高功率脈衝磁控濺鍍氧化銦鎵鋅薄膜於軟性基板之研究

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姓名

尤叡婕(Ruei-Jie You) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

高功率脈衝磁控濺鍍氧化銦鎵鋅薄膜於軟性基板之研究
(IGZO thin films on the flexible substrate by using high power impulse magnetron sputtering deposition)

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至系統瀏覽論文 (2027-9-30以後開放)

摘要(中)

近年來非晶氧化物半導體(amorphous oxide semiconductor, AOS)被應用於薄膜電晶體(thin film transistor, TFT)的通道層，與非晶矽a-Si、低溫多晶矽(Low Temperature Poly-silicon, LTPS)相比，AOS具有高遷移率、低漏電流、均勻性和適合低溫製程等優勢，其中AOS又以IGZO為值得關注的議題，其原為透明導電氧化物(transparent conductive oxide, TCO)配置的，因此擁有高穿透率與高導電性特性，更具有商業價值。
本論文的實驗分成兩部分，分別探討IGZO薄膜製程和軟性基板之影響，並利用新穎的高功率脈衝磁控濺鍍來製程IGZO，能擁有高緻密性、附著力以及能於低溫製程下製程，對於未來用應於軟性基板有很大的奉獻。第一部分利用霍爾量測儀分析薄膜電性，施加負基板偏壓可提升電性，加入適量的氧氣流量提升遷移率；第二部分，濺鍍IGZO於軟性基板，利用彎曲測試，於不同直徑和張應力以及壓應力之電性比較，直徑越大對薄膜影響越小，且張應力對於薄膜影響並不大。最後，我們成功製作出IGZO於軟性基板，並透過彎曲測試，觀察薄膜對張應力與壓應力之比較，壓應力對薄膜影響更大。

摘要(英)

In recent years, amorphous oxide semiconductor (AOS) has been applied to the channel layer of thin film transistor (TFT). Compared with amorphous silicon (a-Si) and low temperature poly silicon (LTPS), AOS has the advantages of high mobility, low leakage current, uniformity, suitability, and in low-temperature processes. Among them, IGZO is worthy of attention in AOS. In the beginning, IGZO has been applied for transparent conductive oxide (TCO) with high transmittance and high conductivity, which is a commercially valuable material.
This research is divided into two parts, the influence of IGZO thin film process and the fabrication of IGZO on flexible substrates, respectively. A high power pulsed magnetron sputtering (HiPIMS) has been applied to fabricate IGZO and achieved high density, adhesion and under low temperature process on flexible substrates. We used HALL measurement to analyze the electrical properties of the films and found when the negative substrate bias was applied in the process, the electrical properties of the films can be improved and a few oxygen can also improve the mobility. Then, we used HiPIMS to fabricate IGZO on flexible substrates and bending tests, to measure tensile stress and compressive stress under different bending diameters. Comparing the electrical properties under different bending diameters, we can found the larger the diameter, the smaller the effect on the films. The tensile stress has only small influence for the films. Finally, it shows the IGZO has been fabricated on the flexible substrates successfully and the bending test shows the influence of the compressive stress is higher than tensile stress.

關鍵字(中)

★ 高功率脈衝磁控濺鍍
★ 氧化銦鎵鋅
★ 軟性基板

關鍵字(英)

★ HiPIMS
★ IGZO
★ flexible substrate

論文目次

摘要 i
Abstract ii
致謝 iii
目錄 v
圖目錄 vii
表目錄 x
第一章緒論 1
1-1 前言 1
1-2 研究動機 3
第二章基礎理論與文獻回顧 6
2-1 透明導電膜(Transparent conducting oxide, TCO) 6
2-2 氧化銦鎵鋅(indium gallium zinc oxide, IGZO) 7
2-2-1 IGZO簡介 7
2-2-2 IGZO文獻回顧 9
2-3 濺鍍原理 10
2-4 高功率脈衝磁控濺鍍系統 12
第三章實驗架構與量測儀器 15
3-1 實驗架構 15
3-1-1 薄膜製程流程 15
3-2 製程設備 17
3-2-1 濺鍍系統 17
3-2-2 高功率脈衝磁控濺鍍(HiPIMS)系統 18
3-2-3 外加電壓 19
3-3 量測儀器 20
3-3-1 UV-VIS-NIR分光光譜儀 20
3-3-2 霍爾量測儀(Hall measurement) 21
3-3-3 彎曲計數器 23
第四章實驗結果與討論 25
4-1 a-IGZO薄膜製程 25
4-1-1 儲能時間對IGZO薄膜之影響 25
4-1-2 基板偏壓對IGZO薄膜之影響 28
4-1-3 氧氣流量對IGZO薄膜之影響 31
4-2 軟性基板 34
4-2-1 不同厚度PET 35
4-2-2 不同厚度PET薄膜之彎曲測試比較 37
4-2-3 無色聚醯亞胺(Colorless Polyimide；CPI) 55
4-2-4 CPI薄膜之彎曲測試比較 56
第五章結論與未來研究 66
5-1 結論 66
5-2 未來展望 67
參考文獻 68

參考文獻

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指導教授

陳昇暉(Sheng-Hui Chen)

審核日期

2022-8-31

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