參考文獻 |
[1] R. Tomaszewski, "Citations to chemical resources in scholarly articles: CRC Handbook of Chemistry and Physics and The Merck Index," Scientometrics, vol. 112, no. 3, pp. 1865-1879, 2017.
[2] P. Patnaik, Handbook of inorganic chemicals. McGraw-Hill New York, 2003.
[3] E. G. Acheson, "Carborundum: Its history, manufacture and uses," Journal of the Franklin Institute, vol. 136, no. 4, pp. 279-289, 1893.
[4] N. P. Hung, Z. W. Zhong, and C. H. Zhong, "Grinding of Metal Matrix Composites Reinforced with Silicon-Carbide Particles," Materials and Manufacturing Processes, vol. 12, no. 6, pp. 1075-1091, 1997/11/01 1997, doi: 10.1080/10426919708935205.
[5] S. P, H. K. Natarajan, and P. K. J, "Study of silicon carbide-reinforced aluminum matrix composite brake rotor for motorcycle application," The International Journal of Advanced Manufacturing Technology, vol. 94, no. 1, pp. 1461-1475, 2018/01/01 2018, doi: 10.1007/s00170-017-0969-7.
[6] A. Harley-Trochimczyk, A. Rao, H. Long, A. Zettl, C. Carraro, and R. Maboudian, "Low-power catalytic gas sensing using highly stable silicon carbide microheaters," Journal of Micromechanics and Microengineering, vol. 27, 02/01 2017, doi: 10.1088/1361-6439/aa5d70.
[7] P. Kwasnicki, "Evaluation of doping in 4H-SiC by optical spectroscopies," Université Montpellier II-Sciences et Techniques du Languedoc, 2014.
[8] J. Jian and J. Sun, "A review of recent progress on silicon carbide for photoelectrochemical water splitting," Solar RRL, vol. 4, no. 7, p. 2000111, 2020.
[9] M. Stockmeier, S. A. Sakwe, P. Hens, P. J. Wellmann, R. Hock, and A. Magerl, "Thermal expansion coefficients of 6H silicon carbide," in Materials Science Forum, 2009, vol. 600: Trans Tech Publ, pp. 517-520.
[10] A. Elasser and T. P. Chow, "Silicon carbide benefits and advantages for power electronics circuits and systems," Proceedings of the IEEE, vol. 90, no. 6, pp. 969-986, 2002.
[11] X. Y. Wang, Y. Li, and S. J. Li, "Study on the impact of the cutting process of wire saw on sic wafers," Applied Mechanics and Materials, vol. 120, pp. 593-597, 2012.
[12] G. Chen et al., "Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face," Applied Surface Science, vol. 536, p. 147963, 2021.
[13] Y. Zhou, G. Pan, X. Shi, S. Zhang, H. Gong, and G. Luo, "Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers," Tribology international, vol. 87, pp. 145-150, 2015.
[14] W. Wang et al., "Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers," Advanced Materials Interfaces, p. 2202369, 2023.
[15] G. Chen et al., "One-step fabrication of fine surfaces via femtosecond laser on sliced SiC," Materials Science in Semiconductor Processing, vol. 132, p. 105926, 2021.
[16] X. Yang, X. Yang, K. Kawai, K. Arima, and K. Yamamura, "Highly efficient planarization of sliced 4H–SiC (0001) wafer by slurryless electrochemical mechanical polishing," International Journal of Machine Tools and Manufacture, vol. 144, p. 103431, 2019.
[17] A. Luque and S. Hegedus, Handbook of photovoltaic science and engineering. John Wiley & Sons, 2011.
[18] A. Bidiville, K. Wasmer, M. Van der Meer, and C. Ballif, "Wire-sawing processes: parametrical study and modeling," Solar Energy Materials and Solar Cells, vol. 132, pp. 392-402, 2015.
[19] K. O. Dohnke, K. Kaspar, and D. Lewke, "Comparison of different novel chip separation methods for 4H-SiC," in Materials Science Forum, 2015, vol. 821: Trans Tech Publ, pp. 520-523.
[20] S. Lee, Y. Tani, T. Enomoto, and H. Sato, "Development of a dicing blade with photopolymerizable resins for improving machinability," CIRP annals, vol. 54, no. 1, pp. 293-296, 2005.
[21] W. Peng, X. Xu, and L. Zhang, "Improvement of a dicing blade using a whisker direction-controlled by an electric field," Journal of Materials Processing Technology, vol. 129, no. 1-3, pp. 377-379, 2002.
[22] H. Wang et al., "Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser," Crystals, vol. 13, no. 1, p. 15, 2022.
[23] W. Clark, A. Shih, C. Hardin, R. Lemaster, and S. McSpadden, "Fixed abrasive diamond wire machining—part I: process monitoring and wire tension force," International Journal of Machine Tools and Manufacture, vol. 43, no. 5, pp. 523-532, 2003.
[24] W. I. Clark, A. J. Shih, R. L. Lemaster, and S. B. McSpadden, "Fixed abrasive diamond wire machining—part II: experiment design and results," International Journal of Machine Tools and Manufacture, vol. 43, no. 5, pp. 533-542, 2003.
[25] C. W. Hardin, J. Qu, and A. J. Shih, "Fixed abrasive diamond wire saw slicing of single-crystal silicon carbide wafers," Materials and manufacturing processes, vol. 19, no. 2, pp. 355-367, 2004.
[26] H. Maeda, R. Takanabe, A. Takeda, S. Matsuda, and T. Kato, "High-speed slicing of SiC ingot by high-speed multi wire saw," in Materials Science Forum, 2014, vol. 778: Trans Tech Publ, pp. 771-775.
[27] W. Natsu, Y. Ito, M. Kunieda, K. Naoi, and N. Iguchi, "Effects of support method and mechanical property of 300 mm silicon wafer on sori measurement," Precision engineering, vol. 29, no. 1, pp. 19-26, 2005.
[28] M. R. Marks, Z. Hassan, and K. Y. Cheong, "Characterization methods for ultrathin wafer and die quality: A review," IEEE Transactions on components, packaging and manufacturing technology, vol. 4, no. 12, pp. 2042-2057, 2014.
[29] S. Wang et al., "4H‐SiC: a new nonlinear material for midinfrared lasers," Laser & Photonics Reviews, vol. 7, no. 5, pp. 831-838, 2013.
[30] E. Kim, Y. Shimotsuma, M. Sakakura, and K. Miura, "4H-SiC wafer slicing by using femtosecond laser double-pulses," Optical Materials Express, vol. 7, no. 7, pp. 2450-2460, 2017.
[31] S. Han et al., "Laser slicing of 4H-SiC wafers based on picosecond laser-induced micro-explosion via multiphoton processes," Optics & Laser Technology, vol. 154, p. 108323, 2022.
[32] L. Wang, C. Zhang, F. Liu, H. Zheng, and G. J. Cheng, "Process mechanism of ultrafast laser multi-focal-scribing for ultrafine and efficient stealth dicing of SiC wafers," Applied Physics A, vol. 128, no. 10, p. 872, 2022.
[33] S. Chin et al., "The propagation of powerful femtosecond laser pulses in opticalmedia: physics, applications, and new challenges," Canadian journal of physics, vol. 83, no. 9, pp. 863-905, 2005.
[34] Y. Zhang, X. Xie, Y. Huang, W. Hu, and J. Long, "Internal modified structure of silicon carbide prepared by ultrafast laser for wafer slicing," Ceramics International, vol. 49, no. 3, pp. 5249-5260, 2023.
[35] L. Jiang and H.-L. Tsai, "Improved two-temperature model and its application in ultrashort laser heating of metal films," 2005.
[36] L. V. Zhigilei, Z. Lin, and D. S. Ivanov, "Atomistic modeling of short pulse laser ablation of metals: connections between melting, spallation, and phase explosion," The Journal of Physical Chemistry C, vol. 113, no. 27, pp. 11892-11906, 2009.
[37] Y. Yamada, T. Ikeda, and J. Ikeno, "Precision laser slicing technology for single crystal SiC wafer 1st report: Study on slicing method considering kerf-loss," Journal of the Japan Society of Grinding Engineers, vol. 64, no. 12, pp. 635-642, 2020. |