參考文獻 |
[1] O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J.
Schaff, and L. F. Eastman, “Two-dimensional electron gases induced by spontaneous and
piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures”J. Appl.
Phys., vol. 85, no. 6, pp. 3222-3233, Mar. 1999.
[2] L. F. Eastman and U. K. Mishra, “The toughest transistor yet [GaN transistors],”
IEEE Spectrum, vol. 39, no. 5, pp. 28-33, May 2002.
[3] Jungwan Cho, Daniel Francis, David H. Altman, Mehdi Asheghi, and Kenneth E.
Goodson, “Phonon conduction in GaN-diamond composite substrates,”J. Appl. Phys., vol.
121, no. 5, Feb. 2017
[4] 高仲山, “以氫化物氣相磊晶技術在獨立式氮化鎵基板上再成長氮化鎵厚膜”
碩士論文, 國立交通大學, 民國98 年。
[5] Kyu-Won Jang, In-Tae Hwang, Hyun-Jung Kim, Sang-Heung Lee, Jong-Won Lim
and Hyun-Seok Kim, “Thermal Analysis and Operational Characteristics of an
AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A
Simulation Study,” Micromachines, vol. 11, no. 53, Dec. 2019
[6] Ya-Hsi Hwang, Tsung-Sheng Kang, Fan Rena and Stephen J. Pearton, “Novel
approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors
with a Cu filled via under device active area,” J. Vac. Sci. Technol. B, vol. 32, no. 6,
Nov./Dec. 2014
[7] M. Mußer, F. van Raay, P. Br¨uckner, W. Bronner, R. Quay, M. Mikulla and O.
Ambacher, “Individual Source Vias for GaN HEMT Power Bars,” Proc. Eur. Microw. Int.
Circuits Conf., pp. 184-187,Oct. 2013
54
[8] D. Y. C. Lie , J. C.Mayeda and J. Lopez, “Highly Efficient 5G Linear Power
Amplifiers (PA) Design Challenges,” 2017 International Symposium on VLSI Design,
Automation and Test (VLSI-DAT), Apr. 2017
[9] Qorvo QPA3503 Datasheet, 3 W, 28 V, 3.4 – 3.6 GHz GaN PA Module, Online:
https://www.qorvo.com/products/p/QPA3503
[10] CREE CMPA2060025D Datasheet, 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power
Amplifier, Online: https://www.wolfspeed.com/media/downloads/303/CMPA2060025DRev2_
0.pdf
[11] Juyeon Lee, Seunghoon Jee, Bonghyuk Park, Cheol Ho Kim and Bumman Kim,
“GaN MMIC Broadband Saturated Power Amplifier,” 2013 Asia-Pacific Microwave
Conference Proceedings (APMC), pp. 606-608, Nov. 2013
[12] Sih-Han Li, Shawn S. H. Hsu , Jie Zhang and Keh-Ching Huang, “Design of a
Compact GaN MMIC Doherty Power Amplifier and System Level Analysis With XParameters
for 5G Communications,” IEEE Trans. Microw. Theory Techn., vol. 66, no. 12,
pp. 5676-5684, Dec. 2018
[13] Andres Seidel, Jens Wagner and Frank Ellinger, “3.6 GHz Asymmetric Doherty PA
MMIC in 250 nm GaN for 5G Applications,” 2020 German Microwave Conference
(GeMiC), pp. 1-4, Mar. 2020
[14] GaN25 Technology Introduction, WIN Semiconductors Corp., Aug. 2017
[15] Eric J. Wyers, T. Robert Harris, W. Shep Pitts, Jordan E. Massad, and Paul D. Franzon,
“Characterization of the Mechanical Stress Impact on Device Electrical Performance in
the CMOS and III-V HEMT/HBT Heterogeneous Integration Environment,” 2015
International 3D Systems Integration Conference (3DIC), Aug./Sep 2015
[16] Masahiro Hikita, Manabu Yanagihara, Kazushi Nakazawa, Hiroaki Ueno, Yutaka
Hirose, Tetsuzo Ueda, Yasuhiro Uemoto, Tsuyoshi Tanaka, Daisuke Ueda and Takashi
55
Egawa, “AlGaN/GaN Power HFET on Silicon Substrate With Source-Via Grounding
(SVG) Structure,” IEEE Trans. Electron Devices, pp. 1963-1968, vol. 52, no. 9, Sept. 2005
[17] Aleš Chvála, Daniel Donoval, Alexander Šatka, Marián Molnár, Juraj Marek and
Patrik Príbytný, “Advanced Methodology for Fast 3-D TCAD Device/Circuit
Electrothermal Simulation and Analysis of Power HEMTs,” IEEE Trans. Electron Devices,
pp. 828-834, vol. 62, no. 3, Mar. 2015
[18] M. Meneghini, D. Bisi, D. Marcon, S. Stoffels, M. Van Hove, T.-L. Wu, S. Decoutere,
“Trapping in GaN-based metal-insulatorsemiconductor transistors: Role of high drain bias
and hot electrons,” Appl. Phys. Lett., pp. 1-4, vol. 104, issue 14, Mar. 2014
[19] Chuan Zhang, Maojun Wang, Bing Xie, Cheng P. Wen, Jinyan Wang, Yilong Hao,
Wengang Wu, Kevin J. Chen and Bo Shen, “Temperature Dependence of the Surface- and
Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors on Si
Substrate,” IEEE Trans. Electron Devices, pp. 2475-2480, vol. 62, no. 8, Aug. 2015
[20] J. Nilsson, N. Billstrom, N. Rorsman, and P. Romanini, “S-Band discrete and MMIC
GaN power amplifiers,” Proc. Eur. Microw. Int. Circuits Conf., pp. 495–498, Sep. 2009.
[21] E. M. Suijker, M. Sudow, M. Fagerlind, N. Rorsman, A. P. de Hek, and F. E. van Vliet,
“GaN MMIC power amplifiers for S-band and X-band,” Proc. Eur. Microw. Conf., pp.
297–300, Oct. 2008.
[22] M. A. Gonzalez-Garrido, J. Grajal, P. Cubilla, A. Cetronio, C. Lanzieri, and M. Uren,
“2-6 GHz GaN MMIC power amplifiers for electronic warfare applications,” Proc. Eur.
Microw. Int. Circuits Conf., pp. 83–86, Oct. 2008.
[23] Hwiseob Lee, Wonseob Lim, Jongseok Bae, Wooseok Lee, Hyunuk Kang,Keum
Cheol Hwang, Kang-Yoon Lee,Cheon-Seok Park, and Youngoo Yang,“Highly Efficient
Fully Integrated GaN-HEMTDoherty Power Amplifier Based on Compact Load Network,”
IEEE Trans. Microw. Theory Tech., pp. 5203-5211, vol. 65, no. 12, Dec. 2017
56
[24] Dan Kuylenstierna, Sten E. Gunnarsson, and Herbert Zirath, “Lumped-Element
Quadrature Power Splitters Using Mixed Right/Left-Handed Transmission Lines,” IEEE
Trans. Microw. Theory Tech., pp. 2616-2621, vol. 53, no. 8, Aug. 2005
[25] Daehyun Kang, Dongsu Kim, Yunsung Cho, Byungjoon Park, Jooseung Kim, and
Bumman Kim, “Design of Bandwidth-Enhanced Doherty Power Amplifiers for Handset
Applications,” IEEE Trans. Microw. Theory Tech., pp. 3474-3483,vol. 59, no. 12, Dec.
2011
[26] Guansheng Lv, Wenhua Chen, Xin Liu, Fadhel M. Ghannouchi, and Zhenghe Feng,
“A Fully Integrated C-band GaN MMIC Doherty Power Amplifier With High Efficiency
and Compact Size for 5G Application,” IEEE Access., pp. 1-9, vol. 20,May. 2019
[27] Ryo Ishikawa, Yoichiro Takayama, and Kazuhiko Honjo, “Fully Integrated
Asymmetric Doherty Amplifier Based on Two-Power-Level Impedance Optimization,”
13th Eur. Microw. Int. Circuit Conf., pp. 253–256, Sept. 2018
[28] Cheol Ho Kim, Seunghoon Jee, Gweon-Do Jo, Kwangchun Lee, and Bumman Kim,
“A 2.14-GHz GaN MMIC Doherty Power Amplifier for Small-Cell Base Stations” IEEE
Microw. Wireless Compon. Lett., pp. 263-265, Apr. 2014
[29] Hwiseob Lee, Wonseob Lim, Jongseok Bae, Wooseok Lee, Hyunuk Kang, and
Youngoo Yang, “2.6 GHz GaN-HEMT Doherty Power Amplifier Integrated Circuit with
55.5% Efficiency Based on a Compact Load Network” IEEE MTT-S Int’l Microw. Symp.
(IMS), pp. 774-777, Jun. 2017 |