原子級平整SrTiO3(100)表面製備過程中之表面重構、表面形貌以及表面元素組成之變化

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姓名

陳則元(Tse-Yuan Chen) 查詢紙本館藏

畢業系所

物理學系

論文名稱

原子級平整SrTiO3(100)表面製備過程中之表面重構、表面形貌以及表面元素組成之變化

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摘要(中)

在本論文中，我們使用了去離子水清洗以及在大氣下進行熱處理的方式，得到了原子級平坦的SrTiO3(100)單晶基底。並且透過低能電子繞射、歐傑電子能譜術、X光光電子能譜術以及掃描穿隧式電子顯微鏡量測其表面重構、元素組成以及表面形貌在整個處理過程中所發生的變化。在經歷過兩次的熱處理以及一次的去離子水清潔過後，SrTiO3(100)單晶的表面重構由最初的(1×1)轉變為c(6×2)的結構。其表面原本所存在的碳元素等汙染皆顯著減少，並且可以看到其表面形貌十分的平整，然而表面的c(6×2)結構上方覆蓋著尺寸約2-3奈米的團簇。除此之外，我們在此樣品上嘗試進行鉍的蒸鍍以及使用離子濺射的清潔方式，發現在經過蒸鍍、濺射之後可以透過再次重複熱處理及去離子水的清潔流程使樣品表面回復c(6×2)的結構。

摘要(英)

In this thesis, we produce an atomically flat single crystal surface by deionized water etching and thermal treatment under atmosphere. We use Low Energy Electron Diffraction (LEED), Auger Electron Spectroscopy (AES), X-ray Photoelectron Spectroscopy (XPS) and Scanning Tunneling Microscopy (STM) to study the evolution of the surface reconstruction, surface composition and the surface topography during the cleaning process.
After two heat treatments and one deionized water etching, the surface reconstruction of SrTiO3(100) single crystal is changed from (1×1) to c(6×2). The carbon and other contaminates on the surface are reduced significantly, and the surface topography can be seen atomically flat. However, the c(6×2) structure on the surface is covered with clusters of about 2-3 nanometers in size. In addition, we tried to evaporate bismuth on this sample and try to clean it by argon ion sputtering. We found that after the evaporation and sputtering, the surface of the sample can be restored to the c(6×2) structure by repeating the heat treatment and deionized water cleaning process.

關鍵字(中)

★ 鈦酸鍶
★ SrTiO3
★ 表面重構
★ 表面形貌
★ 元素組成

關鍵字(英)

論文目次

摘要 i
Abstract ii
誌謝 iii
目錄 iv
圖目錄 vii
1 簡介 1
2 文獻回顧 3
2.1 鈦酸鍶(STO)簡介 3
2.1.1 鈣鈦礦 3
2.1.2 STO晶體結構 3
2.1.3 STO晶體相變 3
2.1.4 STO表面重構 4
2.1.5 STO摻雜 4
2.2 STO清潔方式 4
2.2.1 氫氟酸蝕刻 5
2.2.2 酸蝕刻 5
2.2.3 去離子水清洗及熱處理 6
3 實驗儀器與原理 13
3.1 超高真空系統 13
3.1.1 機械幫浦 14
3.1.2 分子渦輪幫浦 14
3.1.3 鈦昇華幫浦 15
3.1.4 離子幫浦 15
3.1.5 機械式真空計 15
3.1.6 熱絲離子真空計(hot filament ionization gauge) 16
3.1.7 冷陰極離子真空計(cold cathode ionization gauge) 16
3.1.8 對流式真空計(convection gauge) 16
3.2 腔體設計及樣品處理 17
3.2.1 傳送腔(loadlock) 17
3.2.2 腔體烘烤(baking) 17
3.2.3 離子濺射槍 18
3.2.4 蒸鍍槍 18
3.2.5 高溫爐 19
3.2.6 樣品清潔、傳送及加熱 19
3.3 量測技術及原理 21
3.3.1 電子平均自由徑(mean free path) 21
3.3.2 低能電子繞射(Low Energy Electron Diffraction, LEED) 21
3.3.3 歐傑電子能譜術(Auger Electron Spectroscopy, AES) 23
3.3.4 X光光電子能譜術(X-ray photoelectron spectroscopy, XPS) 24
3.3.5 同步輻射光源 25
3.3.6 掃描穿隧式電子顯微鏡( Scanning Tunneling Microscopy, STM) 26
4 實驗結果與討論 41
4.1 去離子水清洗及熱處理 41
4.1.1 樣品初始狀況 41
4.1.2 低能量電子繞射結果 42
4.1.3 歐傑電子能譜結果 43
4.1.4 X光光電子能譜結果 44
4.1.5 掃描穿隧式電子顯微鏡結果 45
4.2 多次清潔流程下樣品之變化 45
4.3 重複利用性 46
4.4 純氧環境加熱 46
4.5 清潔流程中樣品變化之討論 47
5 結論 62
6 參考資料 63

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指導教授

陸大安(Dah-An Luh)

審核日期

2021-9-2

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