在砷化銦鎵 /砷化鋁銦單光子崩潰二極體中崩潰閃光引致光學串擾之探討

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姓名

陳雅寧(Ya-Ning Chen) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

在砷化銦鎵 /砷化鋁銦單光子崩潰二極體中崩潰閃光引致光學串擾之探討
(Breakdown Flash Induced Optical Crosstalk Issue in InGaAs/InAlAs Single Photon Avalanche Diode)

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摘要(中)

近年來近紅外光單光子崩潰二極體(Single Photon Avalanche Diode, SPAD) 被廣為研究，其應用相當廣泛，可用於光纖通訊為基礎的量子通訊及量子電腦、電子產業的VLSI電路或是車用電子偵測系統等。其原理為將元件操作於崩潰電壓以上，光子被吸收後產生載子，並於高電場下獲取能量觸發衝擊游離，因此具有相當高的增益，遂可用來偵測極低強度的光。
將SPAD元件製作成多像素陣列，可提高偵測器動態偵測範圍(dynamic range)或實現成像相關之應用；為了提高偵測效率，陣列設計會盡可能縮小SPAD元件間的間距來提升密度，減少光子損失。當元件崩潰時所產生的光學串擾，會因為間距的微縮而影響相鄰元件的偵測，導致其他元件發生非預期之崩潰，而影響偵測的準確性。
在本論文中，我們量測出InGaAs/InAlAs APD所產生的Breakdown flash波長，並使用光學模擬軟體Rsoft的FullWAVE功能，用計算共振腔品質因子的方法延伸應用至模擬SPAD陣列中光學串擾現象，模擬陣列中breakdown flash傳遞至相鄰元件的能量密度，藉由此方法來比較不同陣列結構設計下，光學串擾對相鄰元件之影響是否如預期趨勢相同，並印證此模擬方法可用於模擬SPAD陣列光學串擾現象，我們亦進一步分析何種設計可以有效降低光學串擾。

摘要(英)

In recent years, near infrared single photon avalanche diodes (SPAD) have many applications in various fields including optical fiber-based quantum communications and quantum computers, VLSI circuits in the electronics industry, or automotive electronic detection systems. A SPAD is reversely biased above the breakdown voltage and the absorption of single photon can trigger impact ionization process, resulting infinite number of carriers to detect faint light.
SPADs are made into a multi-pixel array to improve the detector dynamic range or enable imaging applications. To improve the detection efficiency, the distance between SPAD pixels should be minimized in order to increase the pixel density and hence reduce the photon loss. When the distance between each pixel is reduced, the breakdown flash generated by the avalanche carriers may travel to the nearby SPADs in the array, inducing unwanted avalanche events that would deteriorate the detection ability.
In this paper, we pay great effort to measure the emission spectrum of breakdown flash produced by InGaAs/InAlAs SPAD, and further substitute the emission spectrum into the simulation tool of FullWAVE in Rsoft to study the issue of optical crosstalk in the SPAD array by applying the method similar to the calculation of the decay of resonance mode in cavity. Based on the above method, we can calculate the energy density of breakdown flash propagation. The optical crosstalk can be well predicted under different conditions. We also further discuss the effectiveness of several designs that can help to reduce the optical crosstalk.

關鍵字(中)

★ 單光子雪崩二極體
★ 光學串擾
★ 砷化銦鎵 /砷化鋁銦
★ 崩潰閃光

關鍵字(英)

★ SPAD
★ Optical Crosstalk
★ breakdown flash
★ InGaAs/InAlAs

論文目次

摘要 ii
Abstract iii
致謝 iv
目錄 v
圖目錄 vii
表目錄 x
一、緒論 1
1-1 前言 1
1-1-1 光電倍增管 3
1-1-2 光崩潰二極體 5
1-1-3 偵測波段與材料 7
1-1-4 單光子元件陣列與光學串擾之影響 8
1-2 研究動機與論文架構 13
二、單光子雪崩二極體 14
2-1 元件物理 14
2-2 崩潰機制 16
2-3 Breakdown flash物理特性 18
三、量測系統架構與結果 22
3-1 光路量測架構 22
3-2 Breakdown flash影像 25
3-3 Breakdown flash波長 28
四、結構設計與模擬 31
4-1 Rsoft模擬軟體介紹 31
4-1-1 能量密度模擬方法 32
4-2 元件結構設計 36
4-3 模擬 42
4-3-1 DBR對數 42
4-3-2 光波長共振 47
4-3-3 改變陣列設計條件 52
五、模擬結果分析與討論 56
六、結論與未來展望 66
參考文獻 67

參考文獻

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指導教授

李依珊(Yi-Shan Lee)

審核日期

2020-8-10

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