非晶質氮化矽氫基薄膜發光二極體與有機發光二極體的光電特性

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黃治平(Zhe-Pin Huang) 查詢紙本館藏

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論文名稱

非晶質氮化矽氫基薄膜發光二極體與有機發光二極體的光電特性

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摘要(中)

本研究的另一主題是結合非晶質薄膜與有機聚合物發光材料研製有機發光二極體(OLED)。元件結構係以P-型非晶質膜取代傳統的聚合物電洞注入層，並以N-型非晶質膜作為電子注入層。僅含P-型非晶矽層的OLED，其臨限電壓為6.21 V，而當電流密度為 600 mA/cm2時，發光亮度可達1383 cd/m2。再沈積N-型非晶矽後的元件，其臨限電壓為8.84 V，發光亮度則降至203 cd/m2。

關鍵字(中)

★ 薄膜發光二極體
★ 有激發光二極體
★ 非晶質薄膜

關鍵字(英)

論文目次

Contents
Abstract Ⅲ
Table Captions ???? Ⅳ
Figure Captions Ⅴ
Chapter 1 Introduction 1
Chapter 2 A-SiN:H-Based TFLED
2.1 Preparations of Various Thin Films 4
2.1.1 Deposition System 4
2.1.2 Film Deposition 4
2.2 Device Synopsis 10
2.3 Device Fabrications 10
2.4 Measurement Techniques 16
2.4.1 Optical Bandgaps of Amorphous films 16
2.4.2 EL Intensity and Brightness 16
2.4.3 EL Spectrum 16
2.5 Results and Discussions 19
2.5.1 Fundamental Considerations 19
2.5.2 Current-Conduction Mechanism 19
2.5.3 J-V and B-V Characteristics 21
2.5.4 EL Spectra 25
Chapter 3 Organic LEDs
3.1 Fundamentals of OLED 31
3.2 Device Fabrications 34
3.3 Results and Discussions 34
3.3.1 The p-a-Si:H and p-SiC:H films 34
3.3.2 The n-a-Si:H layer 42
3.3.3 EL Spectra 42
Chapter 4 Conclusions 50
References 52

參考文獻

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指導教授

洪志旺(Jyh-Wong Hong)

審核日期

2000-6-21

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