無電平轉移的高壓雙N型半橋驅動

以作者查詢圖書館館藏

、以作者查詢臺灣博碩士

、以作者查詢全國書目

、勘誤回報

、線上人數：4

、訪客IP：18.191.174.168

姓名

黃立杰(Li-Jie Huang) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

無電平轉移的高壓雙N型半橋驅動
(Level shifter-less high-voltage dual N-type half-bridge driver)

相關論文

★ 空間隨機樣態分類器的模型精化

檔案

[Endnote RIS 格式]

[Bibtex 格式]

[相關文章]

[文章引用]

[完整記錄]

[館藏目錄]

至系統瀏覽論文 ( 永不開放)

摘要(中)

現今智慧型手機以及移動裝置大量普及，人們追求越來越高性能的電子產品。儘管電子產品的功耗需求大幅增加，然而傳統鋰電池的進步卻無法跟上。人們逐漸將目標從大容量電池轉向高功率充電器。傳統高功率充電器體積大，不易於隨身攜帶，而氮化鎵靠著高功率密度的特性，製成功率元件後能讓快充的體積大幅縮小。氮化鎵(GaN)有著相較於傳統矽（Si）元件更高的工作頻率，矽元件的切換頻率極限約為65~95kHz，再高即會造成元件耗損與不必要的耗能。但氮化鎵製作的元件在高頻時仍有良好效能且穩定度高，高密度功率的特性可以使周邊元件的尺寸跟著縮小，與未來5G基地台密度高所需的特性相符。
本論文針對高壓半橋驅動，在高電位端使用了新穎的電路架構，能夠縮減電路的複雜度，一般傳統的高壓半橋驅動往往都需要額外加上電平轉移電路，而使用了本文的架構後，能夠省略電平轉移設計，使的電路更加精簡。
使用了40V的輸入電壓，操作頻率為1M Hz，佔空比(duty cycle)為45%，應用在降壓轉換器，輸出電壓約為18V，輸出功率約為33W，效率為90%。

摘要(英)

Nowadays, smart phones and mobile devices are widely used, and people are pursuing more and more high-performance electronic products. Although the power consumption requirements of electronic products have increased significantly, the progress of traditional lithium
batteries has not been able to keep up. People gradually shift their target from large-capacity batteries to high-power chargers. Traditional high power chargers are large in size and not easy to carry around. However, GaN relies on the characteristics of high power density to greatly reduce
the volume of fast charging after being made into power components.Gallium nitride (GaN) has a higher operating frequency than traditional silicon (Si) devices. The switching frequency limit of silicon devices is about 65~95kHz. Even higher frequencies will cause component loss and unnecessary energy consumption. However, the components made of gallium nitride still have good performance and high stability at high frequencies. The high-density power characteristics can reduce the size of peripheral components, which is consistent with the characteristics
required for high density of future 5G base stations.
This paper is aimed at high-voltage half-bridge driving, and uses a novel circuit architecture on the high-potential side, which can reduce the complexity of the circuit. Generally, traditional high-voltage half-bridge
drives often require additional level shifting circuits, and use the architecture of this article. Later, the level shift design can be omitted, making the circuit more streamlined.
Using an input voltage of 40V, operating frequency of 1M Hz, duty cycle of 45%, applied to a step-down converter, the output voltage is 18V, the output power is about 33W, and the efficiency is 90%.

關鍵字(中)

★ 無電平轉移

關鍵字(英)

★ Level shifter-less

論文目次

目錄
摘要 I
Abstract II
致謝 III
目錄 IV
圖目錄 V
表目錄 VII
一、緒論 1
1-1 研究背景 1
1-2 文獻回顧 2
1-3 論文大綱 5
二、半橋驅動電路架構與分析 6
2-1 低端驅動電路 6
2-2 高端驅動電路 7
2-3 EED驅動電路 8
2-4 硬開關切換 9
2-5 軟開關切換 10
2-6 損耗分析 [16] 11
三、半橋驅動電路應用及模擬 15
3-1電路規格 15
3-2降壓轉換器同步控制原理與操作 15
3-3實現規格電路之設計 17
3-4模擬結果 21
四、電路實現與量測結果 30
4-1實驗儀器與環境介紹 30
4-2 量測結果 33
五、結論 46
參考文獻 47

參考文獻

[1]MOSFET的半橋驅動電路設計要領詳解。2021年2月14日，取自https://ppfocus.com/0/hu8f5728e.html
[2]Mohan. Undeland. Robbins, "Power Electronics: Converters, Applications, and Design," Third Edition
[3]Mohan. Undeland. Robbins,電力電子學，江炫樟譯，第三版，全華圖書，新竹市，2012/05。
[4]電路圖與印刷電路板設計，取自http://aries.dyu.edu.tw/~thhu/EC_LAB/PCB_1.pdf
[5]消除Buck轉換器中的EMI問題，取自https://www.richtek.com/Design%20Support/Technical%20Document/AN045?sc_lang=zh-TW
[6] Y. Li, C. Wen, B. Yuan, L. Wen and Q. Ye, "A high speed and power-efficient level shifter for high voltage buck converter drivers," 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2010, pp. 309-311, [7]Nisha and Rajesh Mehra. “High Speed Level Shifter Design for Low Power Applications Using 45 nm.” (2016).
[8] F. Yang, C. Wang, H. Lam, Q. Zhao, J. Fan and S. Zhang, "A floating high-voltage level shifter used in a pre-charge circuit for large-size AMOLED displays," 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2016, pp. 267-270
[9] T. Lehmann, "Design of Fast Low-power Floating High-voltage Level-shifters", Electronics Letters, vol. 50, no. 3, pp. 202-204, 2014.
[10] Y. Moghe, T. Lehmann and T. Piessens, "Nanosecond Delay Floating High Voltage Level Shifters in a 0.35 $mu$m HV-CMOS Technology," in IEEE Journal of Solid-State Circuits, vol. 46, no. 2, pp. 485-497, Feb. 2011
[11] D. Liu, S. J. Hollis and B. H. Stark, "A new circuit topology for floating High Voltage level shifters," 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2014, pp. 1-4
[12] S. C. Tan and X. W. Sun, "Low power CMOS level shifters by bootstrapping technique", IEEE Electron. Lett., vol. 38, no. 16, pp. 876-878, Aug. 2002.
[13] J. Chen and L. He, "Fully Integrated High-Voltage Level Shifts and Drivers for Buck Converters," 2018 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), 2018, pp. 489-492
[14] D. Pan, H. W. Li and B. M. Wilamowski, "A low voltage to high voltage level shifter circuit for MEMS application," Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium (Cat. No.03CH37488), 2003, pp. 128-131
[15] J. F. da Rocha, M. B. dos Santos, J. M. Dores Costa and F. A. Lima, "Level Shifters and DCVSL for a Low-Voltage CMOS 4.2-V Buck Converter," in IEEE Transactions on Industrial Electronics, vol. 55, no. 9, pp. 3315-3323, Sept. 2008
[16] Sanjaya Maniktala , “Switching Power Supplies A to Z”

指導教授

夏勤陳竹一(Chin Hsia Jwu-E Chen)

審核日期

2022-5-23

推文