| 摘要(英) |
With the advancement of quantum technology, the demand for single-photon detectors with photon-number resolving capability has been increasing, particularly in the fields of quantum communication and quantum computing. This has led to the development of detectors known as photon number resolving detectors (PNRD). Taking the example of the Controlled-NOT gate (CNOT gate) in linear optical quantum computing (LOQC), PNRD is essential for its operation and correction of error computations. Among various types of photodetectors, this study focuses on III-V single-photon avalanche diodes (SPADs) due to their simpler and more stable fabrication process compared to other detectors. Additionally, III-V SPADs are suitable for quantum key distribution (QKD) in the 1550 nm wavelength range for quantum communication. Achieving photon-number resolving on III-V SPADs requires measurements before reaching the breakdown current saturation, which means observing the breakdown signal at low excess bias. However, this signal is often overshadowed by capacitive signals. Another challenge is the afterpulsing effect, where the interference becomes more severe at higher frequencies due to the higher defect density in III-V materials.
Therefore, in this study, a self-made InGaAs/InAlAs Single-Photon Avalanche Diode (SPAD) was employed to operate in a sinusoidally gated mode at a frequency of 300 MHz. The use of a short gate width in this mode helped suppress dark counts and afterpulsing effects. Additionally, filtering techniques were applied to eliminate capacitance signals, ensuring that breakdown signals were discernible. Subsequent measurements were conducted at different temperatures to identify the optimal characteristics of the device. Finally, at a temperature of 200 K and under a wavelength of 1550 nm laser, the successful resolution of 5 photons was achieved. The performance in terms of Photon Number Resolving (PNR) showed superior results compared to a 100 MHz pulse-gated system. The study concluded by investigating the impact of varying frequencies and different multiplication layer thicknesses on the PNR performance. |
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