運用雙電極設計增強高速資料傳輸表現的單模 垂直共振腔面射型雷射小型陣列

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趙元晟(Yuan-Cheng Zhao) 查詢紙本館藏

畢業系所

電機工程學系

論文名稱

運用雙電極設計增強高速資料傳輸表現的單模垂直共振腔面射型雷射小型陣列
(Dual Electrodes Design for the Enhancement of High-Speed Data Transmission in Single-Mode Vertical-Cavity Surface-Emitting Laser Mini Arrays)

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摘要(中)

本論文中，我們運用鋅擴散以及特殊的電極設計，有效改善類單模態(QSM)垂直共振腔面射型雷射(VCSEL)陣列的速度以及資料傳輸。我們在緊密的2X2 VCSEL陣列中加入兩個電極，其中一邊為直流注入，另一邊為較大的交流訊號調變。與單電極的2X2 VCSEL陣列相比，雙電極的VCSEL陣列在相同的總電流注入下(20mA)，電光頻率響應有較大的阻尼以及較寬的頻寬(19 vs. 15G)。由此我們可以發現，雙電極可以改善元件在高速資料傳輸中的表現。
除此之外，元件還能夠擁有較大的光功率輸出(17mW@20mA)、維持類高斯遠場分布以及具有窄的發散角(半高寬(FWHM):10 o@20mA)。由此得知，本輪文提出雙電極設計在大幅提升元件動態表現時也沒有造成靜態表現的損失。
我們觀察雙電極與單電極總電流都為20mA的情況下，眼圖的品質達到大幅的改善。在32 Gbit/sec直接對接(back-to-back)資料傳輸中可以發現巨大的進步(jitter:1.5 vs2.8 ps)。不僅如此，在傳輸距離為500m進行眼圖的量測時，雙電極依然能夠維持25 Gbit/sec的眼圖品質，而單電極已經無法維持眼圖張開。
接著我們更進一步將啞鈴結構搭配雙電極設計提升至7x7陣列。不論是在靜態以及動態上都有明顯的改善在。在靜態表現上，雙電極設計能夠擁有更大的光功率輸出(47 vs. 33mW)，並具有高斯遠場分佈以及擁有更窄的發散角(FWHM: 6.7o vs. 7.7 o)。在動態表現上，雙電極設計有更大的阻尼以及更寬的頻率響應(11 vs. 9GHz)，這也使得雙電極在眼圖品質上有很大的進步(Jitter: 4.9 vs.5.8ps) 。因此我們可以推斷雙電極設計不僅可以用在小型陣列，也能在更大的陣列中展現出它的優勢。

摘要(英)

In this work, a novel design for the electrodes in a qusi-single-mode (QSM) vertical-cavity surface-emitting laser (VCSEL) array with Zn-diffusion apertures inside is demonstrated to produce an effective improvement in the high-speed data transmission performance. By separating the electrodes in a compact 2×2 coupled QSM VCSEL array into two parts, one for pure dc current injection and the other for large ac signal modulation, a significant enhancement in the high-speed data transmission performance can be observed. Compared with the single electrode reference, which parallels 4 VCSEL units in the array, the demonstrated array with its separated electrode design exhibits greater dampening of electrical-optical (E-O) frequency response and a larger 3-dB E-O bandwidth (19 vs. 15 GHz) under the same amount of total bias current (20 mA). Moreover, this significant improvement in dynamic performance does not come at the cost of any degradation in the static performance in terms of the maximum QSM optical output power (17 mW @ 20 mA) and the Gaussian-like optical far-field pattern which has a narrow divergence angle (full-width half maximum (FWHM): 10o at 20 mA). The advantages of the separated electrode design lead to a much better quality of 32 Gbit/sec eye-opening as compared to that of the reference device (jitter: 1.5 vs. 2.8 ps) and error-free 25 Gbit/sec transmissions over a 500 m multi-mode fiber has been achieved under a moderate total bias current of 20 mA. Finally, we increased the number of emitters in our dumb-bell structure mesas having dual electrode to 7×7 array, we can still observe some significant improvement in its static and dynamic performances. With respect to static performance, the optical output power has significant improvement (47mW vs. 32mW) and far-field pattern has narrower divergence angle (FWHM: 6.7 o vs. 7.7 o). Regarding with dynamic performance, more dampened and wider E-O frequency response (11 vs. 9GHz) having better eye-pattern quality (jitter: 4.9 vs. 5.8ps) can be observed. From these we can conclude that our novel design for the electrodes can be applicable for both small and large scale arrays.

關鍵字(中)

★ 垂直共振腔面射型雷射
★ 凸台
★ 空間電洞不足效應
★ 滾落

關鍵字(英)

★ VCSEL
★ Mesa
★ spatial hole burning effect
★ roll-off

論文目次

目錄
摘要 I
Abstract III
致謝 V
Acknowledgement VII
目錄 VIII
圖目錄 XII
表目錄 XIX
第一章序論 1
1-1 簡介 1
1-2 光無線通訊及通訊衛星 3
1-3 資料中心 7
1-4 垂直共振腔面射型雷射(VCSEL) 簡介 9
1-5 面射型雷射的電流侷限 11
1-6 VCSEL之氧化層結構 13
1-7 水氧氧化系統 15
1-7-1 VCSEL濕氧化原理 16
1-7-2 氧化層掏離製程 19
1-7-3 IR CCD系統 21
第二章元件結構設計 22
2-1 高亮度VCSEL陣列 22
2-1-1 提升元件功率 22
2-1-2 縮小元件發散角 23
2-1-3 縮小元件發光面積 27
2-2 850 nm波段VCSEL晶片磊晶結構 28
2-3 VCSEL元件結構設計 31
第三章實驗流程 32
3-1 鋅擴散 (Zn diffusion) 32
3-2 水氧氧化製程 37
3-3 製作電極 (P Metal 和 N Metal) 42
3-4 BCB(Benzocyclobutene)製程 45
3-5 開洞(Via opening) 47
3-6 PAD金屬 49
第四章實驗結果及探討 50
4-1 量測系統簡介 50
4-1-1 電流對電壓(I-V)的量測 50
4-1-2 光功率對電流(L-I)之量測 51
4-1-3 遠場(FFP Far Field Pattern)量測系統 51
4-1-4 近場(NFP Near Field Pattern)量測系統 52
4-1-5 頻譜(Spectrum)之量測系統 52
4-1-6 頻寬(Bandwidth)之量測系統 53
4-1-7 眼圖(Eye Pattern)量測系統 54
4-2 IET 850nm波段VCSEL陣列結構圖 56
4-2-1 光功率-電流-電壓(L-I-V)曲線比較 59
4-2-2 頻譜(Spectrum)比較 62
4-2-3 遠場發散角(Far Field Pattern, FFP)量測 63
4-2-4 E-O頻寬量測 64
4-2-5 近場(Near Field Pattern)量測 65
4-2-6 眼圖(Eye Pattern)量測 66
4-3 單模2x2 VCSEL陣列雙電極與單電極量測比較 68
4-3-1 光功率-電流-電壓(L-I-V)曲線比較 68
4-3-2 頻譜(Spectrum)比較 69
4-3-3 E-O頻寬比較 70
4-3-4 眼圖(Eye Pattern)量測比較 70
4-4 啞鈴結構7×7 VCSEL陣列雙電極與單電極量測比較 72
4-4-1 光功率-電流-電壓(L-I-V)曲線比較 72
4-4-2 頻譜(Spectrum)以及遠場(Far Field Pattern, FFP)量測比較 73
4-4-3 近場(Near Field Pattern, NFP)量測 74
4-4-4 頻率響應(E-O response)量測 75
4-4-5 眼圖(Eye pattern)量測 75
第五章結論及未來探討 77
第六章 Reference 79

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指導教授

許晉瑋(Jin-Wei Shi)

審核日期

2022-7-25

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