高功率脈衝磁控濺鍍氧化銦鎵鋅

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姓名

呂元傑(Yuan-Chieh Lu) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

高功率脈衝磁控濺鍍氧化銦鎵鋅
(Fabrication of IGZO thin films using high power impulse magnetron sputtering)

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至系統瀏覽論文 (2025-7-29以後開放)

摘要(中)

現今的顯示器主要是由薄膜電晶體(thin film transistor，TFT)來驅動，而薄膜電晶體中的主動層(active layer)材料為顯示器特徵之關鍵，多數商用顯示器主要是使用非晶矽(a-Si)作為主動層，然而a-Si的載子遷移率不到1 cm2/Vs，低的載子遷移率造成低的顯示速度，a-Si已無法滿足高速顯示器的需求，其他材料如氧化銦鎵鋅(IGZO)的載子遷移率超過10 cm2/Vs以上，除了高載子遷移率之外還有均勻性佳、成本低…等優點，適合取代傳統非晶矽。
本研究使用高功率脈衝磁控濺鍍IGZO，利用高功率脈衝高電漿密度、高離化率、薄膜均勻性以及緻密度佳…等優點，成功地成長出高載子遷移率的IGZO薄膜，更一步藉由ZnO緩衝層以及退火製程成長出c軸取向結晶型IGZO(CAAC-IGZO)，CAAC-IGZO相較於a-IGZO有更低的漏電流以及更高的薄膜均勻性。

摘要(英)

Displays nowadays are mainly driven by thin film transistor(TFT). The active(channel) layer material in the TFT has become the key for the property of displays. Most of the commercial displays applied amorphous silicon(a-Si) as the active layer. However, the carrier mobility of a-Si is less than 1 cm2/Vs, which is too low for the high speed display. The carrier mobility of other materials such as amorphous indium gallium zinc oxide(a-IGZO) exceeds above 10 cm2/Vs. In addition to high carrier mobility, it has the advantages of good uniformity and low cost which are better than a-Si.
In this study, the high power impulse magnetron sputtering(HiPIMS) has been applied to deposit indium gallium zinc oxide. Utilizing its advantages of the high power impulse, the high plasma density, the high ionization rate, the good uniformity and density for thin film, a high carrier mobility IGZO film has been fabricated successfully. Besides, by using ZnO buffer layer and post annealing, the c-axis aligned crystalline IGZO(CAAC-IGZO) has been also fabricated with lower leakage current and higher film uniformity compared with a-IGZO.

關鍵字(中)

★ 高功率脈衝磁控濺鍍
★ 氧化銦鎵鋅
★ 緩衝層
★ 退火
★ CAAC-IGZO

關鍵字(英)

★ HiPIMS
★ IGZO
★ buffer layer
★ annealing
★ CAAC-IGZO

論文目次

目錄
摘要 i
Abstract ii
致謝 iii
圖目錄 vii
表目錄 x
第一章、緒論 1
1-1前言 1
1-2研究動機 3
第二章、文獻回顧與基本原理 6
2-1透明導電膜 6
2-2緩衝層以及ZnO材料特性 6
2-3 IGZO簡介 8
2-4濺鍍原理 12
2-5高功率脈衝磁控濺鍍 13
2-6退火 15
第三章、實驗架構、設備與量測儀器 16
3-1實驗架構 16
3-2實驗設備 20
3-2-1濺鍍系統 20
3-2-2 HiPIMS系統 21
3-2-3偏壓電源設備 23
3-2-4高溫退火爐管 24
3-3量測儀器 25
3-3-1光譜儀 25
3-3-2霍爾量測儀(Hall measurement) 26
3-3-3 X光繞射分析儀(X-ray diffraction，XRD) 28
3-3-4原子力顯微鏡(Atomic Force Microscope，AFM) 30
3-3-5高解析掃描穿透式電子顯微鏡(Transmission electron microscope，TEM) 30
第四章、結果與討論 32
4-1非晶型之IGZO薄膜 32
4-1-1濺鍍功率對IGZO薄膜性質的比較 32
4-1-2氧氣流量對IGZO薄膜性質的影響 36
4-1-3儲能時間對IGZO薄膜性質的影響 37
4-2結晶型之IGZO薄膜 39
4-2-1退火溫度對結晶性的影響 39
4-2-2氧氣流量對結晶性的影響 42
4-2-3儲能時間對結晶性的影響 44
4-2-4正偏壓對結晶性的影響 50
4-2-5負偏壓對結晶性的影響 54
第五章、結論 58
參考資料 60

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指導教授

陳昇暉(Sheng-Hui Chen)

審核日期

2020-7-29

推文