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姓名	顧鈞平(Chun-Ping Ku)  查詢紙本館藏	畢業系所	化學工程與材料工程學系
論文名稱	尖錐狀中空奈米結構陣列之製備及性質研究
相關論文	★ 規則氧化鋁模板及鎳金屬奈米線陣列製備之研究 ★ 電化學沉積法製備ZnO:Al奈米柱陣列結構及其性質研究 ★ 溼式蝕刻製程製備矽單晶奈米結構陣列及其性質研究 ★ 氣體電漿表面改質及濕式化學蝕刻法結合微奈米球微影術製備位置、尺寸可調控矽晶二維奈米結構陣列之研究 ★ 陽極氧化鋁模板法製備一維金屬與金屬氧化物奈米結構陣列及其性質研究 ★ 水熱法製備ZnO, AZO 奈米線陣列成長動力學以及性質研究 ★ 新穎太陽能電池基板表面粗糙化結構之研究 ★ 規則準直排列純鎳金屬矽化物奈米線、奈米管及異質結構陣列之製備與性質研究 ★ 鈷金屬與鈷金屬氧化物奈米結構製備及其性質研究 ★ 單晶矽碗狀結構及水熱法製備ZnO, AZO奈米線陣列成長動力學及其性質研究 ★ 準直尖針狀矽晶及矽化物奈米線陣列之製備及其性質研究 ★ 奈米尺度鎳金屬點陣與非晶矽基材之界面反應研究 ★ 在透明基材上製備抗反射陽極氧化鋁膜及利用陽極氧化鋁模板法製備雙晶銅奈米線之研究 ★ 準直矽化物奈米管陣列、超薄矽晶圓與矽單晶奈米線陣列轉附製程之研究 ★ 尖針狀矽晶奈米線陣列及凖直鐵矽化物奈米結構之製備與性質研究 ★ 金屬氧化物奈米結構製備及其表面親疏水性質之研究
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摘要(中)	在本研究中，我們報導在製備出一維奈米結構後，以濺鍍金屬鎳薄膜技術結合氫氟酸修飾與鹼性蝕刻之新穎製程，成功地在(001)矽單晶基材製備出大面積規則準直排列之錐狀鎳奈米管陣列結構，並藉由調控氫氟酸修飾次數與濕式蝕刻時間可以分別控制矽單晶奈米管的內外徑以及長度。此外，若奈米管之間排列較緊密，因靜電屏蔽效應而嚴重影響場發射性質，因此本實驗嘗試以相同製備手法製備出間距較大、不同尺寸之錐狀鎳奈米管陣列結構。由場發射性質量測結果顯示，在相同高度下，口徑小之錐狀鎳奈米管與口徑較大之鎳奈米管相比，可以發現其場增強因子從7784提升至8517，起始電場從0.83 V μm-1下降至0.77 V μm-1，大幅提升場發射的效應。 在高度方面隨著高度下降在口徑約相同之條件下，可以發現其場增強因子從8517降至4821，起始電場從0.77 V μm-1下降至0.99 V μm-1，因此可以判斷高度對於場發射來說影響重大。將上述製程結合熱退火處理，成功製備出錐狀鎳矽化物奈米管陣列結構。
摘要(英)	Abstract In this study, we reported the fabrication about one-dimensional nanostructure, a novel process successfully fabricates a large-area, well-ordered of tapered nickel nanotube structure on (001) silicon substrate, which combining hydrofluoric acid modification and alkaline etching process, and the internal diameter and length of nickel nanotubes can be controlled by hydrofluoric acid modification and the wet etching time. In addition, if the nanotubes are crowded, the field emission properties are seriously affected by the screening effect. Therefore, this study attempts to fabricate the tapered nickel nanotube arrays of different sizes with the same method. Field emission measurement’s result show that at the same height, the small diameter tapered nickel nanotube compared with larger one shows that the field enhancement factor has been increased from 7784 to 8517, and turn-on field was reduced from 0.83 Vμm. -1 dropped to 0.77 Vμm-1, significantly enhancing the effect of field emission. Under the condition that the aperture is the same, when the height decreased the field enhancement factor shifts from 8517 to 4821, and the initial incidence drops from 0.77 Vμm-1 to 0.99 Vμm-1. Combining the above process with thermal annealing treatment, also successfully fabricated a tapered nickel silicide nanotube arrays.
關鍵字(中)	★ 矽化物奈米管	關鍵字(英)	★ silicide nanotube
論文目次	目錄 第一章 前言及文獻回顧 1 1-1 前言 1 1-2電子場發射電極元件 3 1-2-1 電子場發射相關理論 3 1-2-2一維單晶矽奈米結構應用於電子場發射之研究 4 1-2-3 奈米管結構應用於電子場發射之研究 5 1-3一維金屬奈米線與奈米管之製備 6 1-4金屬矽化物 7 1-4-1 金屬矽化物之製程與應用 7 1-4-2薄膜鎳金屬矽化物 9 1-4-3鎳金屬矽化物奈米線 9 1-4-4鎳矽化物奈米線應用於電子場發射之研究 10 1-5 研究動機及目標 12 第二章 實驗步驟及實驗設備 13 2-1 規則有序排列且準直之矽單晶奈米柱陣列結構 13 2-1-1 矽晶基材使用前處理 13 2-1-2 自組裝奈米球陣列模板製備 13 2-1-3 蒸鍍純金薄膜 14 2-1-4 金屬輔助催化蝕刻法製備矽單晶奈米柱陣列 14 2-2 規則有序排列且準直之鎳矽化物奈米管陣列結構 14 2-2-1 鎳薄膜之濺鍍沉積 14 2-2-2氫氟酸破壞頂部純鎳薄膜 14 2-2-3 選擇性蝕刻中心柱狀矽 15 2-3 規則有序排列且準直之錐狀鎳奈米管陣列結構 15 2-4 規則有序排列且準直之鎳矽化物奈米管陣列結構 15 2-4-1 鎳矽核殼奈米錐結構高溫熱退火處理 15 2-4-2氫氟酸破壞頂部純鎳薄膜並選擇性蝕刻中心殘餘鎳 16 2-5 試片分析 16 2-3-1 掃描式電子顯微鏡 16 2-3-2 穿透式電子顯微鏡 17 2-3-3 影像式水滴接觸角量測儀 17 2-3-4真空電子場發射性質量測系統 18 第三章 結果與討論 19 3-1 大面積週期性排列之金屬鎳奈米管陣列 19 3-1-1 聚苯乙烯奈米球模板製備 19 3-1-2 製備矽單晶奈米柱陣列並濺鍍金屬鎳 21 3-1-3 氫氟酸修飾頂部鎳並結合鹼性蝕刻法 22 3-2 大面積週期性排列之矽單晶奈米錐陣列 22 3-3 大面積週期性排列之鎳矽殼核奈米錐陣列 24 3-4 氫氟酸修飾鎳矽殼核奈米錐頂部 25 3-5 鹼性蝕刻法蝕刻頂部裸露之中心矽 27 3-6 電子場發射性質量測及探討 29 3-7 尖錐狀鎳矽化物奈米管陣列結構 31 第四章 結論及未來展望 34 參考文獻 36 表目錄 49 圖目錄 51
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指導教授	鄭紹良(Shao-Liang Cheng)	審核日期	2020-8-19
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