technol., vol. 21, no. 10, pp. 2145-2153, Oct., 2003.
3.40 D. Tulchinsky, J. Boos, D. Park, P. Goetz, W. Rabinovich, and K. Williams, "High-Current Photodetectors as Efficient, Linear, and High-Power RF Output Stages," J. Lightwave Technol., vol. 26, no. 4, pp. 408-416. Feb., 2008.
CHAPTER 4
4.1 R.B. Emmons, “Avalanche-Photodiode Frequency Response,” Journal of Applied Physics, 38, 3705–3714, 1967.
4.2 J. Cheng, C. Xie, Y. Chen, X. Chen, M. Tang and S. Fu, “Comparison of Coherent and IMDD Transceivers for Intra Datacenter Optical Interconnects,” Optical Fiber Communications Conference and Exhibition (OFC’2019), San Diego, CA, USA, Mar. 2019, W1F.2. M.
4.3 Anagnosti, C. Caillaud, J.-F. Paret, F. Pommereau, G. Glastre, F. Blache, and M. Achouche, “Record Gain x Bandwidth (6.1 THz) Monolithically Integrated SOA-UTC Photoreceiver for 100-Gbit/s Applications,” J. Lightwave Technol. vol., 33, no. 6, pp. 1186-1190, March 2015.
4.4 Zohauddin Ahmad, Sheng-I Kuo, You-Chia Chang, Rui-Lin Chao, Naseem, Yi-Shan Lee, Yung-Jr Hung, Huang-Ming Chen, Jyehong Chen, Chee Seong Goh, and Jin-Wei Shi "Avalanche Photodiodes with Dual Multiplication Layers and Ultra-High Responsivity-Bandwidth Products for FMCW Lidar System Applications," IEEE Journal of Selected Topics in Quantum Electronics, vol. 28, no. 2, pp. 1-9, March-April 2022, Art no. 3800709, doi: 10.1109/JSTQE.2021.3062637.
4.5 P. Runge, G. Zhou, T. Beckerwerth, F. Ganzer, S. Keyvaninia, S. Seifert, W. Ebert, S. Mutschall, A. Seeger, and M. Schell, "Waveguide Integrated Balanced Photodetectors for Coherent Receivers," IEEE J. of Sel. Topics in Quantum Electronics, vol. 24, no. 2, pp. 1-7, March-April 2018.
4.6 Naseem, Zohauddin Ahmad, Yan-Min Liao, Po-Shun Wang, Sean Yang, Sheng-Yun Wang, Hsiang-Szu Chang, H.-S. Chen, Jack Jia-Sheng Huang, Emin Chou, Yu-Heng Jan, and Jin-Wei Shi, “Avalanche Photodiodes with Composite Charge-Layers for Low Dark Current, High-Speed, and High-Power Performance,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 28, no. 2, pp. 1-10, March-April 2022, Art no. 3801910, doi: 10.1109/JSTQE.2021.3111895.
4.7 M. Nada, Y. Yamada, and H. Matsuzaki, “A High-Linearity Avalanche Photodiodes with a Dual-Carrier Injection Structure,” IEEE Photon. Technol. Lett, vol. 29, no. 21, pp. 1828-1831, Nov., 2017.
4.8 J. Wei, F. Xia and S. R. Forrest, "A high-responsivity high-bandwidth asymmetric twin-waveguide coupled InGaAs-InP-InAlAs avalanche photodiode," in IEEE Photonics Technology Letters, vol. 14, no. 11, pp. 1590-1592, Nov. 2002, doi: 10.1109/LPT.2002.803894.
4.9 B. Wang, Z. Huang, Y. Yuan, D. Liang, X. Zeng, M. Fiorentino, and R. G. Beausoleil, "64 Gb/s low-voltage waveguide SiGe avalanche photodiodes with distributed Bragg reflectors," Photonics Research, vol. 8, no. 7, pp. 1118-1123, July 2020.
4.10 T. Okimoto, K. Ashizawa, H. Mori, K. Ebihara, K. Yamazaki, S. Okamoto, K. Horino, Y. Ohkura, H. Yagi, M. Ekawa and Y. Yoneda, "106-Gb/s Waveguide AlInAs/GaInAs Avalanche Photodiode with Butt-joint Coupling Structure," 2022 Optical Fiber Communications Conference and Exhibition (OFC), 2022, pp. 01-03.
4.11 T. Beckerwerth, R. Behrends, F. Ganzer, P. Runge and M. Schell, "Linearity Characteristics of Avalanche Photodiodes For InP Based PICs," in IEEE Journal of Selected Topics in Quantum Electronics, vol. 28, no. 2, pp. 1-8, March-April 2022, Art no. 3803408, doi: 10.1109/JSTQE.2021.3127853.
4.12 J-S Choe, W- Han, D.J. Kim, J-H. Kim, C.J. Youn, D-Y. Kim, Y-H. Kwon, E-S Nam, "Optimization of spot-size converter for low polarization dependent loss of waveguide photodetector," Optics Express, vol. 21, no. 25, pp. 30175-30182, Dec., 2013.
4.13 J. Y. Huh, S-K. Kang, J. H. Lee, J. K. Lee, S. M. Kim, "Highly alignment tolerant and high-sensitivity 100Gb/s (4 × 25Gb/s) APD-ROSA with a thin-film filter-based de-multiplexer," Optics Express, vol. 24, no.24, pp. 27104-27114, Nov., 2016.
4.14 Albis Optoelectronics AG, Moosstrasse 2a, 8803 Rueschlikon, Switzerland. (Product: APD20D1 on Submount)
4.15 J.-M. Wun, C.-H. Lai, N.-W. Chen, J. E. Bowers and J.-W. Shi “Flip-Chip Bonding Packaged THz Photodiode With Broadband High-Power Performance,” IEEE Photon. Technol. Lett., vol. 26, no. 24, pp. 2462-2464, Dec., 2014.
4.16 Naseem, Z. Ahmad, Y.-M. Liao, R.-L. Chao, P.-S. Wang, Y.-S. Lee, S. Yang, S.-Y. Wang, H.-S. Chang, H.-S. Chen, J. J.-S. Huang, E. Chou, Y.-H. Jan and J.-W. Shi, “Avalanche Photodiodes with Dual Multiplication Layers for High-Speed and Wide Dynamic Range Performances,” Photonics, vol. 8, no. 4, p. 98, Mar. 2021.
4.17 S. Wang et al., "Low-noise avalanche photodiodes with graded impact-ionization-engineered multiplication region," in IEEE Photonics Technology Letters, vol. 13, no. 12, pp. 1346-1348, Dec. 2001, doi: 10.1109/68.969903.
4.18 Ning Duan et al., "High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region," in IEEE Photonics Technology Letters, vol. 17, no. 8, pp. 1719-1721, Aug. 2005, doi: 10.1109/LPT.2005.851903.
4.19 N. Li, R. Sidhu, X. Li, F. Ma, S. Demiguel, X. Zhen, A. L. Holmes, Jr., J. C. Campbell, D. A. Tulchinsky, and K. J. Williams, “High-saturation-current InGaAs/InAlAs charge-compensated uni-traveling-carrier photodiode,” phys. stat. sol. (a), vol. 201, no. 13, pp. 3037-3041, Aug., 2004.
4.20 M. Nada, Y. Yamada and H. Matsuzaki, "Responsivity-Bandwidth Limit of Avalanche Photodiodes: Toward Future Ethernet Systems," IEEE J. of Sel. Topics in Quantum Electronics, vol. 24, no. 2, pp. 1-11, March-April 2018.
4.21 Y. L. Goh, J. S. Ng, C. H. Tan, W. K. Ng, and J. P. R. David, “Excess noise measurement in In0.53Ga0.47As,” IEEE Photon. Technol. Lett., vol. 17, no. 11, pp. 2412–2414, Nov., 2005.
4.22 B. Shi, F. Qi, P. Cai, X. Chen, Z. He, Y. Duan, G. Hou, T. Su, S. Li, W. Chen, C. Hong, R.-Chen Yu and D. Pan., "106 Gb/s Normal-Incidence Ge/Si Avalanche Photodiode with High Sensitivity," 2020 Optical Fiber Communications Conference and Exhibition (OFC), 2020, pp. 1-3.
4.23 M. Nada, F. Nakajima, T. Yoshimatsu, Y. Nakanishi, A. Kanda, T. Shindo, S. Tatsumi, H. Matsuzaki and K. Sano, "Inverted p-down Design for High-Speed Photodetectors," Photonics 2021, 8, no. 2, 39. https://doi.org/10.3390/photonics8020039.
4.24 Naseem, Z. Ahmad, R.-L. Chao, H.-S. Chang, C.-J. Ni, H.-S. Chen, J. J.-S. Huang, E. Chou, Y.-H. Jan and J.-W. Shi, “The enhancement in speed and responsivity of uni-traveling carrier photodiodes with GaAs0.5Sb0.5/In0.53Ga0.47As type-II hybrid absorbers,” Optics Express, vol. 27, no. 11, pp. 15495-15504, May, 2019.
4.25 M. Nada, T. Yoshimatsu, F. Nakajima, K. Sano and H. Matsuzaki, "A 42-GHz Bandwidth Avalanche Photodiodes Based on III-V Compounds for 106-Gbit/s PAM4 Applications," J. Lightwave Technol., vol. 37, no. 2, pp. 260-265, Jan. 2019.
4.26 E. Ishimura, E. Yagyu, M. Nakaji, S. Ihara, K. Yoshiara, T. Aoyagi, Y. Tokuda, and T. Ishikawa, “Degradation Mode Analysis on Highly Reliable Guarding-Free Planar InAlAs Avalanche Photodiodes,” IEEE/OSA Journal of Lightwave Technology, vol. 25, no. 12, pp. 3686-3693, Dec., 2007.
4.27 H.-Y. Zhao, Naseem, A. H. Jones, R.-L. Chao, Z. Ahmad, J. C. Campbell, and J.-W. Shi, "High-Speed Avalanche Photodiodes with Wide Dynamic Range Performance," Journal of Lightwave Technology, vol. 37, no. 23, pp. 5945-5952, 1 Dec., 2019.
4.28 G. S. Kinsey, J. C. Campbell, and A. G. Dentai, “Waveguide avalanche photodiode operating at 1.55 µm with a gain-bandwidth product of 320 GHz,” IEEE Photon. Tech. Lett., vol. 13, no. 8, pp. 842–844, Aug. 2001.
CHAPTER 5
5.1. S. Lee, X. Jin, H. Jung, H. Lewis, Y. Liu, B. Guo, S. H. Kodati, M. Schwartz, C. Grein, T. J. Ronningen, J. P. R. David, Joe. C. Campbell, and S. Krishna, "High gain, low noise 1550 nm GaAsSb/AlGaAsSb avalanche photodiodes," Optica 10, 147-154 (2023)
5.2. Y. Xiao, Z. Li, and Z. S. Li, “Modeling of InGaAs/AlGaAsSb APDs with high gain-bandwidth product,” Proc. SPIE 11498, 114980R (2020).
5.3. S. Xie, X. Zhou, S. Zhang, D. J. Thomson, X. Chen, G. T. Reed, J. S. Ng, and C. H. Tan, “InGaAs/AlGaAsSb avalanche photodiode with high gain bandwidth product,” Opt. Express 24, 24242–24247 (2016).
5.4. “Hamamatsu product datasheet: Si APD (S10341 series),” 2017, https://www.hamamatsu.com/resources/pdf/ssd/s10341_series_ kapd1030e.pdf. |