應用J類連續模式技術於Ka頻段砷化鎵與C頻段氮化鎵功率放大器之研製

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姓名

紀品瑜(Pin-Yu Chi) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

應用J類連續模式技術於Ka頻段砷化鎵與C頻段氮化鎵功率放大器之研製
(Implementations on Ka-band GaAs and C-band GaN Power Amplifiers Using Class-J continuous mode Techniques)

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摘要(中)

本論文利用穩懋半導體WINTM 0.15-µm GaAs與0.25-µm GaN製程設計三顆功率放大器。電路設計上選擇操作於C頻段與Ka頻段，首先模擬不同製程之電晶體特性，選擇最佳之電晶體尺寸與操作電流密度，結合J類諧波調節網路形成寬頻且高效率匹配，最後量測電路特性以驗證電路設計之結果。
第一顆使用WINTM 0.15-µm GaAs製程於Ka頻帶之J類功率放大器，電路設計採全積體化之兩級共源極電路架構，輸出端利用緊湊的基頻、二倍頻匹配網路達到J類的設計，輸入端與級間匹配則以最大功率作最大輸出匹配。量測結果為3-dB頻寬為25.5-28.6 GHz，最大傳輸增益為16.63 dB，飽和輸出功率為27.36 dBm，1-dB 增益壓縮點輸出功率為26.46 dBm，晶片面積為1.12 (1.4 × 0.8) mm2。
第二顆使用WINTM 0.15-µm GaAs製程於Ka頻帶之J類功率放大器，電路設計採全積體化之兩級共源極電路架構，輸出端利用超緊湊的基頻、二倍頻匹配網路達到高效率J類的設計，輸入端與級間匹配則以最大功率作最大輸出寬頻匹配，量測結果為3-dB頻寬為27.4-29.1 GHz，傳輸最大增益為16.84 dB，飽和輸出功率為28.15 dBm，1-dB 增益壓縮點輸出功率為27.04 dBm，晶片面積為0.988 (1.3 × 0.76) mm2。
第三顆使用WINTM 0.25-µm GaN製程於C頻帶之J類功率放大器，電路設計採全積體化之兩級共源極電路架構，輸出端利用超緊湊的基頻、二倍頻匹配網路達到高效率J類的設計，輸入端與級間匹配則作寬頻匹配，為了應用在N77頻段，其操作頻寬為3 - 4.3 GHz，傳輸最大增益為23.94 dB，飽和輸出功率為39.62 dBm，1-dB 增益壓縮點輸出功率為39.6 dBm，晶片面積為4.342 (2.6 × 1.67) mm2。

摘要(英)

The thesis developed three power amplifiers that were designed in WINTM 0.15-µm GaAs, and 0.25-µm GaN for both C-band and Ka-band operations. Firstly, the transistor characteristics of different processes were simulated to choose the best transistor size and current density. The continuous class-J technique was adapted for high efficiency and broadband matching performance. Finally, these proof-of-concepts were verified by measuring various circuit performances, such as s-parameters, output power, linearity and digital modulation characteristics.
The first chip presents a Ka-band monolithic microwave integrated circuit (MMIC) power amplifier in WINTM 0.25-µm GaAs technology. The high-efficiency performance is achieved by using continuous class-J mode for output matching networks and high power matching for both input and inter-stage matching networks. The designed power amplifier achieves a 3-dB bandwidth from 25.5 to 28.6 GHz with small signal gain of 16.63 dB. Continuous wave measurements demonstrate a maximum saturated output power of 27.36 dBm and OP1dB of 26.46 dBm, respectively. The chip size is 1.12 (1.4 × 0.8) mm2.
The second chip presents a Ka-band MMIC power amplifier in WINTM 0.25-µm GaAs technology. The high-efficiency and broadband performances are achieved by using continuous Class-J mode for fundamental and second harmonic output matching networks and high power matching for both input and inter-stage matching networks. The amplifier achieves a 3-dB bandwidth from 27.4 to 29.1 GHz with small signal gain of 16.84 dB. Continuous wave measurements demonstrate a maximum saturated output power of 28.15 dBm and OP1dB of 27.04 dBm, respectively. The chip size is 0.988 (1.3 × 0.76) mm2.
The third chip presents a C-band MMIC power amplifier in WINTM 0.25-µm GaN technology. The high-efficiency and broadband performances are achieved by using continuous Class-J mode for fundamental and second harmonic output matching networks and broadband matching for both input and inter-stage matching networks. The amplifier achieves a 3-dB bandwidth from 3 to 4.3 GHz with small signal gain of 23.94 dB. Continuous wave measurements demonstrate a maximum saturated output power of 39.62 dBm and OP1dB of 39.6 dBm, respectively. The chip size is 4.342 (2.6 × 1.67) mm2.

關鍵字(中)

★ J類功率放大器
★ 連續模式技術

關鍵字(英)

★ Class J power amplifier
★ continuous mode techniques

論文目次

摘要 I
Abstract II
誌謝 IV
目錄 V
圖目錄 VII
表目錄 X
第一章緒論 1
1-1 研究動機 1
1-2 研究成果 2
1-3 章節簡介 2
第二章應用於Ka頻段J類功率放大器 3
2-1 研究現況 3
2-2 J類功率放大器分析 5
2-3 考慮Cds非線性效應 8
2-4 應用於 Ka 頻段之J類功率放大器 10
2-4-1 應用於 Ka 頻段之J類功率放大器設計 10
2-4-2 電路模擬與量測結果 18
2-4-3 結果比較與討論 29
2-5 應用於 Ka 頻段之超緊湊高效率J類功率放大器 34
2-5-1 應用於 Ka 頻段之超緊湊高效率J類功率放大器設計 34
2-5-2 電路模擬與量測結果 39
2-5-3 結果比較與討論 50
第三章應用於C頻段之瓦特級J類功率放大器 59
3-1 研究現況 59
3-2 應用於 C 頻段之瓦特級J類功率放大器 61
3-2-1 應用於 C 頻段之瓦特級J類功率放大器設計 61
3-2-2 電路模擬結果 72
3-2-3 結果比較與討論 81
第四章結論 83
4-1 結論 83
4-2 未來方向 84
附錄A A 0.18-μm製程設計之X 頻段之Current-Reuse暨三階諧波消除技術吉爾波升頻混頻器 85
A-1 前言 85
A-2 電路架構及原理 86
A-3 電路模擬與量測結果 89
A-4 結果與討論 96
參考文獻 98

參考文獻

[1] D. P. Nguyen, X. Tran, N. L. K. Nguyen, P. T. Nguyen, and A. Pham, "A wideband high efficiency Ka-band MMIC power amplifier for 5G wireless communications," in 2019 IEEE International Symposium on Circuits and Systems (ISCAS), 2019, pp. 1-5.
[2] D. P. Nguyen, B. L. Pham, and A. Pham, "A compact Ka-band Integrated doherty amplifier with reconfigurable input network," IEEE Transactions on Microwave Theory and Techniques, vol. 67, no. 1, pp. 205-215, 2019.
[3] D. P. Nguyen and A. Pham, "An ultra compact watt-level Ka-band stacked-FET power amplifier," IEEE Microwave and Wireless Components Letters, vol. 26, no. 7, pp. 516-518, 2016.
[4] G. Lv, W. Chen, X. Chen, and Z. Feng, "An energy-efficient Ka/Q dual-band power amplifier MMIC in 0.1- um GaAs process," IEEE Microwave and Wireless Components Letters, vol. 28, no. 6, pp. 530-532, 2018.
[5] W. H. Doherty, "A new high efficiency power amplifier for modulated waves," Proceedings of the Institute of Radio Engineers, vol. 24, no. 9, pp. 1163-1182, 1936.
[6] S. Saxena, K. Rawat, and P. Roblin, "Continuous Class-B/J power amplifier using a nonlinear embedding technique," IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 64, no. 7, pp. 837-841, 2017.
[7] X. Du, M. Helaoui, and F. M. Ghannouchi, "Bandwidth performance analysis of DLM PAs Including the Class-A/B/J continuum," in 2019 IEEE Asia-Pacific Microwave Conference (APMC), 2019, pp. 1176-1178.
[8] Z. A. Mokhti, J. Lees, C. Cassan, A. Alt, and P. J. Tasker, "The nonlinear drain–source capacitance effect on continuous-mode Class-B/J power amplifiers," IEEE Transactions on Microwave Theory and Techniques, vol. 67, no. 7, pp. 2741-2747, 2019.
[9] P. Wright, J. Lees, J. Benedikt, P. J. Tasker, and S. C. Cripps, "A methodology for realizing high efficiency Class-J in a linear and broadband PA," IEEE Transactions on Microwave Theory and Techniques, vol. 57, no. 12, pp. 3196-3204, 2009.
[10] H. Cai, L. Mao, J. Cong, and Y. Zhang, "Design of a dual-band high efficiency class-J power amplifier," in 2017 9th International Conference on Advanced Infocomm Technology (ICAIT), 2017, pp. 75-79.
[11] T. Yao et al., "Algorithmic design of CMOS LNAs and PAs for 60-GHz radio," IEEE Journal of Solid-State Circuits, vol. 42, no. 5, pp. 1044-1057, 2007.
[12] C. Lin and H. Chang, "A broadband injection-locking Class-E power amplifier," IEEE Transactions on Microwave Theory and Techniques, vol. 60, no. 10, pp. 3232-3242, 2012.
[13] G. Lv, W. Chen, and Z. Feng, "A compact and broadband Ka-band asymmetrical GaAs doherty power amplifier MMIC for 5G communications," in 2018 IEEE/MTT-S International Microwave Symposium - IMS, 2018, pp. 808-811.
[14] G. Lv, W. Chen, X. Chen, F. M. Ghannouchi, and Z. Feng, "A compact Ka/Q dual-band GaAs MMIC doherty power amplifier with simplified offset lines for 5G applications," IEEE Transactions on Microwave Theory and Techniques, vol. 67, no. 7, pp. 3110-3121, 2019.
[15] G. Nikandish, R. B. Staszewski, and A. Zhu, "Bandwidth enhancement of GaN MMIC doherty power amplifiers using broadband transformer-based load modulation network," IEEE Access, vol. 7, pp. 119844-119855, 2019.
[16] G. Nikandish, R. B. Staszewski, and A. Zhu, "Design of highly linear broadband continuous mode GaN MMIC power amplifiers for 5G," IEEE Access, vol. 7, pp. 57138-57150, 2019.
[17] 黃禮賢, "互補式金氧半導體Ku頻段寬頻功率放大器與K頻段開關鍵控發射機暨X頻段氮化鎵瓦特級功率放大器之研製," 碩士, 電機工程學系, 國立中央大學, 桃園縣, 2019.
[18] G. Lv, W. Chen, L. Chen, and Z. Feng, "A fully integrated C-band GaN MMIC doherty power amplifier with high gain and high efficiency for 5G application," in 2019 IEEE MTT-S International Microwave Symposium (IMS), 2019, pp. 560-563.
[19] G. Lv, W. Chen, X. Liu, F. M. Ghannouchi, and Z. Feng, "A fully integrated C-Band GaN MMIC doherty power amplifier with high efficiency and compact size for 5G application," IEEE Access, vol. 7, pp. 71665-71674, 2019.
[20] T. Cappello, P. Pednekar, C. Florian, S. Cripps, Z. Popovic, and T. W. Barton, "Supply- and load-modulated balanced amplifier for efficient broadband 5G base stations," IEEE Transactions on Microwave Theory and Techniques, vol. 67, no. 7, pp. 3122-3133, 2019.
[21] J. Vuolevi, T. Rahkonen, and J. Manninen, "Measurement technique for characterizing memory effects in RF power amplifiers," in RAWCON 2000. 2000 IEEE Radio and Wireless Conference (Cat. No.00EX404), 2000, pp. 195-198.
[22] S. A. Z. Murad, M. M. Shahimin, R. K. Pokharel, H. Kanaya, and K. Yoshida, "A fully integrated CMOS up-conversion mixer with input active balun for wireless applications," in 2011 IEEE Regional Symposium on Micro and Nano Electronics, 2011, pp. 112-116.
[23] H. Chiou and H. Chou, "A 0.4 V microwatt power consumption current-reused Up-conversion mixer," IEEE Microwave and Wireless Components Letters, vol. 23, no. 1, pp. 40-42, 2013.
[24] H. Ping-Chen et al., "A compact 35-65 GHz up-conversion mixer with integrated broadband transformers in 0.18-/spl mu/m SiGe BiCMOS technology," in IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006, 2006, p. 4 pp.

指導教授

邱煥凱

審核日期

2020-8-17

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