摘要(英) |
In this research, DC pulsed magnetron sputtering method has been applied to grow a single crystal germanium film on the silicon substrate. The energy bandgap of germanium is 0.66eV which is good for absorbing infrared light wavelength and becomes a popular material for photodetectors and solar cells. However, the cost of germanium is higher than silicon. One of the methods to reduce the cost is applied a germanium thin film on the silicon substrate to replace the germanium substrate.
Physical vapor deposition (PVD), the process without toxic and explosive gases, is safer than chemical vapor deposition (CVD). However, the physical lattice mismatch between silicon and germanium makes it difficult to improve the crystal quality and eliminate defects. The defects resulted in the dark current and the carrier recombination, pulsed DC is extended from the DC magnetron sputtering, DCMS, by providing 20V in few microseconds to eliminate the charge accumulation on target. In other word, it can improve the sputtering efficiency during process.
In this research, the high-power impulse magnetron sputtering (HiPIMS) is also applied to a DCMS system. To compare DCMS with HiPIMS, we can find that HiPIMS can ramp up power up to one or two order of magnitudes than DCMS, which can dissociate target material during sputtering. Moreover, a shorter on-time in the impulse means the lower temperature on the target.
In this experiment, the influences on the germanium films by adjusting the sputtering power, hydrogen flow rate, bias voltage, and changing the pulse time (on/off-time) and frequency have been analyzed. As a result, the good quality germanium film has been fabricated with the XRD FWHM 1990 arcsec, and also with only a little tensile stress successfully. |
參考文獻 |
[1] REN21 2019年最新再生能源全球狀況報告,取自 https://km.twenergy.org.tw/Data/db_more?id=3657
[2] D.M. Chapin, C. Fuller and G. Pearson, A new silicon p‐n junction photocell for converting solar radiation into electrical power. Journal of Applied Physics, 1954(25): p. 676-677.
[3] 太陽能電池wiki
https://zh.wikipedia.org/wiki/%E5%A4%AA%E9%98%B3%E8%83%BD%E7%94%B5%E6%B1%A0
[4] 非晶矽太陽能電池的優缺點https://kknews.cc/zh-tw/tech/9zrnx5.html
[5] Third-generation photovoltaics, matelialstoday, Volume 10, Issue 11, November 2007, Pages 42-50.
[6] 矽光子與光連結應用優勢探討https://www.ctimes.com.tw/DispArt/tw/%E5%8F%B0%E5%A4%A7%E7%B3%BB%E7%B5%B1%E6%99%B6%E7%89%87%E4%B8%AD%E5%BF%83%E5%B0%88%E6%AC%84/0909250922FJ.shtml
[7] GavinConibeer, “Third-generation photovoltaics ”, Materials Today Volume 10, Issue 11, November 2007, Pages 42-50
[8] 廖上瑩,「反應式直流脈衝磁控濺鍍法製備氮化鎵薄膜」,國立中央大學, 2019。
[9] 陳佳愔,「高功率脈衝磁控濺鍍遠紅外線抗反射膜之研究」, 國立中央大學, 2019。
[10] 劉佶隴,「射頻磁控濺鍍矽基鍺薄膜及光偵測器光電特性分析」,中央大學,2019。
[11] Rodrigo Perez Garcia, “Controlled Deposition of Fullerenes: Effects of Topological nano-Modifications of a Surface on Aggregation and Growth Phenomena”, University of Bristol, December 2018.
[12] Jugen Michel, et al, “High-Saturation-Power and High-Speed Ge-on-SOI p-i-n Photodetectors”, IEEE ELECTRON device letters, 31, 7, 701-703, 2010.
[13] 薄膜生長機制-wiki
https://zh.wikipedia.org/wiki/%E8%96%84%E8%86%9C%E7%94%9F%E9%95%BF%E6%A8%A1%E5%BC%8F
[14] 太陽能電池複合損失的種類
https://www.energytrend.com.tw/knowledge/20111213-2973.html
[15] Shaoying Ke, “Morphological evolution of self-assembled SiGe islands based on a mixed-phase pre-SiGe island layer grown by ion beam sputtering deposition”, Applied Surface Science Volume 328, 15 February 2015, Pages 387-394
[16] Nyles W. Cody, “Semiconductor buffer structures”, 2007, US 0264801 A1.
[17] J.M. Hartmann, A.M. Papon, V. Destefanis and T. Billon, Reduced pressure chemical vapor deposition of Ge thick layers on Si(001), Si(011) and Si(111). Journal of Crystal Growth, 2008. 310(24): p. 5287-5296.
[18] 陳旻毅,「高功率脈衝磁控濺鍍電源的瞬間功率對鍍膜結合力之影響」,逢甲大學出版,2016。
[19] Setsuo Nakao, “Semiconductor buffer structures ”, IEEE Transactions on plasma science, VOL. 41, NO. 8, AUGUST 2013.
[20] R. Ichikawa, “Germanium as a Material to Enable Silicon Photonics ”, Silicon Photonics II, 131-141, September 2010.
[21] 吳哲賢,「偏壓式磁控濺鍍法製作矽異質接面太陽能電池之研究」, 國立中央大學,2014。
[22] 周凌毅,「反應式濺鍍過渡態矽薄膜之研究」,國立中央大學,1999。
[23] X光繞射一百年 http://chiuphysics.cgu.edu.tw/yun-ju/CGUWeb/SciTheme/Bragg100/HomeBragg.htm
[24] Raman Spectrometer│拉曼光譜儀分析原理
https://www.rightek.com.tw/product_detail.php?id=186
[25] Edinburgh Instruments Blog What is Raman Spectroscopy?
https://www.edinst.com/blog/what-is-raman-spectroscopy/
[26] kctech 什麼是SEM?淺談掃描式電子顯微鏡技術
http://www.kctech.com.tw/zh/desktop-sem-what-is-sem
[27] Tirzah Abbott, SEM Match Maker Selecting the right SEM for imaging your samples, NUANCE.
[28] AZO Materials Different Types of SEM Imaging – BSE and Secondary Electron Imaging, Thermo Fisher Scientific Phenom-World BV, Aug 4 2017.
[29] 原子力顯微鏡基本原理
http://web1.knvs.tp.edu.tw/AFM/ch2.htm
[30] 原子力顯微鏡 wiki
https://zh.wikipedia.org/zh-tw/%E5%8E%9F%E5%AD%90%E5%8A%9B%E6%98%BE%E5%BE%AE%E9%95%9C
[31] 穿透電子顯微鏡-高瞻自然科學教學資源平台
https://highscope.ch.ntu.edu.tw/wordpress/?p=1599
[32] 毛亦群,「以濺鍍法製作p-type單晶鍺薄膜於太陽能電池應用」,國立中央大學,2015。
[33] Ziheng Liu, Low-temperature epitaxial growth of Ge on Si, towards a cost-effective substrate for III-V solar cells, World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC), 29 November 2018: 216-219.
[34] Douglas D. Cannon, Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications, Appl. Phys. Lett. 84, 906, 2004.
[35] N. Korivi. Low-temperature deposition of polycrystalline germanium on silicon by magnetron sputtering, Electronics Letters, Volume: 54, Issue: 17:1043-1045, 2018.
[36] Takeo Nakano, Effect of the target bias voltage during off-pulse period on the impulse magnetron sputtering, Vacuum 84(12):1368 |