摘要(英) |
In this thesis, we discuss the matrix coefficient verification method to help develop programs for semiconductor device simulation. In the past, we often faced program non-convergence or had wrong results. We feel helpless and it is difficult to solve. Therefore, the matrix coefficient verification method can verify the coefficient values of simultaneous equations step by step, and ensure that errors can be caught. In order to increase the flexibility of the two-dimensional analysis, we use the triangle grid module to verify the coefficient values in the first triangle grid and check whether the theoretical value and the simulated value are consistent to achieve the verification. Finally, the triangular grid is applied to other semiconductor devices, such as resistors, PN diodes, BJT, etc., and simulate their characteristic curves. |
參考文獻 |
[1] Y. M. Li, “Research on Development of Computer Simulation Methods for Semiconductor
Devices and Nanostructures,” D. S. Thesis, Institute of Electronics, National Chiao Tung
University, Taiwan, Republic of China, 2000.
[2] R. A. Jabr, M. Hamad, Y. M. Mohanna, “Newton-Raphson Solution of Poisson’s Equation
in a PN Diode,” Int. J. Electrical Eng. Educ., Jan. 2007.
[3] M. S. Li, “Rectangular Transform of Trapezoidal Mesh and Its Application to Cylindrical
MOSFETs,” M. S. Thesis, Institute of EE, Nation Central University, Taiwan, Republic of
China, 2011.
[4] M. Bern, D. Eppstein, and J. Gilbert, “Provably good mesh generation,” J. Compute.
System Sci., pp. 384–409, 1994
[5] S. S. Kuo, “Computer applications of numerical methods” Additions-Wesley Pub.Co.
1972.
[6] D. M. Bressoud, “Appendix to A Radical Approcch to Real Analysis,” 2nd edition,2006
[7] Robert L. Boylestad, Louis Nashelsky, “Electronic Devices and Circuit Theory,”Chapter
2, Prentice Hall, 9 edition, 2005
[8] H. J. Kai,“ Finding the internal vector fromthe plane equation in obtuse triangle element
for 2D semiconductor device simulation,” M. S. Thesis, Institute of EE, National Central
University, Taiwan, Republic of China, pp. 7-10, 2016.
[9] W. T. Shen” Finding internal vector from the edge vector in obtuse triangle element for 2D
semiconductor device simulation,” M. S. Thesis, Institute of EE, National Central
University, Taiwan, Republic of China, pp. 5-8, 2016.
[10] D. A. Neamen, Semiconductor Physics and Devices, 3rd ed. McGraw-Hill Companies Inc.,
New York, 2003. |