參考文獻 |
[1] Yan-Min Liao, "High-Performances Dual M-Layers Avalanche Photodiodes from Single-Photon Detection to High Saturation Output Power for LiDAR application," Master thesis, National Central University, Taiwan, July, 2021.
[2] https://www.eet-china.com/news/202011090939.html
[3] https://epcco.com/epc/Applications/Lidar.as.html
[4] https://www.ddcar.com.tw/article/26602.html
[5] https://www.novuslight.com/fmcw-the-future-of-lidar.html
[6] https://www.laserfocusworld.com/home/article/16556322/lasers-for- lidar-fmcw-lidar-an-alternative-for-selfdriving-cars.html
[7] M. Nada, Y. Yamada and H. Matsuzaki, "A High-Linearity Avalanche Photodiodes with a Dual-Carrier Injection Structure," IEEE Photon. Technol. Lett., vol. 29, no. 21, pp. 1828-1831, Nov., 2017.
[8] P. Runge, G. Zhou, T. Beckerwerth, F. Ganzer, S. Keyvaninia, S. Seifert, W. Ebert, S. Mutschall, A. Seeger, and M. Schell, "Waveguide Integrated Balanced Photodetectors for Coherent Receivers," IEEE J. Sel. Top. Quantum Electron., vol. 24, no. 2, pp. 1-7, April, 2018.
[9] https://www.ques10.com/p/19228/explain-the-basic-princple-of-operation-of-phot-1.html
[10] S. O. Kasap, "Optoelectronics and photonics: principles and practices," Prentice Hall, 2001.
[11] https://blog.xuite.net/jesonchung/scienceview/93552804.html
[12] B. Jalali, M. Paniccia G. Reed, "Silicon photonics," IEEE Photon. Technol. Lett., vol. 7, no. 12, pp. 4600-4615, June, 2006.
[13] S. Q. Yu, S. A. Ghetmiri, W. Du, J. Margetis, Y. Zhou, A. Mosleh, S. Al-Kabi, A. Nazzal, G. Sun, R.A. Soref, J. Tolle, B. Li, and H. A. Naseem, "Si based GeSn light emitter: mid-infrared device in Si photonics," Proc. SPIE, vol. 9367, Feb., 2015.
[14] Y. Q. Fang, W. Chen, T. H. Ao, C. Liu, L. Wang, X. J. Gao, J. Zhang, and J. W. Pan, "InGaAs/InP single-photon detectors with 60% detection efficiency at 1550 nm, " Rev. Sci. Instruments, vol. 91, pp. 083102, Aug., 2020.
[15] F. Ceccarelli, G. Acconcia, A. Gulinatti, M. Ghioni, I. Rech, and R. Osellame, "Recent advances and future perspectives of single-photon avalanche diodes for quantum photonics applications," Adv. Quantum Technol., vol. 4, no. 2, pp. 2000102, Dec., 2020.
[16] F. Signorelli, F. Telesca, E. Conca, A. D. Frera, A. Ruggeri, A. Giudice, and A. Tosi, "Low-Noise InGaAs/InP Single-Photon Avalanche Diodes for Fiber-Based and Free-Space Applications," IEEE J. Sel. Top. Quantum Electron., vol. 28, no. 2, pp. 3801310, April, 2022.
[17] A. Tosi, F. Acerbi, A. Dalla Mora, M. A. Itzler, and X. Jiang, "Active Area Uniformity of InGaAs/InP Single-Photon Avalanche Diodes," IEEE Photon. J., vol. 3, no. 1, pp. 30-41, Feb., 2011.
[18] J. Zhang, H. Wang, G. Zhang, K. H. Tan, S. Wicaksono, H. Xu, C. Wang, Y. Chen, Y. Liang, Charles C. W. Lim, S. F. Yoon, and X. Gong, "High-performance InGaAs/InAlAs single-photon avalanche diode with a triple-mesa structure for near-infrared photon detection," Opt. Lett., vol. 46, no.11, pp. 2670-2673, June, 2021.
[19] https://www.tiri.narl.org.tw/Files/Doc/Publication/InstTdy/212/0210
[20] D. A. Ramirez, M. M. Hayat, G. Karve, J. C. Campbell, S. N. Torres, Bahaa E. A. Saleh, and M. C. Teich, " Detection Efficiencies and Generalized Breakdown Probabilities for Nanosecond-Gated Near Infrared Single-Photon Avalanche Photodiodes," IEEE J. Sel. Top. Quantum Electron., vol. 42, no. 2, pp. 137-145, Mar., 2006.
[21] M. A. Saleh, M. M. Hayat, P. P. Sotirelis, A. L. Holmes, J. C. Campbell, Bahaa E. A. Saleh and M. C. Teich, "Impact-Ionization and Noise Characteristics of Thin III-V Avalanche Photodiodes," IEEE Trans. Electron Devices, vol. 48, no.12, pp. 2722-2731, Dec., 2001.
[22] http://impact-ionisation.group.shef.ac.uk/ionisation_coeff/InP/
[23] http://impact-ionisation.group.shef.ac.uk/ionisation_coeff/InAlAs/
[24] S. Lee, M. Winslow, C. H. Grein, S. H. Kodati, A. H. Jones, D. R. Fink, P. Das, M. M. Hayat, T. J. Ronningen, J. C. Campbell, and S. Krishna, "Engineering of impact ionization characteristics in In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes on InP substrate," Sci. Rep., vol. 10, pp. 16735, Oct., 2020.
[25] C. I. Dai, "Single-Photon Avalanche Photodiode Fabricated with Standard CMOS Technology," Master thesis, National Chiao Tung University, Taiwan, July, 2010.
[26] Y. Xiao, I. Bhat, and M. N. Abedin, "Performance dependences on multiplication layer thickness for InP/InGaAs avalanche photodiodes based on time domain modeling," Proc. SPIE, vol. 5881, Sep., 2005.
[27] http://www.film-top1.com/news-info.aspid_279.html
[28] M. Nada, Y. Muramoto, H. Yokoyama, T. Ishibashi, and H. Matsuzaki, “Triple-mesa Avalanche Photodiode with Inverted P-Down Structure for Reliability and Stability,” IEEE J. Lightw. Technol., vol. 32, no. 8, pp. 1543-1548, April, 2014.
[29] M. Nada, Y. Yamada, and H. Matsuzaki, “Responsivity-Bandwidth Limit of Avalanche Photodiodes: Toward Further Ethernet Systems,” IEEE J. Sel. Top. Quantum Electron., vol. 24, no. 2, pp. 3800811, April, 2018.
[30] J. C. Campbell, S. Demiguel, F. Ma, A. Beck, X. Guo, S. Wang, X. Zheng, X. Li, J. D. Beck, M. A. Kinch, A. Huntington, L. A. Coldren, J. Decobert, and N. Tscherptner, "Recent Advances in Avalanche Photodiodes," IEEE J. Sel. Top. Quantum Electron., vol. 10, no.2, pp. 777-787, Aug., 2004.
[31] A. Gallivanoni, I. Rech and M. Ghioni, "Progress in Quenching Circuits for Single Photon Avalanche Diodes," IEEE Trans. on Nucl. Sci., vol. 57, no. 6, pp. 3815-3826, Dec., 2010.
[32] M. Liu, C. Hu, X. Bai, X. Guo, J. C. Campbell, Z. Pan, and M. M. Tashima, "High-Performance InGaAs/InP Single-Photon Avalanche Photodiode," IEEE J. Sel. Top. Quantum Electron., vol. 13, no. 4, pp. 887-894, Aug., 2007.
[33] Y. Ma, Y. Zhang, Y. Gu, X. Chen, Y. Shi, W. Ji, S. Xi, B. Du, X. Li, H. Tang, Y. Li, and J. Fang, "Impact of etching on the surface leakage generation in mesa-type InGaAs/InAlAs avalanche photodetectors." Opt. Exp., vol. 24, no. 7, pp. 7823-7834, 2016.
[34] G. Karve, S. Wang, F. Ma, X. Li, and J. C. Campbell, "Origin of dark counts in In0.53Ga0.47As/In0.52Al0.48As avalanche photodiodes operated in Geiger mode,"Appl. Phys. Lett., vol. 86, pp. 063505, Feb., 2005.
[35] C. I. Dai, "Single-Photon Avalanche Photodiode Fabricated with Standard CMOS Technology," Master thesis, National Chiao Tung University, Taiwan, July, 2010.
[36] C. Niclass, M. Gersbach, R. Henderson, L. Grant, E. Charbon, “A Single Photon Avalanche Diode Implemented in 130-nm CMOS Technology,” IEEE J. Sel. Top. Quantum Electron., vol. 13, no. 4, pp. 863-869, Aug., 2007.
[37] Zheng-Ru Lee, "Characteristic of Single-Photon Avalanche Diode with Vertical and Lateral Structures," Master thesis, National Chiao Tung University, Taiwan, July, 2011.
[38] Y. S. Lee, Y. M. Liao, P. L. Wu, C. E. Chen, Y. J. Teng, Y. Y. Hung, J. W. Shi, "In0.52Al0.48As Based Single Photon Avalanche Diodes with Stepped E-field in Multiplication Layers and High Efficiency Beyond 60 %," IEEE J. Sel. Top. Quantum Electron., vol. 28, no. 2, pp. 3802107, April, 2022.
[39] L. C. Comandar, B. Frohlich, J. F. Dynes, A. W. Sharpe, M. Lucamarini, Z. L. Yuan, R. V. Penty, and A. J. Shields, “Gigahertz-gated InGaAs/InP single-photon detector with detection efficiency exceeding 55% at 1550 nm,” J. Appl. Phys., vol. 117, pp. 083109, Feb., 2015.
[40] A. Tosi, N. Calandri, M. Sanzaro, and F. Acerbi, “Low-noise, low-jitter, high detection efficiency InGaAs/InP single-photon avalanche diode,” IEEE J. Sel. Top. Quantum Electron., vol. 20, no. 6, pp. 3803406, Dec., 2014.
[41] Y. S. Lee, P. L. Wu, Naseem, Y. J. Chen, and J. W. Shi, “Neat temporal performance of InGaAs/InAlAs single photon avalanche diode with stepwise electric field in multiplication layers,” IEEE Access, vol. 9, pp. 32979-32985, 2021.
[42] M. Fujiwara and M. Sasaki, “Photon-number-resolving detection at a telecommunications wavelength with a charge-integration photon detector,” Opt. Lett., vol. 31, no. 6, pp. 691-693, Feb., 2006.
[43] J. Zhao, T. Milanese, F. Gramuglia, P. Keshavarzian, S. S. Tan, M. Tng, L. Lim, V. Dhulla, E. Quek, M. J. Lee and E. Charbon, “On Analog Silicon Photomultipliers in Standard 55-nm BCD Technology for LiDAR Applications,” IEEE J. Sel. Top. Quantum Electron., vol. 28, no. 5, pp. 3804010, Oct., 2022. |