博碩士論文 87324029 詳細資訊




以作者查詢圖書館館藏 以作者查詢臺灣博碩士 以作者查詢全國書目 勘誤回報 、線上人數:8 、訪客IP:3.92.28.84
姓名 廖俊豪(Jing-Hau Lai)  查詢紙本館藏   畢業系所 電機工程學系
論文名稱 金屬-半導體-金屬光偵測器的特性
(Characteristics of MSM Photodetectors)
相關論文
★ 非晶質氮化矽氫基薄膜發光二極體與有機發光二極體的光電特性★ 具非晶質n-i-p-n層之氧化多孔矽發光二極體的光電特性
★ 低漏電流與高崩潰電壓大面積矽偵測器製程之研究★ 具自行對準凹陷電極1x4矽質金屬-半導體-金屬光偵測器陣列的特性
★ 非晶矽射極異質雙載子電晶體與有機發光二極體的特性★ 吸光區累崩區分離的累崩光二極體
★ 蕭特基源/汲極接觸的反堆疊型非晶質矽化鍺薄膜電晶體★ 矽晶圓上具有隔離氧化層非晶質薄膜發光二極體之光電特性
★ 具非晶異質接面及溝渠式電極之矽質金屬-半導體-金屬光偵測器的暗電流特性★ 非晶矽/晶質矽異質接面矽基金屬-半導體-金屬光檢測器與具非晶質無機電子/電洞注入層高分子發光二極體之研究
★ 具非晶質矽合金類量子井極薄障層之高靈敏度平面矽基金屬–半導體–金屬光檢測器★ 具蕭特基源/汲極的上閘極型非晶矽鍺與 多晶矽薄膜電晶體
★ 大面積矽偵測器的製程改良與元件設計★ 具組成梯度能隙非晶質矽合金電子注入層與電洞緩衝層的高分子發光二極體
★ 非晶質吸光區與累增區分離之類超晶格累崩光二極體★ 具非晶質矽合金調變週期類超晶格薄膜複層之低暗電流高熱穩定度平面矽基金屬–半導體–金屬光檢測器
檔案 [Endnote RIS 格式]    [Bibtex 格式]    [相關文章]   [文章引用]   [完整記錄]   [館藏目錄]   [檢視]  [下載]
  1. 本電子論文使用權限為同意立即開放。
  2. 已達開放權限電子全文僅授權使用者為學術研究之目的,進行個人非營利性質之檢索、閱讀、列印。
  3. 請遵守中華民國著作權法之相關規定,切勿任意重製、散佈、改作、轉貼、播送,以免觸法。

摘要(中) 本論文探討含非晶矽化鍺氫梯度結構薄膜的金屬-半導體-金屬光偵測器特性。藉調整梯度結構層沉積的時間與溫度及利用氫氣退火等研究所製作的各種金屬-半導體-金屬光偵測器的交、直流特性。再者,利用自動對準製程完成溝渠式電極光偵測器並探討其特性。最後,利用金屬-半導體-金屬光偵測器的結構研發出低操作電壓之大工作面積光偵測器,以利實際運用的探討。
摘要(英) In this thesis, first, the metal-semiconductor-metal photodetectors (MSM-PDs) with a graded hydrogenated intrinsic amorphous silicon-germanium (i-a-Si1-xGex:H) film deposited on [100] n-type silicon wafer, and the Cr top-electrodes have been studied. The effects of elapsed-time during growing graded i-a-Si1-xGex:H layer, substrate temperature and H2-annealing on device characteristics were compared and discussed.
Then, the fabrication process and characteristics of the MSM-PDs with self-aligned trench-electrodes were investigated. Their obtainable characteristics were nearly the same as those of a conventional MSM-PD with trench-electrodes, which needed an additional mask.
Finally, instead of i-a-Si1-xGex:H film, the i-a-Si:H film was used and deposited on Si wafer to form MSM-PDs with large active-area. The effects of resistivity of Si wafer on device performances were also discussed. The device linearity, knee voltage, and dark current were studied.
關鍵字(中) ★ 光偵測器 關鍵字(英) ★ MSM
★ photodetector
論文目次 Contents
Abstract……………………………………………………………(Ⅲ)
Table Captions……..………………………………………………(Ⅳ)
Figure Captions…………………………………………………… (Ⅴ)
Chapter 1 INTRODUCTION………………………………………1
Chapter 2 DEVICE OPERATION AND FABRICATION………....6
3-1 Operation of MSM-PD……………………....……6
3-2 Design Considerations…………..….……………11
3-3 Device Fabrication.………………………….…12
Chapter 3 MEASUREMENT TECHNIQUES……………....…….20
4-1 Responsivity……………..……………..………...20
4-2 Response Speed…….……….………………..…..20
Chapter 4 EXPERIMENTAL RESULTS AND DISCUSSIONS…24
4-3 MSM-PD with Graded i-a-Si1 -xGex:H Film.….24
4-1-6 Motivation……………………….……………….24
4-1-7 Deposition Processes…….. ………...…..……….26
4-1-8 Deposition Durations.……………………………30
4-1-9 Substrate Temperatures………………………….30
4-1-10 H2—Annealing….…………………..……………35
4-4 MSM-PDs with Self-Aligned Trench-Electrodes…
………………………………………………..….40
4-2-5 Motivation……………………………………….40
4-2-6 Device Structure and Fabrication……………….40
4-2-7 Finger Spacings and Active-Areas…….………43
4-2-8 Temperature Dependence………………………..46
4-3 Large Active-Area MSM-PD…………………….48
4-3-3 Motivation………………………………………..48
4-3-4 Resistivities of Si Substrate………….………….48
Chapter 5 CONCLUSIONS…………………………………………..52
REFERENCES……………………………………………………….…54
參考文獻 [1] P. D. Hodson, R. H. Wallis, J. I. Davies, and H. E. Shephard, "InGaAs PIN Photodiodes on Recessed Semi-Insulating GaAs Substrates," IEE Proceeding- J, vol. 135, no. 1, pp. 2-4, 1988.
[2] K. Wakita, I. Iotaka, K. Mogi, and Y. Kawamura, "High-Speed AlGaAs Multiple Quantum Well PIN Photodiodes," Electronics Letters, vol. 25, no. 22, pp. 1533-1534, 1989.
[3] Q. Wada, S. Miura, T. Mikawa, O. Aoki, and T. Kiyomga, "Fabrication of Monolithic Twin-GaInAs PIN Photodiode for Balanced Dual-Detector Optical Coherent Receivers," Electronics Letters, vol. 24, no. 9, pp. 514-516, 1988.
[4] T. Kakawa, N. Matsumoto, and K. Kumabe, "Amorphous Silicon Photoconductive Sensor," Jpn. J. Appl. Phys., vol. 21, Suppl. 12-1, pp. 251-256, 1981.
[5] Y. K. Fang, S. B. Hwang, K. H. Chen, C. R. Liu, and L. C. Kuo, "A Metal-Amorphous-Silicon-Germanium Alloy Schottky Barrier for Infrared Optoelectronic IC on Glass Substrate Application," IEEE Trans. Electron Devices, vol. 39, pp. 49-51, 1992.
[6] C. Y. Chang, B. S. Wu, Y. K. Fang, and R. H. Lee, "Amorphous Silicon Bulk Barrier Phototransistor with Schottky Barrier Emitter."Appl. Phys. Lett., vol. 47, pp. 49-51, 1985.
[7] S. B. Hwang, Y. K. Fang, K. H. Chen, C. R. Liu, J. D. Hwang, and M. H. Chou, "An a-Si:H/a-SiGe:H Bulk Barrier Phototransistor with an a-SiC:H Barrier Enhancement Layer for High-gain IR Optical Detector," IEEE Trans. Electron Devices, vol. 40, no. 2, pp. 342-347, 1993.
[8] S. Takayama, K. Mori, K. Suzuki, and C. Tanuma, "An a-Si:H Photoconductive Sensor with Al Gate Electrode," IEEE Trans. Electron Devices, vol. 40, no. 2, pp. 342-347, 1993.
[9] J. W. Hong, W. L. Laih, Y. W. Chen, Y. K. Fang, C. Y. Chang, and J. Gong, "Optical and Noise Characteristics of Amorphous Si/SiC Superlattice Reach-Through Avalanche Photodidoes," IEEE Trans. Electron Devices, vol. 37, no. 8, pp. 1804-1808, 1990.
[10] Y. K. Fang, S. B. Hwang, K. H. Chen, C. R. Liu, M. J. Tsai, and L. C. Kuo, "An Amorphous SiC/Si Heterojunction p-i-n Diode for Low-Noise and High-Sensitivity UV Detector," IEEE Trans. Electron Devices, vol. 39, no. 2, pp. 292-296, 1992.
[11] Dennis L. Gogers, Lightwave Technol., vol. 12, p. 625, 1991.
[12] Dennis L. Gogers, "Integrated Optical Receviers Using MSM Detectors," Journal of Lightwave Technology, vol.9, no.12, pp. 1635-1638, December 1991.
[13] S. M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, Inc., 2nd ed, Chap. 10, p. 613, 1985.
[14] S.Y. Chou, Y. Liu, P.B. Fischer, "Tera-Hertz GaAs Metal-Semiconductor-Metal Photodetectors with Nanoscale Finger Spacing and Width," IEDM, pp. 745-748, 1991.
[15] S. Y. Chou, S. Alexandrou, C. C. Wang, and T. Y. Hsiang, 蔾 GHz Si MSM Photodetectors," IEEE Trans. Electron Devices, vol. 40, no. 11, pp. 2145-2146, 1993.
[16] Y. A. Chen, "Design and Fabrication of i-a-Si:H and i-a-SiGe:H Metal-Semiconductor-Metal Photodetector (MSM-PDs)," Master thesis, Institute of Electrical Engineering, Natonal Central University, Chungli, Taiwan, Republic of China, 1994.
[17] A. K. Sharma, K. A. M. Scott, S. R. J. Brueck, J. C. Zolper, and D. R. Myers, "Ion-Implantation Enhanced Metal-Si-Metal Photodetectors," IEEE Photo. Technol. Lett., vol. 6, no. 5, pp. 635-638, 1991.
[18] T. J. King, and K. C. Saraswat, "Deposition and Properties of Low-Pressure Chemical-Vapor Deposited Polycrystalline Silicon-Germanium Films," J. Electrochem. Soc., vol. 141, no. 8, pp. 2235, 1994.
[19] T. I. Kamins and D. J. Meryer, "Kinetics of Silicon-Germanium Deposition by Atmospheric-Pressure Chemical Vapor Deposition," Appl. Phys. Lett., vol. 59, no.7, pp. 178-180, 1991.
[20] J. C. Wang, "Improving the Characteristics of Amorphous Metal-Semiconductor-Metal Photodetector (MSM-PDs)," Master Thesis, Institute of Electrical Engineering, National Central University, Chungli, Taiwan, Republic of China, 1996.
[21] J. I. Chyi, T. S. Wei, J. W. Hong, W. Lin, and Y. K. Tu, " High Performance InGaAs MSM Photodetectors," ISLOE'93 Proceeding, pp. 466, 1993.
[22] B. S. Meyerson, K. J. Uram, and F. K. LeGoues, "Cooperative Growth Phenomena in Silicon/Germanium Low-Temperature Epitaxy," Appl. Phys. Lett., vol. 53, no. 25, pp. 2555-2557, 1988.
[23] K. Tanaka, Glow-Discharge Hydrogenated Amorphous Silicon, Chap. 3, KTK Scientific Publishers, 1989.
[24] T. C. Chang, "Characteristics of Metal-Semiconductor-Metal Photodetector (MSM-PDs) with Amorphous Heterojunction and Recessed or Ridged Cr Electrodes," Master Thesis, Institute of Electrical Engineering, National Central University, Chungli, Taiwan, Republic of China, 1997.
指導教授 洪志旺(Jyh-Wong Hong) 審核日期 2000-6-19
推文 facebook   plurk   twitter   funp   google   live   udn   HD   myshare   reddit   netvibes   friend   youpush   delicious   baidu   
網路書籤 Google bookmarks   del.icio.us   hemidemi   myshare   

若有論文相關問題,請聯絡國立中央大學圖書館推廣服務組 TEL:(03)422-7151轉57407,或E-mail聯絡  - 隱私權政策聲明