以深冷電化學蝕刻法在矽晶表面形成微結構與光致發光光譜之研究

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姓名

李文碩(Li, Wen-Shuo) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

以深冷電化學蝕刻法在矽晶表面形成微結構與光致發光光譜之研究
(Fabrication of Surface Microstructure and Photoluminescence of Cryogenic Electrochemical Etching Silicon)

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摘要(中)

本研究為使用氫氟酸:酒精比例1:1在兩組電流下超低溫電化學蝕刻P型重參矽晶圓，觀察低溫對表面微結構與表面奈米晶體尺寸的影響。並使用場發射掃描式電子顯微鏡(SEM)、穿透式電子顯微鏡(TEM)、光致發光光譜儀(PL)做進一步分析。低溫下因水的解離率與反應速率降低導致矽之氟蝕刻與氫氧基蝕刻被降至很低，厄弗法則解釋蝕刻液的表面張力增加導致應力腐蝕，重參P型矽卻不會因溫度降低改變電導率，三種原因導致蝕刻出的矽晶表面多孔結構相較於常溫孔洞更淺並趨於球型，奈米晶體也因尺寸縮小致使光致發光光譜發生藍移現象。
相較於常見的化學氣相沉積法與電漿沉積法，低溫電化學蝕刻法有設備相對簡單、成本低廉等的優點，較適合大規模應用於生物標記與防偽辨識。

摘要(英)

We adopt the cryogenic electrochemical method to etch heavily-doped p-type silicon wafer under two sets of current with the etchant that mix hydrofluoric acid and ethanol with 1:1 volume percentage, then observe the influence of low temperature to surface microstructure and size of surface nanocrystal using field-emission scanning electron microscope(SEM)、transmission electron microscope(TEM) and photoluminescence(PL). There are three reasons which make the surface porous structure more shallow and more spherical in deep cold environment: 1. The reaction rate and dissociation rate decrease lead to a low etch rate. 2. The surface tension increase lead to stress corrosion. 3. The conductivity of heavily-doped silicon remains almost the same in the cryogenic environment. The low temperature also causes blue shift in the PL, which can be attributed to the size decrease of nanoparticles of silicon.
In comparison with Chemical Vapor Deposition(CVD) and Plasma Synthesis, the cryogenic electrochemical etching has the advantage of simple equipment and inexpensive cost. That makes it suitable for biomarker and banknotes anti-counterfeiting.

關鍵字(中)

★ 電化學蝕刻
★ 光致發光
★ 深冷
★ 多孔矽

關鍵字(英)

★ electrochemical etching
★ photoluminescence
★ deep cold
★ porous silicon

論文目次

目錄
摘要 i
Abstract ii
誌謝 iii
目錄 iv
圖目錄 vii
表目錄 x
第一章緒論 1
1-1 研究背景 1
1-2 奈米矽晶製程 2
1-2-1 化學氣相沉積法(Chemical Vapor Deposition, CVD): 4
1-2-2 電漿沉積法(Plasma Synthesis): 4
1-2-3 電化學蝕刻法(Electrochemical Etching): 4
1-3 研究動機與目的 5
第二章原理與文獻回顧 6
2-1 多孔矽理論模型 6
2-2 多孔矽形成機制 6
2-3 表面張力 11
2-4 溫度對蝕刻液的物理影響-厄弗法則(Eötvös law) 11
2-5 溫度對蝕刻液的化學影響 12
2-6 溫度對半導體內部的影響 13
第三章實驗方法與步驟 16
3-1 試片與清洗流程 16
3-2 實驗器材 17
3-2-1 電化學實驗器材 17
3-2-2實驗分析檢測儀器 18
3-3 實驗步驟 19
第四章結果與討論 21
4-1日光燈及UV燈下觀察結果 21
4-1-1 100mA電流結果 21
4-1-2 300mA電流結果 23
4-2 FE-SEM表面及剖面觀察結果 25
4-3 TEM觀察結果 34
4-4 多孔矽光激發光譜(Photoluminescence, PL) 35
4-4-1 PL波長變化 35
4-4-2 晶粒尺寸變化 44
第五章結論 47
5-1 結果歸納 47
5-2 未來展望 47
第六章參考文獻 48

參考文獻

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指導教授

李天錫(Lee, Benjamin Tien-Hsi)

審核日期

2021-6-21

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