內外側摻雜濃度變化對圓柱接面之電場公式的推導與模擬驗證

以作者查詢圖書館館藏

、以作者查詢臺灣博碩士

、以作者查詢全國書目

、勘誤回報

、線上人數：35

、訪客IP：18.225.234.226

姓名

陳廷宇(Ting-Yu Chen) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

內外側摻雜濃度變化對圓柱接面之電場公式的推導與模擬驗證
(Derivation and Verification of Electric-Field Equation in Low-high-doping Cylindrical PN Junction)

相關論文

★ 表面電漿共振效應於光奈米元件之數值研究	★ 金氧半電容元件的暫態模擬之數值量測
★ 雙載子電晶體在一維和二維空間上模擬的比較	★ 改善後的階層化不完全LU法及其在二維半導體元件模擬上的應用
★ 一維雙載子接面電晶體數值模擬之驗證及其在元件與電路混階模擬之應用	★ 階層化不完全LU法及其在準靜態金氧半場效電晶體電容模擬上的應用
★ 探討分離式簡化電路模型在半導體元件模擬上的效益	★ 撞擊游離的等效電路模型與其在半導體元件模擬上之應用
★ 二維半導體元件模擬的電流和電場分析	★ 三維半導體元件模擬器之開發及SOI MOSFET特性分析
★ 元件分割法及其在二維互補式金氧半導體元件之模擬	★ 含改良型L-ILU解法器及PDM電路表述之二維及三維元件數值模擬器之開發
★ 含費米積分之高效率載子解析模型及其在元件模擬上的應用	★ 量子力學等效電路模型之建立及其對元件模擬之探討
★ 適用於二維及三維半導體元件模擬的可調變式元件切割法	★ 整合式的混階模擬器之開發及其在振盪電路上的應用

檔案

[Endnote RIS 格式]

[Bibtex 格式]

[相關文章]

[文章引用]

[完整記錄]

[館藏目錄]

[檢視]

[下載]

本電子論文使用權限為同意立即開放。
已達開放權限電子全文僅授權使用者為學術研究之目的，進行個人非營利性質之檢索、閱讀、列印。
請遵守中華民國著作權法之相關規定，切勿任意重製、散佈、改作、轉貼、播送，以免觸法。

摘要(中)

本篇論文主要重點為在內側濃度低於外側濃度時，電場大小比較會呈現相反順序。平面接面最大，圓柱型接面次之，球型接面最小。傳統的設計是內側濃度高於外側濃度，電場大小會呈現球型接面最大，圓柱型接面次之，平面接面最小。電場越大元件就越容易崩潰，所以曲面的設計跟元件的崩潰電壓有重要的關係。我們主要是藉由建立曲面對稱性相對較優的梯形網格，來模擬比較圓柱形接面在摻雜濃度P − N+與P+ − N情況下電場的關係，並用簡單的幾何模型來推導電場解析公式。而梯形網格是由兩個三角形網格模組所組成的，分別是銳角三角形與鈍角三角形，以此來模擬圓柱形接面的電場，並比較兩種不同摻雜濃度所得結果，最後會比較平面、圓柱型與球型接面電場之間的關係，並將程式模擬之比較結果呈現出來。

摘要(英)

This thesis discusses the electric-field comparison between the plan junction, the cylindrical junction, and the spherical junction. If the inside concentration is lower than the outside, the electric-field comparison will be reversed. The plane junction is the largest, the
cylindrical junction is the second, and the spherical junction is the smallest. When the inside concentration of the traditional design is higher than the outside, the electric field of the spherical junction will show the largest, the cylindrical junction the second, and the planar junction the smallest. The larger the electric field, the smaller the breakdown voltage. Therefore,
the design of the curved surface has an important relationship with the breakdown voltage of the PN junction. Our main simulation is on the electric field of the cylindrical junction with P − N+ and P+ − N. We establish a trapezoidal grid which is composed of acute triangle and obtuse triangle to simulate electric field, and use a simple geometric model to derive the
analytical electric-field equations with P − N+ and P+ − N Finally, we compare the relationship between the three junctions.

關鍵字(中)

★ 蔡曜聰
★ 電場公式
★ 摻雜濃度變化
★ 程式模擬
★ 模擬驗證
★ 圓柱接面

關鍵字(英)

論文目次

摘要 ................. i
Abstract ............ ii
誌謝 ................ iii
目錄 ................ iv
圖目錄 ............... v
表目錄 .............. vi
第一章簡介 .......... 1

第二章圓柱形單邊陡接面之理論物理與公式解析 .. 4
2-1 摻雜濃度與接面結構對接面電場之影響 .. 4
2-2 平面單邊陡接面之理論電場解析公式推導 .. 7
2-3 圓柱形單邊陡接面之理論電場解析公式推導 .. 11

第三章圓柱形單邊陡接面之模擬驗證 .. 18
3-1 梯形網格結構定義 .. 18
3-2 圓柱形P − N+與P+ − N接面之模擬驗證 ..21
3-3 摻雜濃度變化對圓柱形單邊陡接面之影響 .. 24

第四章球型單邊陡接面之理論物理與公式解析 .. 28
4-1 球型單邊陡接面之理論電場解析公式推導 .. 28
4-2 平面、圓柱型、球型單邊陡接面電場之關係探討 .. 36
4-3 平面與圓柱型單邊陡接面電場之模擬比較與探討 .. 39

第五章結論 .. 42

參考文獻 .. 43

參考文獻

[1] P. H. Cho ,“Geometric Model and Simulation Verification of Cylindrical PN Junction for
Electric iield Characteristics” M. S. Thesis, Institute of EE, Nation Central University,
Taiwan, Republic of China, 2019.
[2] P. N. Chen ,“Breakdown simulation of spherical P-N junction with spherical coordinate
system” M. S. Thesis, Institute of EE, Nation Central University, Taiwan, Republic of China,
2013.
[3] A. Salceanu, E. Lunca, B. D. Alistar and S. Ursache, "Upon the Influence of Charge Image
on the Electric iield Intensity," 2019 International Conference on Electromechanical and
Energy Systems (SIELMEN), Craiova, Romania, 2019
[4] B. Qi, X. Zhao, S. Zhang, M. Huang and C. Li, "Measurement of the electric field strength
in transformer oil under impulse voltage," in IEEE Transactions on Dielectrics and Electrical
Insulation, vol. 24, no. 2, pp. 1256-1262, April 2017
[5] P. Zhao and L. Guo, "Numerical Simulations of Air Breakdown by Microwave With Two
Orthogonal Electric iields," in IEEE Transactions on Plasma Science, vol. 46, no. 3, pp. 489
493, March 2018
[6] H. Guan, H. Qian, H. Kong, X. Wang, i. iang and G. Hu, "Simulation calculation for total
electric field of three-phase power cable," 2016 IEEE International Conference on High
Voltage Engineering and Application (ICHVE), Chengdu, 2016
[7] W. Sun, L. Yang, J. Hao and i. Zare, "3D Electric iield Simulation of Converter
Transformer with Real Insulation Materials Utilized in HVDC Systems," 2018 IEEE
International Conference on High Voltage Engineering and Application (ICHVE), ATHENS,
Greece, 2018.
[8] M. irigura-Iliasa, A. i. Olariu, i. I. Baloi, i. M. irigura-Iliasa, D. Vatau and R. C.
Petrenci, "Measurement of Electric iield Intensity nearby High Voltage Power
Stations," 2019 International Conference on ENERGY and ENVIRONMENT (CIEM),
Timisoara, Romania, 2019
[9] R. A. Jabr, M. Hamad, Y. M. Mohanna, “Newton-Raphson solution of Poisson′s equation
in a pn diode”, Int. J. Electrical Eng. Educ,pp.27-29, Jan. 2007
[10] Y . Q. Hong, “Development of tetrahedron circumcenter element and its applications to
3D semiconductor device simulation” M.S. Thesis, Institute of EE, Nation Central
University, Taiwan, Republic of China, pp. 32-38, 2017.
[11] Hitschfeld, Nancy, Paolo Conti, and Wolfgang iichtner. "Mixed element trees: a
generalization of modified octrees for the generation of meshes for the simulation of
complex 3-D semiconductor device structures." IEEE transactions on computer-aided
design of integrated circuits and systems 12.11 1993
[12] M. B. Patil, “New discretization scheme for two-dimensional semiconductor device
simulation on triangular grid,” IEEE Trans, Computer-Aided Design of Integrated Circuits
and Systems, vol. 17, no. 11, pp. 1160-1165, Nov. 1998.
[13] K. C. Chien ,“iinding internal vector from the barycenter of vector in tetrahedron for 3
D semiconductor device simulation” M. S. Thesis, Institute of EE, Nation Central University,
Taiwan, Republic of China, 2017.
[14] S. M. Sze, “Semiconductor Devices: Physics and Technology, 3rd Edition: Physics and
Technology” , John Wiley & Sons, 2012.
[15] Z. Pu, Y. Xiong, T. Wu, Z. Lu and C. iang, "Simulation Analysis on Influence of
Combustion Particles on the Gap Electric iield under DC Voltage," 2018 IEEE International
Conference on High Voltage Engineering and Application (ICHVE), ATHENS, Greece, 2018

指導教授

蔡曜聰

審核日期

2020-7-2

推文