參考文獻 |
[1] O. Ambacher, J. Smart, J. Shealy, N. Weimann, K. Chu, M. Murphy, W. Schaff, L. Eastman, R. Dimitrov, and L. Wittmer, "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures, " Journal of Applied Physics, vol. 85, no. 6, pp. 3222-3233, 1999.
[2] Fabio Sacconi, Aldo Di Carlo, P. Lugli, and Hadis Morkoç, "Spontaneous and Piezoelectric Polarization Effects on the Output Characteristics of AlGaN/GaN Heterojunction Modulation Doped FETs, " IEEE Transactions on electron devices, vol. 48, pp. 450-457, 2001
[3] Jason Chen, "RF GaN Model Survey and Model Parameter Extraction Flows, " Keysight EEsof EDA, 2019.
[4] V. Zomorrodian, Y. Pei, U. K. Mishra, and R. A. York, "A scalable EE HEMT based large signal model for multi-finger AlGaN/GaN HEMTs for linear and non-linear circuit design," physical status solidi (c), vol. 7, no. 10, pp. 2450-2454, 2010.
[5] C. William, "Small and large signal modeling of mm-wave HEMT devices. " PhD thesis, University of South Florida, 2003.
[6] I. Angelov, H. Zirath, and N. Rosman, "A new empirical nonlinear model for HEMT and MESFET devices," Microwave Theory and Techniques, IEEE Transactions on, vol. 40, no. 12, pp. 2258-2266, 1992.
[7] L. Dunleavy, C. Baylis, W. Curtice, and R. Connick, " Modeling GaN: Powerful but challenging," Microwave Magazine, IEEE, vol. 11, no. 6, pp. 82-96, 2010.
[8] Q. Chen, "Latest advances in gallium nitride HEMT modeling," 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Guilin, pp. 1-4, 2014.
[9] J. Xu, R. Jones, S. A. Harris, T. Nielsen and D. E. Root, "Dynamic FET model - DynaFET – for GaN transistors from NVNA active source injection measurements," 2014 IEEE MTT-S International Microwave Symposium (IMS2014), Tampa, FL, pp. 1-3, 2014.
[10] S. Khandelwal, Y. S. Chauhan and T. A. Fjeldly, "Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices," IEEE Transactions on Electron Devices, vol.59, no.10, pp. 2856-2860, Oct. 2012.
[11] S. Khandelwal et al., "Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design," in IEEE Transactions on Electron Devices, vol. 60, no. 10, pp. 3216-3222, Oct. 2013.
[12] A. Dasgupta, S. Ghosh, Y. S. Chauhan and S. Khandelwal, "ASM-HEMT: Compact model for GaN HEMTs," 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Singapore, pp. 495-498, 2015.
[13] Sourabh Khandelwal, Yogesh Singh Chauhan, Tor A. Fjeldly, Sudip Ghosh, Ahtisham Pampori, Dhawal Mahajan, Raghvendra Dangi, Sheikh Aamir Ahsan, "ASM GaN: Industry Standard Model for GaN RF and Power Devices- Part 1: DC, CV, and RF Model, " IEEE Transactions on Electron Devices, vol. 66, no. 1, pp.81, 2019.
[14] A. Dasgupta, S. Ghosh, Y. S. Chauhan and S. Khandelwal, "ASM-HEMT: Compact model for GaN HEMTs," 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Singapore, pp. 495-498, 2015.
[15] S. Khandelwal, Y. S. Chauhan and T. A. Fjeldly, "Analytical Modeling of Surface-Potential and Intrinsic Charges in AlgAN/GaN HEMT Devices," IEEE Transactions on Electron Devices, vol. 59, no. 10, pp. 2856-2860, 2012.
[16] G. Meneghesso, F. Rampazzo, P. Kordos, G. Verzellesi, and E. Zanoni, " Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs," Electron Devices, IEEE Transactions on, vol. 53, no. 12, pp. 2932-2941, 2006.
[17] H. Hasegawa, T. Inagaki, S. Ootomo, and T. Hashizume, "Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors," Journal of Vacuum Science Vamp; Technology B: Microelectronics and Nanometer Structures, vol. 21, no. 4, pp. 1844-1855, 2003.
[18] R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, " The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs," Electron Devices, IEEE Transactions on, vol. 48, no. 3, pp. 560-566, 2001.
[19] G. Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. A. Khan, M. Shur, and R. Gaska, "Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors," Applied Physics Letters, vol. 79, no. 16, pp. 2651-2653, 2001.
[20] S. C. Binari, K. Ikossi, J. A. Roussos, W. Kruppa, D. Park, H. B. Dietrich, D. D. Koleske, A. E. Wickenden, and R. L. Henry, " Trapping effects and microwave power performance in AlGaN/GaN HEMTs," Electron Devices, IEEE Transactions on, vol. 48, no. 3, pp. 465-471, 2001
[21] M. Liang and M. E. Law, "Influence of lattice self-heating and hot-carrier transport on device performance," IEEE Trans. Electron Devices, vol. 41, pp. 2391-2398, Dec. 1994.
[22] S. Khandelwal, Nitin Goyal, and Tor A. Fjeldly, "Device geometry scalable thermal resistance model for GaN HEMT devices on Sapphire substrate," in Reliability of Compound Semiconductor Workshop. Palm Springs, USA, April 2011.
[23] M. Kuball, S. Rajasingam, and A. Sarua, "Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy, " Applied Physics Letters, vol. 82, no. 1, pp. 6, 2003. |