參考文獻 |
[1] S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matushita, T. Mukai, MRS Internet J. Nitride Semicond. Res. 4S1 (1999) G1.1.
[2] D. Doppalapudi, S. N. Basu, K. F. Ludwig Jr., T. D. Moustakas, J. Appl. Phy. 84 (1998) 1389.
[3] T. Uenoyama, MRS Internet J. Nitride Semicond. Res. 4S1 (1999) G2.9.
[4] C. A. Tran, R. F. Karlicek Jr., M. Schurman, A. Osinsky, V. Merai, Y. Li, Eliashevich, M. G. Brown, J. Nering, I. Ferguson, R. Stall, J. Crystal Growth 195 (1998) 397.
[5] K. Domen, A. Kuramata, T. Tanahashi, Appl. Phys. Lett. 72 (1998) 1359.
[6] T. Deguchi, T. Azuhata, T. Sota, S. Chichibu, S. Nakamura, Mater. Sci. Eng. B 50 (1997) 251.
[7] 許樹恩, 吳泰伯, “X光繞射原理與材料結構分析”, 國科會精儀中心發行, 科儀叢書6.
[8] P. F. Fewster, “X-ray diffraction from multiple quantum well structures”, Phillips J. Res. 41 (1986) p268-289.
[9] L. T. Romano, B. S. Krusor, M. D. McCluskey, D. P. Bour and K. Nauka, “Structural and optical properties of pseudomorphic InxGa1-xN alloys”, Appl. Phys. Lett. v.73 n.13 (1998) p.1757-1759
[10] M. D. McCluskey, L. T. Romano, B. S. Krusor, D. P. Bour and S. Brennan, “Phase separation in InGaN/GaN multiple quantum wells”, Appl. Phy. Lett. v.72 n.14 (1998) p.1730-1732
[11] S. Nakamura, T. Muxkia, and M. Senoh, Jpn. J. Appl. Phys. 32 (1993) L16.
[12] K. Osamura, S. Naka, and Y. Murakami, J. Appl. Phys. 46 (1975) 3432.
[13] S. S. Chuang, “Physics of photoelectronic devices”, Wiley interscience (1995) p443.
[14] S. L. Chung, “Physics of Optoelectronic Devices”, Chap. 3, Wiley, New York (1995).
[15] J. F. Muth, J. D. Brown, M. A. L. Johnson, Zhonghai Y., R. M. Kolbas, J. W. Cook, JR. and J. F. Schetzina, “Absorption Coefficient and Refractive Index of GaN, AlN, and AlGaN Alloys,” MRS Internet J. Nitride Semicond. Res. 4S1 (1999) G5.2.
[16] C. C. Chou, C. M. Lee, T. E. Nee, J. I. Chyi, “Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells”, Proc. of Electronics Devices and Materials Symposia 99, Chung-Li, Taiwan (1999) 81.
[17] R. Singh, D. Doppalapudi, T. D. Moustakas and L. T. Romano, “Phase separation in InGaN thick films and formation of InGaN/GaN double hetero-structures in the entire alloy composition”, Appl. Phys. Lett. v.70 n.9 (1997) 1089-1091.
[18] N. A. El-Masry, E. L. Piner, S. X. Liu and S. M. Bedair, “Phase separation in InGaN grown by metal-organic chemical vapor deposition”, Appl. Phys. Lett. v.72 n.1 (1998) 40-42.
[19] L. T. Romano, M. D. McCluskey, C. G. Van de Walle, J. E. Northrup, D. P. Bour, M. Kneissl, T. Suski and J. Jun, “Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures”, Appl. Phys. Lett. v.75 n.25 (1999) 3950-3952.
[20] C. C. Chen, H. W. Chuang, G. C. Chi, C. C. Chuo, “Optical pumping spectra for InxGa1-xN/GaN multiple quantum well structures with indium content x>0.35”, J. I. Chyi, Proc. of Photonics Taiwan (2000) 4078-06. |