博碩士論文 87324032 詳細資訊




以作者查詢圖書館館藏 以作者查詢臺灣博碩士 以作者查詢全國書目 勘誤回報 、線上人數:97 、訪客IP:54.81.220.239
姓名 許立民(Li-Ming Hsu)  查詢紙本館藏   畢業系所 電機工程學系
論文名稱 具非晶質n-i-p-n層之氧化多孔矽發光二極體的光電特性
(Optoelectronic Characteristics of Oxidized Porous Silicon-LEDs with Amorphous n-i-p-n Layers)
相關論文
★ 金屬-半導體-金屬光偵測器的特性★ 非晶質氮化矽氫基薄膜發光二極體與有機發光二極體的光電特性
★ 低漏電流與高崩潰電壓大面積矽偵測器製程之研究★ 具自行對準凹陷電極1x4矽質金屬-半導體-金屬光偵測器陣列的特性
★ 非晶矽射極異質雙載子電晶體與有機發光二極體的特性★ 吸光區累崩區分離的累崩光二極體
★ 蕭特基源/汲極接觸的反堆疊型非晶質矽化鍺薄膜電晶體★ 矽晶圓上具有隔離氧化層非晶質薄膜發光二極體之光電特性
★ 具非晶異質接面及溝渠式電極之矽質金屬-半導體-金屬光偵測器的暗電流特性★ 非晶矽/晶質矽異質接面矽基金屬-半導體-金屬光檢測器與具非晶質無機電子/電洞注入層高分子發光二極體之研究
★ 具非晶質矽合金類量子井極薄障層之高靈敏度平面矽基金屬–半導體–金屬光檢測器★ 具蕭特基源/汲極的上閘極型非晶矽鍺與 多晶矽薄膜電晶體
★ 大面積矽偵測器的製程改良與元件設計★ 具組成梯度能隙非晶質矽合金電子注入層與電洞緩衝層的高分子發光二極體
★ 非晶質吸光區與累增區分離之類超晶格累崩光二極體★ 具非晶質矽合金調變週期類超晶格薄膜複層之低暗電流高熱穩定度平面矽基金屬–半導體–金屬光檢測器
檔案 [Endnote RIS 格式]    [Bibtex 格式]    [相關文章]   [文章引用]   [完整記錄]   [館藏目錄]   [檢視]  [下載]
  1. 本電子論文使用權限為同意立即開放。
  2. 已達開放權限電子全文僅授權使用者為學術研究之目的,進行個人非營利性質之檢索、閱讀、列印。
  3. 請遵守中華民國著作權法之相關規定,切勿任意重製、散佈、改作、轉貼、播送,以免觸法。

摘要(中) 本論文的主要目的是探討以多孔矽(porous silicon)材料製作之發光二極體(light-emitting diode)的光電特性。在相同結構的氧化後多孔矽之上,分別沈積非晶矽氫(a-Si:H)及非晶碳化矽氫(a-SiC:H)n-i-p-n薄膜以改善元件特性。沈積非晶質膜時所用的電漿助長化學氣相沈積(PECVD)系統中附有一不銹鋼濾網。用以減少電漿直接撞擊薄膜所造成的傷害,同時亦可降低薄膜表面形成不必要聚合物的機會。再者,我們亦嘗試在沈積薄膜前,事先以乾蝕刻(dry etching)的方法將多孔矽上之氧化層去除,以降低元件的發光臨界電壓。
所研製的氧化多孔矽發光二極體都有不錯的整流特性,所採用的結構及製程均可有效提升元件的發光效率及降低元件的發光臨界電壓。
摘要(英) In this study, the conventional plasma-enhanced chemical vapor deposition (PECVD) system with an additional stainless steel (s.s.) mesh attached to cathode was used to deposit n-i-p-n a-Si:H layers onto oxidized porous silicon to form oxidized porous silicon light-emitting diode (PS-LED). The obtained PS-LED had a higher brightness (B) and a lower threshold voltage (Vth), as compared with the PS-LED fabricated with the same PECVD system without a s.s. mesh. The improvements of opto-electronic characteristics for the PS-LEDs would be mainly due to the used s.s. mesh, which would result in a deposited film with less plasma damages.
Also, n-i-p-n a-SiC:H layers were used to fabricate the PS-LED, to further improve device performances. The obtained PS-LED had the better optoelectronic characteristics, but its electroluminescence (EL) peak wavelength was red-shifted, probably due to, although the a-SiC:H layer had a higher optical band-gap but it also had a more random and hence more tail states, so the electron-hole pairs had more chance to be recombined through tail states.
關鍵字(中) ★ 氧化多孔矽
★ 發光二極體
關鍵字(英) ★ oxidized porous silicon
★ PS-LED
★ dry etching
論文目次 ABSTRACT................................................................................................III
TABLE CAPTIONS...................................................................................IV
FIGURE CAPTIONS...................................................................................V
CHAPTER 1 INTRODUCTION...............................................1
CHAPTER 2 EXPERIMENTAL PROCEDURES..................3
2.1Preparation and Formation Mechanism of Porous Silicon.....3
2.1.1Anodization....................................................................3
2.1.2Formation Mechanism of Porous Silicon.......................4
2.1.3Oxidation and Dry Etching.............................................9
2.2Device Structures and Fabrications........................................9
2.3Measurement Techniques.....................................................20
2.3.1Photoluminescence (PL)...............................................20
2.3.2Electroluminescence (EL)............................................20
2.3.3Optical-Gap..................................................................23
CHAPTER 3 RESULTS AND DISCUSSION........................27
3.1Properties of Porous Silicon.................................................27
3.1.1Photoluminescence.......................................................27
3.1.2Microstructure of PS.....................................................30
3.1.3UV-IR absorption spectrum..........................................30
3.2Characteristics of p-n-i-p-n PS-LED....................................37
3.2.1Fundamental Consideration..........................................37
3.2.2 J-V and B (brightness)-V Characteristics.....................38
3.2.3 Ideality factor……………………………………........46
3.2.4 EL spectrum………………………………………......46
CHAPTER 4 CONCLUSIONS................................................56
REFERENCES.............................................................................58
參考文獻 1. A. Uhlir, Bell System Tech. J. 35, p. 333, (1956).
2. D. R. Turner, J. Electrochem Soc. 105, p. 402, (1958).
3. R. L. Smith, S. F. Chung, and S. D. Collins, "A Theoretical Model of the Formation Morphologies of Porous Silicon", J. Electron. Mater., 17. P. 533 (1988).
4. Mano T, Bata T, Sawada H and Imai K., 1982 Digest of Papers, Symp VLSI Tech (Oiso, Japan:IEEE), p. 12.
5. Kauo Imai and Hidey Unno, "FIPOS (Full Isolation by Porous Oxidized Silicon) Technology and Its Application to LSIs", IEEE. Trans. Electron. Dev., ED-31, p. 297 (1984).
6. L. T. Canham, Appl. Phys. Lett. 57, p. 1046, (1990).
7. V. Lehmann and U. Gosele, "Porous Silicon Formation : A Quantum Wire Effect", Appl. Phys. Lett. 58, p. 856, (1991).
8. C. Tsai, K. H. Li, J. Sarathy, S. Shin, and J. C. Campbell, "Thermal Treatment Studies of the Photoluminescence Intensity of Porous Silicon", Appl. Phys. Lett. 59(22), p. 2814 (1991).
9. S. M. Proke, O.J. Glembocki et al., "An Alternate Mechanism for Porous Si Photoluminescence : Recombination in SiHx Complexes", Mater. Res. Soc. Proc 256, p. 107, (1992).
10. M. S. Brandt, H. D. Fuchs, J. Weber, and M. Cardona, "The Origin of Visible Luminescence from "Porous Silicon" : A New Interpretation", Solid State Comm. Vol 81 (4), p. 307, (1992).
11. Fereydoon Namavar, H. Paul Maruska, and Nader M. Kalkhoran, "Visible Electroluminescence from Porous Silicon np Heterjunction Diode", Appl. Phys. Lettg. 60(20), p. 2514, (1992).
12. Zhiliang Chen, Gijs Bosman, and Ochoa, "Visible Light Emission from Heavily Doped Porous Silicon Homojunction pn Diode", Appl. Phys. Lett. 62(7), p. 708, (1993).
13. J. P. Zheng, K. L. Jiao, W. P. Shen, W. A. Anderson, and H. S. Kowk, "Highly Sensitive Photodetector Using Porous Silicon", Appl. Phys. Lett. 61(4), p. 459, (1992).
13. J. P. Zheng, K. L. Jiao, W. P. Shen, W. A. Anderson, and H. S. Kowk, "Highly Sensitive Photodetector Using Porous Silicon", Appl. Phys. Lett. 61(4), p. 459, (1992).
15. Y. Kato, Jpn. J. Appl. Phys. 27, p. L1046, (1988).
16. Ulrich Gosele and Volker Lehmann, "Porous Silicon : A Sponge Structure.", International Conference on SSDM., Tsukuba, p. 469, (1992).
17. V. Lehmann, H. Cerva, and U. Gosele, "Pore Formation and Propagation Mechanism in Porous Silicon", Mat. Res. Soc. Symp. Proc. Vol. 256, p. 4, (1992).
17. V. Lehmann, H. Cerva, and U. Gosele, "Pore Formation and Propagation Mechanism in Porous Silicon", Mat. Res. Soc. Symp. Proc. Vol. 256, p. 4, (1992).
17. V. Lehmann, H. Cerva, and U. Gosele, "Pore Formation and Propagation Mechanism in Porous Silicon", Mat. Res. Soc. Symp. Proc. Vol. 256, p. 4, (1992).
17. V. Lehmann, H. Cerva, and U. Gosele, "Pore Formation and Propagation Mechanism in Porous Silicon", Mat. Res. Soc. Symp. Proc. Vol. 256, p. 4, (1992).
21. M. K. Lee and K. R. Peng "Blue Emission of Porous Silicon ", Appl. Phys. Lett. 62 (24) in june, p. 3159.
21. M. K. Lee and K. R. Peng "Blue Emission of Porous Silicon ", Appl. Phys. Lett. 62 (24) in june, p. 3159.
23. P. Steiner, F. Kozlowski, and W. Lang, "Blue and Green Electroluminescence from a Porous Silicon Device ", IEEE Electron Device Letters, Vol. 14, No. 7, July 1993.
23. P. Steiner, F. Kozlowski, and W. Lang, "Blue and Green Electroluminescence from a Porous Silicon Device ", IEEE Electron Device Letters, Vol. 14, No. 7, July 1993.
23. P. Steiner, F. Kozlowski, and W. Lang, "Blue and Green Electroluminescence from a Porous Silicon Device ", IEEE Electron Device Letters, Vol. 14, No. 7, July 1993.
26. M. S. Haque, H. A. Naseem, W. D. Brown, and S. S. Ang, "Hydrogenated Amorphous Silicon/Aluminum Interaction at Low Temperature", Mat. Res. Soc. Symp. Proc., Vol. 258, p. 1037, (1992).
27. Peter C. Sercel et al., "Visible Electroluminescence from Porous Silicon/ Hydrogenated Amorphous Silicon pn-Heterojunction Device", Appl. Phys. Lett. 68 (5), 29 Jan ., p. 684, (1996).
28. J. Tauc, Amorphous and Liquid Semiconductors, chap. 5, Plenum Press, p. 175, (1974).
30. Shoji Furukawa and Tatsuro Miyasato, "Quantum Size Effects on the Optical Band Gap of Microcrystalline Si:H", Phys. Rev. 38 (8), p. 5726, (1988).
指導教授 洪志旺(Jyh-Wong Hong) 審核日期 2000-6-21
推文 facebook   plurk   twitter   funp   google   live   udn   HD   myshare   reddit   netvibes   friend   youpush   delicious   baidu   
網路書籤 Google bookmarks   del.icio.us   hemidemi   myshare   

若有論文相關問題,請聯絡國立中央大學圖書館推廣服務組 TEL:(03)422-7151轉57407,或E-mail聯絡  - 隱私權政策聲明