博碩士論文 110222018 詳細資訊



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姓名 何維禎(Wei-Chen He)  查詢紙本館藏   畢業系所 物理學系
論文名稱 晶界對多晶石墨烯電性能的影響
(Influence of grain boundaries on electrical properties of polycrystalline graphene)
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摘要(中) 石墨烯擁有卓越的電性，在各種電子應用中成為有前途的材料。為了能夠大規模合成石墨烯，化學氣相沉積被視為最有效率的生產方式，但不可避免地產生多晶石墨烯並包含晶界。晶界被認為會降低電傳輸。然而，很少有系統的實驗來仔細探索晶界數量對石墨烯電學性能的影響。
本實驗利用化學氣相沉積方法生長單層多晶石墨烯，在不同的生長溫度（760 °C - 1000 °C）下產生的多晶石墨烯中的晶界數量可以通過使用後處理在實驗上可視化晶界來計算。通過拉曼光譜觀察多晶石墨烯晶格中的缺陷。利用微影製程、乾蝕刻及蒸鍍系統製作了Van der Pauw的幾何形狀，並進行Van der Pauw和電化學阻抗頻譜的電性量測。結果表明，多晶石墨烯的薄層電阻和遷移率與晶界數量有關，晶界數量的增加會阻礙電子在石墨烯中的運動，當晶界達到臨界數量，晶界的影響會變得很微小。而進一步通過穿透電子顯微鏡觀察和計算分形維度，發現晶界的不同型態也會影響電荷的累積，良好域間連通性的晶界對電性是有利的。
摘要(英) Graphene possesses excellent electrical properties and has become a promising material in various electronic applications. Chemical vapor deposition is considered the most efficient production method for large-scale graphene synthesis. However, it inevitably results in polycrystalline graphene with grain boundaries. Grain boundaries are believed to reduce electrical conductivity. Nevertheless, there have been few systematic experiments to carefully explore the impact of grain boundary quantity on the electrical performance of graphene.
In the experiment, monolayer polycrystalline graphene is grown using the chemical vapor deposition method. The quantity of grain boundaries in the polycrystalline graphene produced at different growth temperatures (760 °C - 1000 °C) was calculated by visualizing the grain boundaries using post-processing techniques. Defects in the graphene lattice were observed through Raman spectroscopy. Van der Pauw′s geometry was fabricated using photolithography, dry etching, and evaporation systems, enabling electrical measurements via Van der Pauw and electrochemical impedance spectroscopy. The results indicate that the sheet resistance and mobility of polycrystalline graphene are correlated with the quantity of grain boundaries. An increase in grain boundary quantity impedes electron motion in graphene, but their impact becomes minimal when the grain boundaries reach a critical quantity. Furthermore, by observing and calculating the fractal dimension through transmission electron microscopy, it was discovered that different types of grain boundaries also affect charge accumulation, with well-connected grain boundaries benefiting electrical properties.
關鍵字(中) ★ 多晶石墨烯
★ 化學氣相沉積
★ 晶界
★ 電性能		 關鍵字(英) ★ polycrystalline graphene
★ chemical vapor deposition
★ grain boundary
★ electrical property
論文目次 摘要 i
Abstract ii
致謝 iv
Content v
List of figures viii
List of tables xi
Chapter 1. Introduction 1
Chapter 2. Background 3
2.1 Graphene 3
2.2 Graphene synthesis 7
2.2.1 Mechanical exfoliation 7
2.2.2 Thermal decomposition of SiC 8
2.2.3 Liquid-phase exfoliation 9
2.2.4 Chemical Vapor Deposition (CVD) 10
2.3 Generation of graphene grain boundaries (GBs) 12
2.3.1 Simulate different structures of GBs 12
2.3.2 Experimentally generate GBs with different structures 15
2.4 Study on electrical properties of GBs 17
2.4.1 Local electronic state 18
2.4.2 The electrical influence of individual GB 22
2.4.3 The global electrical influence of GBs 24
2.5 Raman spectroscopy of graphene 26
2.5.1 Raman characteristics and production process of graphene 26
2.5.2 Number of layers and relative orientation 28
2.5.3 Defects and disorder 30
Chapter 3. Experiment setup and methods 33
3.1 Experimental instrument 33
3.1.1 Rapid thermal chemical vapor deposition (RTCVD) 33
3.1.2 Raman spectroscopy 35
3.1.3 Scanning Electron Microscope (SEM) 36
3.1.4 Lithography 38
3.1.5 Reactive-ion etching (RIE) 41
3.1.6 Electron-gun Evaporation 42
3.1.7 Van der Pauw 43
3.1.8 Electrochemical impedance spectroscopy (EIS) 46
3.1.9 Transmission electron microscope (TEM) 48
3.1.10 Fractal dimension calculation 50
3.2 Experimental procedure 51
3.2.1 Graphene sample preparation 51
3.2.2 First type device fabrication 55
3.2.3 Second type device fabrication 55
3.2.4 Electrical measurement 60
3.2.5 Visualize grain boundaries (GBs) 61
Chapter 4. Result and Discussion 62
4.1 Material Characterization of Graphene 63
4.2 Graphene device structure 69
4.3 Graphene van der Pauw measurement 71
4.4 Graphene Electrochemical Impedance Spectroscopy Measurement 76
4.5 Fractal theory and TEM measurement 79
Chapter 5. Conclusion 87
Reference 89
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指導教授 溫偉源 楊仲準(Wei-Yen Woon Chun-Chuen Yang) 審核日期 2023-6-29
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