參考文獻 |
[1]Available:https://www.chinatimes.com/newspapers/20200102000215-260202?chdtv
[2]Available:http://www.cena.com.cn/2018DIC/file/12.pdf
[3]Available:https://www.zhihu.com/question/22263252
[4]Available:http://newjust.masterlink.com.tw/HotProduct/HTML/Basic.xdjhtm?A=PA249-1.html
[5]T. Kamiya, K. Nomura, and H. Hosono, “Present status of amorphous In–Ga–Zn–O thin-film transistors”, Science and Technology of Advanced Materials, vol. 11, pp. 044305, 2010.
[6]Available:https://www.displaydaily.com/paid-news/ldm-mdm/technology/panel-makers-looking-at-ltps-oxide-hybrids
[7]Available:http://www.extremetech.com/computing/170970-igzo-display-tech-finally-makes-it-to-mass-market-ipad-air-now-high-res-laptops-and-desktops-next
[8]S. Yamazaki, J. Koyama, Y. Yamamoto, and K. Okamoto, “Research, Development, and Application of Crystalline Oxide Semiconductor” Society for Information Display Symposium Digest of Technical Papers, vol. 43, pp. 183-186, 2012.
[9]S. Yamazaki, “A possibility of crystalline indium-gallium-zinc-oxide to
very large scale integration”, ECS Transactions, vol. 54, pp. 85-96, 2013.
[10]楊明輝,「透明導電膜」,藝軒圖書出版社,2012。
[11]郭倩丞、李正中,「透明導電薄膜特性及光電元件應用」,中國工程,第84卷06期,68-78頁,民國100年12月。
[12]K. Nomura, H Ohta, K. Ueda, T. Kamiya, M. Orita, M. Hirano, T. Suzuki, C. Honjyo, Y. Ikuhara and H. Hosono “Growth of epitaxial ZnO thin films on lattice-matched buffer layer: Application of InGaO3(ZnO)6 single-crystalline thin film”, Thin Solid Films, vol. 486, pp. 28-32, 2005.
[13]K. Nomura, H Ohta, K. Ueda, T. Kamiya, M. Orita, M. Hirano, T. Suzuki, C. Honjyo, Y. Ikuhara and H. Hosono “Growth mechanism for single-crystalline thin film of InGaO3(ZnO)5 by reactive solid-phase epitaxy”, Journal of Applied Physics, vol. 95, pp. 5532-5539, 2004.
[14]Neil W. Ashcroft and N. David Mermin, Solid State Physics, Harcourt: Orlando, 1976, Chapter 4.
[15]Available:https://en.wikipedia.org/wiki/Zinc_oxide
[16]N. Kimizuka and T. Mohri, “Spinel, YbFe2O4, and Yb2Fe3O7 types of structures for compounds in the In2O3 and Sc2O3–A2O3–BO systems [A: Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn] at temperatures over 1000°C”, J. Solid State Chem, vol. 60, pp. 382-384, 1985.
[17]K. Nomura1, H. Ohta1, A. Takagi, T. Kamiya, M. Hirano1 and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors”, Nature, vol. 432, pp.488-492, 2004.
[18]H. Hosono, “How we made the IGZO transistor”, Nature Electronics, vol. 1, pp. 428, 2018.
[19]J. H. Ye, P. M. Chen, C. T. Peng, W. M. Huang, Y. A. Wu, “Development and characteristic analysis of crystalline IGZO”, Society for Information Display Symposium Digest of Technical Papers, vol. 47, pp. 1213-1216, 2016.
[20]T. Chen, M.-Y Wu, R. Ishihara, K. Nomura, T. Kamiya, H. Hosono and C.I. M Beenakker, “Excimer laser crystallization of InGaZnO4 on SiO2 substrate”, Journal of Materials Science, vol. 22, pp. 1694-1696, 2011.
[21]K. Ide, K. Nomura, H. Hiramatsu, T. Kamiya and H. Hosono, “Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O”, Journal of Applied Physics, vol. 111, pp.073513, 2012.
[22]M. Lee and J. Dho, “Controlling the Electrical and the Optical Properties of Amorphous IGZO Films Prepared by Using Pulsed Laser Deposition”, Journal of the Korean Physical Society, vol. 58, pp.492-497, 2011.
[23]S. Cho, M. Jeong, J. Kim, Y. Kwon, H. Kim, J. Lee, and H. Cho, “A combinatorial approach to solution-processed InGaO3(ZnO)m superlattice films: growth mechanisms and their thermoelectric properties”, CrystEngComm, vol. 18, pp. 807-815, 2016.
[24]D. Maurya, A. Sardarinejad and K. Alameh,”Recent Developments in R.F. Magnetron Sputtered Thin Films for pH Sensing Applications—An Overview”, Coatings, vol. 4, pp. 756-771, 2014.
[25]V. Kouznetsov, K. Macak, J. M. Schneider, U. Helmersson and I. Petrov, “A novel pulsed magnetron sputter technique utilizing very high target power densities”, Surface and Coatings Technology, vol. 122, pp. 290-293, 1999.
[26]A. Ehiasarian, W.-D. Münz, L. Hultman, U. Helmersson, and I. Petrov, “High power pulsed magnetron sputtered CrNx films”, Surface and coatings technology, vol. 163, pp. 267-272, 2003.
[27]J. A. Thornton, "Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings," Journal of Vacuum Science and Technology, vol. 11, pp. 666-670, 1974.
[28]A. Anders, "A structure zone diagram including plasma-based deposition and ion etching," Thin Solid Films, vol. 518, pp. 4087-4090, 2010.
[29]J. D. Verhoeven, “Fundamentals of Physical Metallurgy”, Wiley, New York, 1975, p. 326
[30]X. Su, L. Wang, Y. Lu, Y. Gan and R. Wang, “The effect of thermal annealing on (In2O3)0.75(Ga2O3)0.1(ZnO)0.15 thin films with high mobility”, Vacuum, vol. 107, pp. 191-194, 2014.
[31]G. Shanker, P. Prathap, K.M.K. Srivatsa and P. Singh, “Effect of balanced and unbalanced magnetron sputtering processes on the properties of SnO2 thin films”, Current Applied Physics, vol. 19, pp. 697-703, 2019.
[32]S. M. Rossnagel, J. J. Cuomo, and W. Westwood, Handbook of Plasma Processing Technology: Fundamentals, Etching, Deposition, and Surface Interactions, Materials Science and Process Technology, Berkshire, UK: Noyes: Noyes Publications, 1990.
[33] L. Shenchang Electric Co. (2018). SPIK2000A Tutorial PPST. Available: https://www.shenchang.com.tw/sara/SPIK2000A%20Tutorial%20PPST.pdf
[34]K. Sarakinos,J. Alami and S. Konstantinidis, “High power pulsed magnetron sputtering: A review on scientific and engineering state of the art”, Surface and Coatings Technology, vol. 204, pp. 1661-1684, 2010.
[35]Available:http://ezphysics.nchu.edu.tw/prophys/basicexp/expnote/hall/hall_97Feb.pdf
[36]林麗娟,「X光繞射原理及其應用」,工業材料,第86期,100-109頁,2000。
[37]Available:http://web1.knvs.tp.edu.tw/AFM/ch4.htm
[38]林昆霖,「肉眼看不見的奈米級材料及元件檢測分析就靠穿透式電子顯微鏡」,國家奈米元件實驗室奈米通訊,第20期,34-38頁,2013
[39]S. Honda, M. Watamori and K. Oura, “The effects of oxygen content on electrical and optical properties of indium tin oxide films fabricated by reactive sputtering”, Thin Solid Films, vol. 281-282, pp. 206-208, 1996.
[40]M. C. Martínez-Tomás, D. N. Montenegro, V. Sallet and V. Muñoz-Sanjosé, “High resolution x-ray diffraction methodology for the structural analysis of one-dimensional nanostructures”, Journal of Applied Physics, vol. 112, pp. 014305, 2012.
[41]陳尚青、許道生、吳威德,「實物現場 X-ray 殘留應力量測及其振 動應力消除技術」,儀科新知,第207期,民國105年6月。
[42]廖上瑩,「反應式直流脈衝磁控濺鍍法製備氮化鎵薄膜」,國立中央大學,碩士論文,民國108年
[43]吳哲賢,「偏壓式磁控濺鍍法製作矽異質接面太陽能電池之研究」,國立中央大學,碩士論文,民國103年
[44]劉佶隴,「射頻磁控濺鍍矽基鍺薄膜及光偵測器光電特性分析」,國立中央大學,碩士論文,民國108年
[45]N. Kimizuka and S. Yamazaki, “Physics and technology of crystalline oxide semiconductor CAAC-IGZO fundamentals”, Wiley, New York, 2016. |