挖洞式無金歐姆接觸之氮化鎵高電子遷移率電晶體

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姓名

游欣容(Xin-Rong You) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

挖洞式無金歐姆接觸之氮化鎵高電子遷移率電晶體
(Au-free Ohmic Contacts in GaN-based HEMTs by Recessed Patterns)

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摘要(中)

本論文針對挖洞式無金氮化鎵歐姆接觸研究，再應用到氮化鎵高電子遷移率電晶體進行電性探討與研究。研究包含磊晶片材料分析、元件的設計與製作、直流電性與動態特性分析以及Silvaco TCAD的模擬。
對於氮化鋁鎵/氮化鎵之磊晶片而言，先回顧金歐姆接觸之氮化鋁鎵/氮化鎵高電子遷移率電晶體之歐姆接觸、直流電性以及動態特性討論。根據結果顯示，在挖洞深度以及挖洞圖形為5.5 nm與1/3/5 μm的條件下，可獲得最佳之歐姆接觸電阻(RC = 0.89 Ω∙mm)；以此條件製作挖洞式金歐姆接觸之氮化鋁鎵/氮化鎵高電子遷移率電晶體並與無挖洞式金歐姆接觸之電晶體進行電性比較。結果顯示挖洞式設計降低歐姆接觸電阻可使元件直流特性獲得改善，但在動態特性方面則出現嚴重的電流崩塌現象。採用無金歐姆金屬搭配低溫(550 ℃)熱退火的方式製作之歐姆接觸，並進行元件直流電性以及動態特性分析。結果顯示，在挖洞深度以及挖洞圖形為27.5 nm與1/3/5 μm的條件下，可獲得最佳之歐姆接觸電阻(RC = 0.98 Ω∙mm)，並以此條件製作挖洞式無金歐姆接觸之氮化鋁鎵/氮化鎵高電子遷移率電晶體，結果呈現相比挖洞式金歐姆接觸之電晶體，改善了元件崩潰電壓特性以及電流崩塌的問題。研究顯示無金歐姆金屬搭配低溫熱退火不僅解決了原本含金製程之CMOS元件製程流程不兼容的問題，還可以改善元件特性。此外，對於具備低片電阻之氮化鋁銦鎵/氮化鎵(AlInGaN/GaN)磊晶片而言，1/3/5 μm的挖洞式圖形亦可獲得最佳歐姆接觸電阻(RC = 1.14 Ω∙mm)，以此條件製作挖洞式無金歐姆接觸之電晶體，並進行電性分析。

摘要(英)

This paper focuses on the study of the Au-free recessed ohmic contact GaN, and then applies it to the GaN HEMTs for electrical discussion and research. The research includes epitaxy structures material, device fabrication, electrical analysis, and Silvaco TCAD simulation.
For AlGaN/GaN epitaxial structures, this study reviews the ohmic contact, electrical characteristics analysis results of Au-based AlGaN/GaN HEMT. The best ohmic contact resistance (RC = 0.89 Ω∙mm) can be obtained under the conditions of the recess depth and the recess pattern are 5.5 nm and 1/3/5 μm, and make Au-based recessed ohmic contact AlGaN/GaN HEMT under this condition and compare with Au-based non-recessed ohmic contact AlGaN/GaN HEMT. The results show that the recess pattern design reduces the ohmic contact resistance to improve the electrical characteristics, but there is a serious current collapse in the dynamic characteristics. Therefore, this study uses Au-free ohmic metal with 550 ℃ low annealing temperature to explore the analysis of ohmic contact and electrical characteristics. According to the results, the best ohmic contact resistance (RC = 0.98 Ω∙mm) can be obtained when the recess depth and the recess pattern are 27.5 nm and 1/3/5 μm, and the Au-free recessed ohmic contact AlGaN/GaN HEMT is fabricated under this condition. The results show that compared to the Au-based recessed ohmic contact HEMTs, the problems of device breakdown voltage characteristics and current collapse are improved. The research has shown that Au-free ohmic metal with low annealing temperature not only solves the problem of CMOS technology incompatibility but also improves the problem of device characteristics.
In addition, for AlInGaN/GaN epitaxial structure with low sheet resistance, a recess pattern of 1/3/5 μm can also obtain the best ohmic contact resistance (RC = 1.14 Ω∙mm), and the Au-free recessed ohmic contact AlInGaN/GaN HEMT is fabricated under this condition for electrical analysis.

關鍵字(中)

★ 氮化鎵
★ 高電子遷移率電晶體
★ 挖洞式無金歐姆接觸
★ 降低導通電阻

關鍵字(英)

論文目次

摘要 ix
Abstract x
致謝 xi
目錄 xii
圖目錄 xv
表目錄 xx
第一章緒論 1
1.1 前言 1
1.2 氮化鎵材料之極化特性 3
1.3 高電子移動率電晶體(HEMT)發展概況 5
1.3.1 傳統式歐姆接觸 8
1.3.2 重新生長式歐姆接觸 10
1.3.3 離子佈植式歐姆接觸 13
1.3.4 挖洞式歐姆接觸 15
1.3.5 無金式歐姆接觸 18
1.4 研究動機與目的 21
1.5 論文架構 22
第二章二種不同能障層GaN HEMTs之磊晶結構與材料分析 23
2.1 AlGaN/GaN HEMTs與AlInGaN/GaN HEMTs之磊晶結構 23
2.2 AlGaN/GaN HEMTs與AlInGaN/GaN HEMTs之材料分析 26
2.2.1 傳輸線模型量測 26
2.2.2 霍爾量測 28
2.2.3 垂直崩潰電壓量測之探討與分析 28
2.2.4 水平崩潰電壓量測之探討與分析 30
2.3 挖洞式無金歐姆接觸之電晶體佈局 32
2.4 元件製作流程 34
2.5 總結 38
第三章挖洞式歐姆接觸之AlGaN/GaN HEMT元件模擬及電性量測分析 39
3.1 Au-based AlGaN/GaN HEMT特性回顧 39
3.1.1 元件製作流程 39
3.1.2 直流特性研究結果 40
3.1.3 動態特性分析 43
3.2 Au-free AlGaN/GaN HEMT之歐姆接觸分析 45
3.2.1 蝕刻深度對歐姆接觸電阻的影響 45
3.2.2 底層鈦金屬厚度對歐姆接觸電阻的影響 46
3.2.3 熱退火溫度對歐姆接觸電阻的影響 47
3.2.4 挖洞式圖形對歐姆接觸電阻的影響 48
3.3 Au-free AlGaN/GaN HEMT之直流特性分析 49
3.3.1 電流-電壓特性分析 50
3.3.2 崩潰電壓特性分析 53
3.3.3 歐姆接觸之動態特性分析 56
3.3.4 動態特性分析 58
3.4 元件模擬特性 63
3.5 總結 68
第四章挖洞式無金歐姆接觸之AlInGaN/GaN HEMT元件電性量測分析 69
4.1 歐姆接觸電阻分析 69
4.1.1熱退火溫度對歐姆接觸電阻的影響 70
4.1.2 挖洞式圖形對歐姆接觸電阻的影響 70
4.2 元件直流特性分析 72
4.2.1 電流-電壓特性分析 73
4.2.2崩潰電壓特性分析 75
4.3 動態特性分析 77
4.3.1 歐姆接觸之動態特性分析 78
4.3.2 動態特性分析 79
4.4 總結 81
第五章結論 82
參考文獻 83
附錄 Ⅰ 陳智偉碩士論文資料參考 89
附錄 Ⅱ Au-free AlGaN/GaN HEMTs以及AlInGaN/GaN HEMTs製程流程 94
附錄 Ш Au-based AlGaN/GaN HEMTs製程流程 98
Publication List/Acknowledgement 102

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指導教授

辛裕明(Yue-Ming Hsin)

審核日期

2021-9-14

推文