整合蕭特基p型氮化鎵閘極二極體與加強型p型氮化鎵閘極高電子遷移率電晶體之新型電晶體

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姓名

賴育辰(Yu-Chen Lai) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

整合蕭特基p型氮化鎵閘極二極體與加強型p型氮化鎵閘極高電子遷移率電晶體之新型電晶體
(A New Transistor by Integrating Schottky P-GaN Gate Diode and P-GaN Gate AlGaN/GaN HEMT)

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摘要(中)

相較於單一HEMT，SPGD-HEMT擁有較低的閘極漏電流，在VGS = 10 V、VDS = 0 V時降低約10倍。在轉換特性與輸出特性方面，SPGD-HEMT之臨界電壓VTH提升了約0.1 V，同時保持了差不多的汲極電流與導通電阻。反向導通能力方面，在ID = 1 mA/mm、VGS = -4 V時反向導通電壓降低了約2.3 V，可降低元件閘極關閉時的反向導通損耗。在電容特性方面，SPGD-HEMT在輸入電容、輸出電容、逆向轉換電容皆明顯的降低，減少元件在切換時的損耗。動態切換方面，隨著汲極關閉電壓增加時，SPGD-HEMT之動態導通電阻增加幅度較低，顯示其在高壓切換時更具優勢。元件之崩潰電壓在基板浮接時HEMT為929 V，SPGD-HEMT為1209 V，提升約280 V。在閘極崩潰量測方面，在閘極施加一定電壓(VGS = 10, 11 V)，HEMT之閘極崩潰時間約為32 s與473 s，但在相同條件下，SPGD-HEMT能持續6000 s而沒有發生閘極崩潰。

摘要(英)

Comparing with the conventional HEMT, the SPGD-HEMT has smaller gate leakage, which has decreased about 10 times at VGS = 10 V, VDS = 0 V. In terms of transfer characteristic and output characteristic, the SPGD-HEMT a larger VTH, while keeping the similar drain current and RON. The SPGD-HEMT also shows better reverse conduction capability. The reverse turn on voltage of SPGD-HEMT is decreased by 2.3 V at ID = 1 mA/mm, VGS = -4 V, which means that SPGD-HEMT has less reverse conduction loss. In C-V measurement, the Ciss and Crss of the SPGD-HEMT are significantly decreased due to the SPGD connected to the gate of HEMT. In dynamic switching measurement, with the increase of VDS.OFF, the SPGD-HEMT shows less increase in the dynamic RON, showing the advantage in high voltage switching. With substrate floating, the device breakdown voltage of HEMT is 929 V, while the device breakdown voltage of the SPGD-HEMT is increased to 1209 V. In gate breakdown measurement, the gate of the device is constantly stressed (VGS = 10, 11 V). The conventional HEMT has the gate breakdown time of 32 s and 473 s, while the SPGD-HEMT does not show gate breakdown under the same gate stress even the gate stress time is over 6000 s.

關鍵字(中)

★ 氮化鎵
★ p型氮化鎵
★ 高電子遷移率電晶體
★ 二極體

關鍵字(英)

★ GaN
★ p-GaN
★ HEMT
★ Diode

論文目次

摘要 I
Abstract II
致謝 III
目錄 IV
圖目錄 VI
表目錄 IX
第一章緒論 1
1.1 前言 1
1.2 氮化鎵材料特性 2
1.3 加強型氮化鎵電晶體之閘極特性改善文獻回顧 4
1.4 研究動機與目的 11
1.5 論文架構 12
第二章蕭特基p型氮化鎵閘極二極體與p型氮化鎵閘極高電子遷移率電晶體之元件結構與測量分析 13
2.1 前言 13
2.2 SPGD結構與特性量測分析 13
2.2.1 SPGD相關文獻回顧 13
2.2.2 SPGD元件結構與工作原理 17
2.2.3 SPGD直流I-V特性量測分析 19
2.2.4 SPGD特性模擬 21
2.3 HEMT元件結構與特性量測 24
2.3.1 HEMT元件結構 24
2.3.2 HEMT直流I-V特性量測 24
2.4 結論 27
第三章整合蕭特基p型氮化鎵閘極二極體與p型氮化鎵閘極高電子遷移率電晶體之新型電晶體 28
3.1 前言 28
3.2 新型電晶體SPGD-HEMT之元件結構與工作原理 28
3.3 新型電晶體SPGD-HEMT之直流I-V特性量測分析 29
3.3.1 閘極漏電流、轉換特性、輸出特性量測分析 29
3.3.2 反向導通特性量測分析 32
3.3.3 元件崩潰特性量測分析 33
3.3.4 直流I-V特性變溫量測及分析 34
3.3.5 SPGD-HEMT直流I-V特性提升原因探討 37
3.4 新型電晶體SPGD-HEMT之電容、動態切換、閘極崩潰時間量測分析 40
3.4.1 電容特性量測 40
3.4.2 動態切換量測 44
3.4.3 閘極崩潰時間量測 47
3.5 結論 48
第四章結論 49
參考文獻 50

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指導教授

辛裕明(Yue-Ming Hsin)

審核日期

2020-8-24

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