|| Q. G. Q. Guo and A. Y. A. Yoshida, "Temperature dependence of band gap change in InN and AlN," Japanese Journal of Applied Physics, vol. 33, no. 5R, p. 2453, 1994.|
 P. Vissutipitukul and T. Aizawa, "Wear of plasma-nitrided aluminum alloys," Wear, vol. 259, no. 1-6, pp. 482-489, 2005.
 b. H. Morkoc, S. Strite, G. Gao, M. Lin, B. Sverdlov, and M. Burns, "Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies," Journal of Applied physics, vol. 76, no. 3, pp. 1363-1398, 1994.
 H. Altun and S. Sen, "The effect of DC magnetron sputtering AlN coatings on the corrosion behaviour of magnesium alloys," Surface and Coatings Technology, vol. 197, no. 2-3, pp. 193-200, 2005.
 J.-Y. Qiu, Y. Hotta, K. Watari, K. Mitsuishi, and M. Yamazaki, "Low-temperature sintering behavior of the nano-sized AlN powder achieved by super-fine grinding mill with Y2O3 and CaO additives," Journal of the European Ceramic Society, vol. 26, no. 4-5, pp. 385-390, 2006.
 M. Ishihara, K. Yamamoto, F. Kokai, and Y. Koga, "Effect of laser wavelength for surface morphology of aluminum nitride thin films by nitrogen radical-assisted pulsed laser deposition," Japanese Journal of Applied Physics, vol. 40, no. 4R, p. 2413, 2001.
 X. Wang and A. Yoshikawa, "Molecular beam epitaxy growth of GaN, AlN and InN," Progress in crystal growth and characterization of materials, vol. 48, pp. 42-103, 2004.
 H.-H. Lo, W.-L. Chen, P. J. Wang, W. Lai, Y.-K. Fuh, and T. T. Li, "Residual stress classification of pulsed DC reactive sputtered aluminum nitride film via large-scale data analysis of optical emission spectroscopy," The International Journal of Advanced Manufacturing Technology, vol. 119, no. 11, pp. 7449-7462, 2022.
 M. Auger, L. Vazquez, M. Jergel, O. Sanchez, and J. Albella, "Structure and morphology evolution of ALN films grown by DC sputtering," Surface and Coatings Technology, vol. 180, pp. 140-144, 2004.
 T.-Y. Lu et al., "Minimizing film residual stress with in situ OES big data using principal component analysis of deposited AlN films by pulsed DC reactive sputtering," The International Journal of Advanced Manufacturing Technology, vol. 114, no. 7, pp. 1975-1990, 2021.
 I. Oliveira, K. Grigorov, H. Maciel, M. Massi, and C. Otani, "High textured AlN thin films grown by RF magnetron sputtering; composition, structure, morphology and hardness," Vacuum, vol. 75, no. 4, pp. 331-338, 2004.
 P. J. Kelly and R. D. Arnell, "Magnetron sputtering: a review of recent developments and applications," Vacuum, vol. 56, no. 3, pp. 159-172, 2000.
 W. Sproul, "High-rate reactive DC magnetron sputtering of oxide and nitride superlattice coatings," Vacuum, vol. 51, no. 4, pp. 641-646, 1998.
 M.-H. Park and S.-H. Kim, "Thermal conductivity of AlN thin films deposited by RF magnetron sputtering," Materials Science in Semiconductor Processing, vol. 15, no. 1, pp. 6-10, 2012.
 H. Mehner, S. Leopold, and M. Hoffmann, "Variation of the intrinsic stress gradient in thin aluminum nitride films," Journal of Micromechanics and Microengineering, vol. 23, no. 9, p. 095030, 2013.
 K. E. Knisely, B. Hunt, B. Troelsen, E. Douglas, B. A. Griffin, and J. E. Stevens, "Method for controlling stress gradients in PVD aluminum nitride," Journal of Micromechanics and Microengineering, vol. 28, no. 11, p. 115009, 2018.
 B. Riah et al., "Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si (111) Using a AlN Buffer Layer," Coatings, vol. 11, no. 9, p. 1063, 2021.
 P. Soussan, K. O′Donnell, J. D′Haen, G. Vanhoyland, E. Beyne, and H. A. Tilmans, "Pulsed dc sputtered aluminum nitride: A novel approach to control stress and c-axis orientation," MRS Online Proceedings Library (OPL), vol. 833, 2004.
 S. Xiao, R. Suzuki, H. Miyake, S. Harada, and T. Ujihara, "Improvement mechanism of sputtered AlN films by high-temperature annealing," Journal of Crystal Growth, vol. 502, pp. 41-44, 2018.
 B. W. Sheldon, K. Lau, and A. Rajamani, "Intrinsic stress, island coalescence, and surface roughness during the growth of polycrystalline films," Journal of Applied Physics, vol. 90, no. 10, pp. 5097-5103, 2001.
 H.-Y. Shih et al., "Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing," Scientific reports, vol. 7, no. 1, pp. 1-8, 2017.
 S. Joe Qin, "Statistical process monitoring: basics and beyond," Journal of Chemometrics: A Journal of the Chemometrics Society, vol. 17, no. 8‐9, pp. 480-502, 2003.
 S. J. Hong, G. S. May, and D.-C. Park, "Neural network modeling of reactive ion etching using optical emission spectroscopy data," IEEE Transactions on Semiconductor Manufacturing, vol. 16, no. 4, pp. 598-608, 2003.
 X. Jia, C. Jin, M. Buzza, W. Wang, and J. Lee, "Wind turbine performance degradation assessment based on a novel similarity metric for machine performance curves," Renewable Energy, vol. 99, pp. 1191-1201, 2016.
 S.-H. Wang, H.-E. Chang, C.-C. Lee, Y.-K. Fuh, and T. T. Li, "Evolution of a-Si: H to nc-Si: H transition of hydrogenated silicon films deposited by trichlorosilane using principle component analysis of optical emission spectroscopy," Materials Chemistry and Physics, vol. 240, p. 122186, 2020.
 K. Tan and S. Chen, "Adaptively weighted sub-pattern PCA for face recognition," Neurocomputing, vol. 64, pp. 505-511, 2005.
 蕭宏, 半導體製程技術導論. 新北市: 全華圖書, 2019.
 莊達人, VLSI製造技術. 新北市: 高立圖書有限公司, 1996.
 H. Okano, N. Tanaka, Y. Takahashi, T. Tanaka, K. Shibata, and S. Nakano, "Preparation of aluminum nitride thin films by reactive sputtering and their applications to GHz‐band surface acoustic wave devices," Applied physics letters, vol. 64, no. 2, pp. 166-168, 1994.
 J. Lopez, W. Zhu, A. Freilich, A. Belkind, and K. Becker, "Time-resolved optical emission spectroscopy of pulsed DC magnetron sputtering plasmas," Journal of Physics D: Applied Physics, vol. 38, no. 11, p. 1769, 2005.
 A. Schutze, J. Y. Jeong, S. E. Babayan, J. Park, G. S. Selwyn, and R. F. Hicks, "The atmospheric-pressure plasma jet: a review and comparison to other plasma sources," IEEE transactions on plasma science, vol. 26, no. 6, pp. 1685-1694, 1998.
 P. Pobedinskas et al., "Thickness dependent residual stress in sputtered AlN thin films," Thin Solid Films, vol. 522, pp. 180-185, 2012.
 G. Abadias et al., "Stress in thin films and coatings: Current status, challenges, and prospects," Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 36, no. 2, p. 020801, 2018.
 K. Pearson, "LIII. On lines and planes of closest fit to systems of points in space," The London, Edinburgh, and Dublin philosophical magazine and journal of science, vol. 2, no. 11, pp. 559-572, 1901.
 H. Hotelling, "Analysis of a complex of statistical variables into principal components," Journal of educational psychology, vol. 24, no. 6, p. 417, 1933.
 B. Chapman and J. Vossen, "Glow discharge processes: sputtering and plasma etching," Physics Today, vol. 34, no. 7, p. 62, 1981.
 Q. Luo and A. Jones, "High-precision determination of residual stress of polycrystalline coatings using optimised XRD-sin2ψ technique," Surface and Coatings Technology, vol. 205, no. 5, pp. 1403-1408, 2010.
 K. A. Aissa, A. Achour, J. Camus, L. Le Brizoual, P.-Y. Jouan, and M.-A. Djouadi, "Comparison of the structural properties and residual stress of AlN films deposited by dc magnetron sputtering and high power impulse magnetron sputtering at different working pressures," Thin Solid Films, vol. 550, pp. 264-267, 2014.
 X. Shi, W. Qing, T. Marhaba, and W. Zhang, "Atomic force microscopy-Scanning electrochemical microscopy (AFM-SECM) for nanoscale topographical and electrochemical characterization: Principles, applications and perspectives," Electrochimica Acta, vol. 332, p. 135472, 2020.
 M. Noorprajuda, M. Ohtsuka, and H. Fukuyama, "Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering," AIP Advances, vol. 8, no. 4, p. 045124, 2018.
 P. Kelly, P. Henderson, R. Arnell, G. Roche, and D. Carter, "Reactive pulsed magnetron sputtering process for alumina films," Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 18, no. 6, pp. 2890-2896, 2000.
 H. Liu, G. Tang, F. Zeng, and F. Pan, "Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature," Journal of crystal growth, vol. 363, pp. 80-85, 2013.
 J. Zhang et al., "Growth of AlN films on Si (100) and Si (111) substrates by reactive magnetron sputtering," Surface and Coatings Technology, vol. 198, no. 1-3, pp. 68-73, 2005.
 H.-C. Lee, J.-Y. Lee, and H.-J. Ahn, "Effect of the substrate bias voltage on the crystallographic orientation of reactively sputtered AlN thin films," Thin Solid Films, vol. 251, no. 2, pp. 136-140, 1994.
 Z. Xin, S. Xiao-Hui, and Z. Dian-Lin, "Thickness dependence of grain size and surface roughness for dc magnetron sputtered Au films," Chinese Physics B, vol. 19, no. 8, p. 086802, 2010.
 F. Martin, P. Muralt, M.-A. Dubois, and A. Pezous, "Thickness dependence of the properties of highly c-axis textured AlN thin films," Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 22, no. 2, pp. 361-365, 2004.
 A. E. Giba, P. Pigeat, S. Bruyère, T. Easwarakhanthan, F. Mücklich, and D. Horwat, "Controlling refractive index in AlN films by texture and crystallinity manipulation," Thin Solid Films, vol. 636, pp. 537-545, 2017.
 J. Kar, G. Bose, and S. Tuli, "Influence of rapid thermal annealing on morphological and electrical properties of RF sputtered AlN films," Materials science in semiconductor processing, vol. 8, no. 6, pp. 646-651, 2005.
 Y.-P. Yang et al., "Machine Learning Assisted Classification of Aluminum Nitride Thin Film Stress via In-Situ Optical Emission Spectroscopy Data," Materials, vol. 14, no. 16, p. 4445, 2021.
 H. C. Barshilia, B. Deepthi, and K. Rajam, "Growth and characterization of aluminum nitride coatings prepared by pulsed-direct current reactive unbalanced magnetron sputtering," Thin Solid Films, vol. 516, no. 12, pp. 4168-4174, 2008.
 R. Chodun, K. Nowakowska-Langier, and K. Zdunek, "Methods of optimization of reactive sputtering conditions of Al target during AlN films deposition," Materials Science-Poland, vol. 33, no. 4, pp. 894-901, 2015.
 H.-C. Lee and J.-Y. Lee, "Effect of negative bias voltage on the microstructures of AlN thin films fabricated by reactive rf magnetron sputtering," Journal of Materials Science: Materials in Electronics, vol. 8, no. 6, pp. 385-390, 1997.
 J. Aveyard et al., "Linker-free covalent immobilization of nisin using atmospheric pressure plasma induced grafting," Journal of Materials Chemistry B, vol. 5, no. 13, pp. 2500-2510, 2017.
 J. Lee, "Measurement of machine performance degradation using a neural network model," Computers in Industry, vol. 30, no. 3, pp. 193-209, 1996.
 L. Puggini and S. McLoone, "An enhanced variable selection and Isolation Forest based methodology for anomaly detection with OES data," Engineering Applications of Artificial Intelligence, vol. 67, pp. 126-135, 2018.