參考文獻 |
[1] A. Raciti, S. A. Rizzo, N. Salerno, G. Susinni, C. Buccella, C. Cecati and M. Tinari, "State of the art and emerging solid-state power devices in the perspective of more electric aircraft," AEIT International Annual Conference, Bari, 2018, pp. 1-6, doi: 10.23919/AEIT.2018.8577345.
[2] G. Longobardi, "GaN for power devices: Benefits, applications, and normally-off technologies," International Semiconductor Conference, Sinaia, 2017, pp. 11-18, doi: 10.1109/SMICND.2017.8101144.
[3] U. K. Mishra, L. Shen, T. E. Kazior and Y. Wu, "GaN-Based RF Power Devices and Amplifiers," Proc. IEEE, vol. 96, no. 2, pp. 287-305, Feb. 2008, doi: 10.1109/JPROC.2007.911060.
[4] O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger and J. Hilsenbeck, “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures,” J. Appl. Phys., vol. 85, no. 6, pp. 3222–3233, Mar. 1999, doi: 10.1063/1.371866.
[5] M. J. Scott, L. Fu, X. Zhang, J. Li, C. Yao, M. Sievers, and J. Wang, “Merits of gallium nitride based power conversion,” Semicond. Sci. Technol., 2013, 28, 074013, doi: 10.1088/0268-1242/28/7/074013
[6] W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda and I. Omura, "Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications," IEEE Trans. Electron Devices, vol. 53, no. 2, pp. 356-362, Feb. 2006, doi: 10.1109/TED.2005.862708.
[7] Y. Cai, Y. Zhou, K. M. Lau and K. J. Chen, "Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode," IEEE Trans. Electron Devices, vol. 53, no. 9, pp. 2207-2215, Sept. 2006, doi: 10.1109/TED.2006.881054.
[8] B. Lu, E. Matioli and T. Palacios, "Tri-Gate Normally-Off GaN Power MISFET," IEEE Electron Device Lett., vol. 33, no. 3, pp. 360-362, March 2012, doi: 10.1109/LED.2011.2179971.
[9] Y. Uemoto, M. Hikita, H. Ueno, H. Matsuo, H. Ishida, M. Yanagihara, T. Ueda, T. Tanaka and D. Ueda, "Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation," IEEE Trans. Electron Devices, vol. 54, no. 12, pp. 3393-3399, Dec. 2007, doi: 10.1109/TED.2007.908601.
[10] M. Ishida, Y. Uemoto, T. Ueda, T. Tanaka and D. Ueda, "GaN power switching devices," IEEE Int. Power Electron. Conf., Jun. 2010, pp. 1014–1017, doi: 10.1109/IPEC.2010.5542030.
[11] S. Kaneko, M. Kuroda, M. Yanagihara, A. Ikoshi, H. Okita, T. Morita, K. Tanaka, M. Hikita, Y. Uemoto, S. Takahashi and T. Ueda, "Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain," 27th IEEE Int. Symp. Power Semiconductor Devices ICs, 2015, pp. 41-44, doi: 10.1109/ISPSD.2015.7123384.
[12] H. Okita, M. Hikita, A. Nishio, T. Sato, K. Matsunaga, H. Matsuo, M. Mannoh and Y. Uemoto, "Through recessed and regrowth gate technology for realizing process stability of GaN-GITs," 28th IEEE Int. Symp. Power Semiconductor Devices ICs, 2016, pp. 23-26, doi: 10.1109/ISPSD.2016.7520768.
[13] C. S. Suh, A. Chini, Y. Fu, C. Poblenz, J. S. Speck and U. K. Mishra, "p-GaN/AlGaN/GaN Enhancement-Mode HEMTs," 64th IEEE Device Research Conference, State College, 2006, pp. 163-164, doi: 10.1109/DRC.2006.305167.
[14] I. Hwang, J. Kim, H. S. Choi, H. Choi, J. Lee, K. Y. Kim, J.-B. Park, J. C. Lee, J. Ha, J. Oh, J. Shin and U-I. Chung, "p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current," IEEE Electron Device Lett., vol. 34, no. 2, pp. 202-204, Feb. 2013, doi: 10.1109/LED.2012.2230312.
[15] I. Hwang, J. Oh, H. S. Choi, J. Kim, H. Choi, J. Kim, S. Chong, J. Shin and U-I. Chung, "Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage," IEEE Electron Device Lett., vol. 34, no. 5, pp. 605-607, May 2013, doi: 10.1109/LED.2013.2249038.
[16] L. Efthymiou, G. Longobardi, G. Camuso, T. Chien, M. Chen, and F. Udrea, “On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices” Appl. Phys. Lett., 2017, 110, 123502, doi:10.1063/1.4978690
[17] A. N. Tallarico, A. N. Tallarico, S. Stoffels, P. Magnone, N. Posthuma, E. Sangiorgi, S. Decoutere and C. Fiegna, "Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs," IEEE Electron Device Lett., vol. 38, no. 1, pp. 99-102, Jan. 2017, doi: 10.1109/LED.2016.2631640.
[18] T.-L. Wu, B. Bakeroot, H. Liang, N. Posthuma, S. You, N. Ronchi, S. Stoffels, D. Marcon and S. Decoutere, "Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures," IEEE Electron Device Lett., vol. 38, no. 12, pp. 1696-1699, Dec. 2017, doi: 10.1109/LED.2017.2768099.
[19] Y. Wang, M. Hua, G. Tang, J. Lei, Z. Zheng, J. Wei and K. J Chen, "Dynamic OFF-State Current (Dynamic IOFF) in p-GaN Gate HEMTs With an Ohmic Gate Contact," IEEE Electron Device Lett., vol. 39, no. 9, pp. 1366-1369, Sept. 2018, doi: 10.1109/LED.2018.2852699.
[20] Y. Wang, J. Wei, S. Yang, J. Lei, M. Hua and K. J. Chen, "Investigation of Dynamic IOFF Under Switching Operation in Schottky-Type p-GaN Gate HEMTs," IEEE Trans. Electron Devices, vol. 66, no. 9, pp. 3789-3794, Sept. 2019, doi: 10.1109/TED.2019.2930315.
[21] H. Li, C. Yao, C. Han, J. A. Brothers, X. Zhang and J. Wang, "Evaluation of 600 V GaN based gate injection transistors for high temperature and high efficiency applications," IEEE 3rd Workshop Wide Bandgap Power Devices Appl., 2015, pp. 85-91, doi: 10.1109/WiPDA.2015.7369300.
[22] N. Nosaka, W. Okada, T. Uematsu and T. Zaitsu, "Novel GaN GIT Gate Driving Technique Using Two-Step Turn-Off Fashion," IEEE Energy Conversion Congress and Exposition (ECCE), 2020, pp. 3131-3138, doi: 10.1109/ECCE44975.2020.9236236.
[23] H. Wang, J. Wei, R. Xie, C. Liu, G. Tang and K. J. Chen, "Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations," IEEE Trans. on Power Electronics, vol. 32, no. 7, pp. 5539-5549, July 2017, doi: 10.1109/TPEL.2016.2610460.
[24] T. Oeder and M. Pfost, "Gate-Stress-Induced Threshold Voltage Instabilites, a Comparison of Ohmic and Schottky p-Gate GaN HEMTs," 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2020, pp. 1-5, doi: 10.1109/WiPDAAsia49671.2020.9360288.
[25] Infineon, “IGT60R070D1 600V CoolGaN™ enhancement-mode Power Transistor,” IGT60R070D1 datasheet.
[26] GaN systems,“GS66508B Bottom-side cooled 650 V E-mode GaN transistor Datasheet,” GS66508B datasheet.
[27] A. Stockman et al., "Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors," in IEEE Transactions on Electron Devices, vol. 65, no. 12, pp. 5365-5372, Dec. 2018, doi: 10.1109/TED.2018.2877262.
[28] Agilent Technologies, “Agilent N1267A HVSMU/HCSMU fast switch dynamic on-resistance measurement in GaN FET,” Agilent Technologies, Sep. 2013.
[29] Y. Uemoto, M. Hikita, H. Ueno, H. Matsuo, H. Ishida, M. Yanagihara, T. Ueda, T. Tanaka and D. Ueda, "A Normally-off AlGaN/GaN Transistor with RonA=2.6mΩcm2 and BVds=640V Using Conductivity Modulation," Int. Electron Device Meeting (IEDM), 2006, pp. 1-4, doi: 10.1109/IEDM.2006.346930.
[30] Silvaco Inc., “Atlas User’s Manual,” device simulation software, 2016. |