參考文獻 |
[1]https://electricalengineering123.com/fiber-optic-cable-structure-advantages/
[2] A. Hirata, T. Kosugi, H. Takahashi, R. Yamaguchi, F. Nakajima, T. Furuta, H. to, H. Sugahara, Y. Sato, and T. Nagatsuma, “120-GHz-Band Millimeter-Wave Photonic Wireless Link for 10-Gb/s Data Transmission,” IEEE Trans. Microwave Theory Tech., vol. 54, pp. 1937-1944, May. 2006.
[3] K. Hassan, M. Masarra, M. Zwingelstein, and I. Dayoub, ‘‘Channel estimation techniques for millimeter-wave communication systems: Achievements and challenges,’’ IEEE Open J. Commun. Soc., vol. 1,pp. 1336–1363, 2020.
[4] S. Gulkis, M. Allen, C. Backus, G. Beaudin, N. Biver, D. Bockelée-Morvan, J. Crovisier, D. Despois, P. Encrenaz, M. Frerking, M. Hofstadter,P. Hartogh, W. Ip, M. Janssen, L. Kamp, T. Koch, E. Lellouch,I. Mann, D. Muhleman, H. Rauer, P. Schloerb, and T. Spilker, “Remote sensing of a comet at millimeter and submillimeter wavelengths from an orbiting spacecraft,” Planet. Space Sci., vol. 55, no. 9, pp.1050–1057, Jun. 2007.
[5] S. Gulkis, S. Keihm, L. Kamp, C. Backus, M. Janssen, S. Lee, B.Davidsson, G. Beaudin, N. Biver, D. Bockelée-Morvan, J. Crovisier,P. Encrenaz, T. Encrenaz, P. Hartogh, M. Hofstadter, W. Ip,E. Lellouch,I. Mann, P. Schloerb, T. Spilker, and M. Frerking, “Millimeterand submillimeter measurements of asteroid (2867) steins during the rosetta flyby,” Planet. Space Sci., vol. 58, no. 9, pp. 1077–1087, Jul.2010.
[6]https://www.keysight.com/tw/zh/assets/3121-1515/technical-overviews/170GHz-220GHz-Broadband-Vector-Network-Analysis-Solution.pdf
[7] K. Kato, “Ultrawide-Band/High-Frequency Photodetectors,” IEEE Trans. Microwave Theory Tech., vol. 47, pp. 1265-1281, Jul. 1999.
[8] J.-W. Shi, H.-C. Hsu, F.-H. Huang, W.-S. Liu, J.-I. Chyi, Ja-Yu Lu, Chi-Kuang Sun, and Ci-Liang Pan, “Separated-Transport-Recombination p-i-n Photodiode for High-speed and High-power Performance” IEEE Photon. Technol. Lett, vol. 17, pp. 1722-1724, Aug. 2005.
[9] J.-M. Wun, H.-Y. Liu, Y.-L. Zeng , S.-D. Yang, C.-L. Pan, C.-B. Huang, and J.-W. Shi, “Photonic High-Power CW THz-Wave Generation by Using Flip-Chip Packaged Uni-Traveling Carrier Photodiode and Femtosecond Optical Pulse Generator,” IEEE/OSA Journal of Lightwave Technology, vol. 34, pp. 1387-1397, Feb., 2016.
[10] T. Ishibashi, Y. Muramoto, T. Yoshimatsu, and H. Ito, “Uni-traveling-Carrier Photodiodes for Terahertz Applications,” IEEE J. of Sel. Topics in Quantum Electronics, vol. 20, pp. 3804210, Nov.,/Dec., 2014.
[11] J.-W. Shi, F.-M. Kuo, and J. E. Bowers, “Design and Analysis of Ultra-High Speed Near-Ballistic Uni-Traveling-Carrier Photodiodes under a 50 Ω Load for High-Power Performance,” IEEE Photon. Technol. Lett., vol. 24, pp. 533-535, April, 2012.
[12] E. Rouvalis, C. C. Renaud, D. G. Moodie, M. J. Robertson, and A. J. Seeds “Traveling-wave Uni-Traveling Carrier Photodiodes for continuous wave THz generation,” Optics Express, vol. 18, No. 11, pp. 11105-11110, May, 2010.
[13] T. H. Stievater and K. J. Williams, “Thermally Induced Nonlinearities in High-Speed p-i-n Photodetectors,” IEEE Photon. Technol. Lett, vol. 16, pp. 239-241, Jan. 2004.
[14] N. Li, H. Chen, N. Duan, M. Liu, S. Demiguel, R. Sidhu, A. L. Holmes, Jr., and J.C. Campbell, “High Power Photodiode Wafer Bonded to Si Using Au With Improved Responsivity and Output Power” IEEE Photon. Technol. Lett, vol. 18, pp. 2526-2528, Dec. 2006.
[15] N. Duan, X. Wang, N. Li, H.-D. Liu, and Joe C. Campbell“ThermalAnalysis of High-Power InGaAs–InP Photodiodes,” IEEE Journal Of Quantum Electronics, vol. 42, no. 12, pp. 1255-1258, Dec. 2006.
[16] J. Das, H. Oprins, H. Ji, A. Sarua, W. Ruythooren, J. Derluyn, M. Kuball, M. Germain, and G. Borghs “Improved Thermal Performance of AlGaN/GaN HEMTs by an Optimized Flip-Chip Design,” IEEE Trans. On Electron Device, vol. 53, no. 11, pp. 2696-2700, Nov. 2006.
[17] https://www.applichem.com.tw/news-detail-2864581.html
[18] https://www.albisopto.com/
[19] T. Liu, Y. Huang, Q. Wei, K. Liu, X. Duan, and X. Ren, “Optimized uni-traveling carrier photodiode and mushroom-mesa structure for high-power and sub-terahertz bandwidth under zero- and low-bias operation,” Journal of Physics Communications, vol. 3, no. 9, p. 095004, Sep. 2019.
[20] https://www.youtube.com/watch?v=8M91t7rl130&t=890s
[21] L. A. Rusch and X. Guan, "Silicon Photonics for High-Speed 5G and Optical Networks," 2023 Optical Fiber Communications Conference and Exhibition (OFC), San Diego, CA, USA, 2023, pp. 1-3.
[22]https://www.sharetechnote.com/html/Handbook_LTE_BeamForming.html
[23] S. Koenig et al., “Wireless sub-THz communication system with high data rate,” Nature Photon., vol. 7, no. 12, pp. 977-981, Dec, 2013.
[24] F.-M. Kuo , J.-W. Shi, “Remotely Up-Converted 20-Gbit /s Error-Free Wireless On–Off-Keying Data Transmission at W-Band Using an Ultra-Wideband Photonic Transmitter-Mixer.” IEEE Photonics Journal, vol. 3, no. 2, April ,2011.
[25] J.-W. Shi, C.-Y. Wu, Y.-S. Wu, P.-H. Chiu, and C.-C. Hong, High-Speed, High-Responsivity, and High-Power Performance of Near- Ballistic Uni-Traveling-Carrier Photodiode at 1.55μm Wavelength,” IEEE Photon. Technol. Lett., vol. 17, pp. 1929-1931, Sep. 2005.
[26] Y.-S. Wu, and J.-W. Shi, “Dynamic Analysis of High-Power and High-Speed Near-Ballistic Uni traveling Carrier Photodiodes at W-Band," IEEE Photon. Technol. Lett., vol. 20, pp. 1160-1162, July. 2008.
[27] H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, and T. Ishibashi, “High-Speed and High-Output InP–InGaAs Uni traveling-Carrier Photodiodes,” IEEE J. Quantum Electron., vol. 10, pp. 709–727, Jul./Aug. 2004.
[28] N. Shimizu, N. Watanabe, T. Furuta, and T. Ishibashi, “InP-InGaA Uni-Traveling-Carrier Photodiode With Improved 3-dB Bandwidth of Over 150GHz,” IEEE Photon. Technol. Lett., vol. 10, pp. 412-414, Mar. 1998.
[29] T. Ishibashi and Y. Yamauchi, “A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structure,” IEEE Trans. Electron Devices, vol. 35, no. 4, pp. 401–404, Apr. 1988.
[30] 溫志閔「超高速單載子傳輸光偵測器和其在超寬頻帶的波導耦合式兆赫茲光子傳輸器之應用」,國立中央大學,博士論文,民國107年。
[31] T. Ishibashi, Y. Muramoto, T. Yoshimatsu, and H. Ito, “Uni traveling carrier photodiodes for terahertz applications,” IEEE J. Sel. Topics Quantum Electron., vol. 20, no. 6, pp. 79-88, Dec. 2014.
[32] J.-M. Wun, H.-Y. Liu, Y.-L. Zeng , S.-D. Yang, C.-L. Pan, C.-B. Huang, and J.-W. Shi, “Photonic High-Power CW THz-Wave Generation by Using Flip-Chip Packaged Uni-Traveling Carrier Photodiode and Femtosecond Optical Pulse Generator,” IEEE/OSA Journal of Lightwave Technology, vol. 34, pp. 1387-1397, Feb., 2016.
[33] J.-M. Wun, R.-L. Chao, Y.-W. Wang, Yi.H. Chen, and J.-W. Shi, “Type-II GaAs0.5Sb0.5/InP Uni-Traveling Carrier Photodiodes with Sub-THz Bandwidth and High-Power Performance under Zero-Bias Operation,” IEEE/OSA Journal of Lightwave Technology, vol. 35, pp. 711-716, Feb., 2017.
[34] Y. He, B. W. Liang, N. C. Tien, and C. W. Tu, “Selective Chemical Etching of InP over InAIAs,” J. Electrochem. Soc., Vol. 139, no. 7, pp. 2046-2048, 1992.
[35] H. Ito, T. Furuta, F. Nakajima, K. Yoshino, T. Ishibashi, “Photonic generation of continuous THz wave using uni-traveling-carrier photodiode,” J. of Lightwave Technol., vol. 23, pp. 4016-4021, Dec. 2005.
[36] https://spie.org/news/6827-ultrafast-photodiodes-under-forward-bias-conditions?SSO=1
[37] 陳信瑲「具有高功率、超寬頻表現在W–頻段(75–110GHz)的光子傳輸器High–Power and Ultra–Wide Bandwidth Photonic Transmitter at W–band (75–110GHz)」,國立交通大學,博士論文,民國99年。
[38] W. Fawcett and G. Hill, “Temperature dependence of the velocity/field characteristic of electrons in InP,” Electron. Lett., vol. 11, no. 4, pp. 80-81, Feb. 1975.
[39] N. Shimizu, N. Watanabe, T. Furuta, and T. Ishibashi, “InP-InGaA Uni-Traveling-Carrier Photodiode With Improved 3-dB Bandwidth of Over 150GHz,” IEEE Photon. Technol. Lett., vol. 10, pp. 412-414, Mar. 1998.
[40] J.-W. Shi, C.-B. Huang, and C.-L. Pan, “Millimeter-wave Photonic Wireless Links for Very-High Data Rate Communication,” NPG Asia Materials, vol. 3, No. 2, pp. 41-48, April, 2011.
[41] J.-W. Shi, K.-L. Chi, C.-Y. Li, and J.-M. Wun “Dynamic Analysis of High-Efficiency InP Based Photodiode for 40 Gbit/sec Optical Interconnect across a Wide Optical Window (0.85 to 1.55 µm),” IEEE/OSA Journal of Lightwave Technology, vol. 33, no. 4, pp. 921-927, Feb., 2015.
[42] 王昱文「具有兆赫波頻寬、高輸出功率,使用GaAs0.5Sb0.5 / In0.53Ga0.47As II-型混合吸收層的超快速單載子傳輸光電二極體」,國立中央大學,碩士論文,民國106年。
[43] J. S. Morgan, et al., “Bias-Insensitive GaAsSb/InP CC-MUTC Photodiodes for mmWave generation up to 325 GHz”, Journal of Lightwave Technology, forthcoming publication, April, 2023.
[44] M. Grzeslo et al., “High saturation photocurrent THz waveguide-type MUTC-photodiodes reaching mW output power within the WR3. 4 band”, Optics Express, vol. 31, no. 4, pp. 6484-6498, 2023.
[45] Y. Tian, B. Xiong, C. Sun, Z. Hao, J. Wang, L. Wang, Y. Han, H. Li, L. Gan, and Y. Luo, “Ultrafast MUTC photodiodes over 200 GHz with high saturation power”, Optics Express, vol. 31, no. 15, pp. 23790-23800, 2023.
[46] J.-M. Wun, Y.-W. Wang, and J.-W. Shi, “Ultrafast uni-traveling carrier photodiodes with GaAs0.5Sb0.5/In0.53Ga0.47As type-II hybrid absorbers for high-power operation at THz frequencies,” IEEE J. Sel. Topics Quantum Electron., vol. 24, no. 2, pp. 1-7, Mar, 2018.
[47] https://www.ioffe.ru/SVA/NSM/Semicond/InP/thermal.html
[48] G. R. Jaffe et al., “Measurements of the thermal resistivity of InAlAs, InGaAs, and InAlAs/InGaAs superlattices,” ACS Appl. Mater. Interfaces, vol. 11, no. 12, pp. 11970-11975, Feb, 2019.
[49] R. Sidhu, L. Zhang, N. Tan, N. Duan, J. C. Campbell, A. L. Holmes, Jr., C.-F. Hsu, and M. A. Itzler, “2.4 μm cutoff wavelength avalanche photodiode on InP substrate,” Electron. Lett., vol. 42, no. 3, pp. 181-182, Feb, 2006. |