博碩士論文 87324036 詳細資訊




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姓名 范振中(Chang-Chung Fan)  查詢紙本館藏   畢業系所 電機工程學系
論文名稱 磷化銦鎵/砷化鎵異質接面雙極性電晶體之研製及其集極調變對元件特性的影響
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關鍵字(中) ★ 磷化銦鎵/砷化鎵
★ 異質接面雙極性電晶體
★ 集極調變
關鍵字(英) ★ InGaP/GaAs
★ HBT
★ Collector Modulation
論文目次 第一章 導論
第二章 異質接面雙極性電晶體的製程與量測
2-1 元件的製程
2-2 具有Ledge的HBT之原理與製作
2-2-1 HBT Ledge的原理介紹
2-2-2 HBT Ledge的製程
2-3 元件特性的量測
2-3-1 直流量測
2-3-2 高頻量測
第三章 異質接面雙極性電晶體的特性分析及討論
3-1 異質接面雙極性電晶體之射極面積效應(Emitter Size Effect)
3-2 異質接面雙極性電晶體之Kirk Effect與電子飽和速率 (υsat)的計算
3-3 元件Layout對元件特性的影響
第四章 異質接面雙極性電晶體的集極調變
4-1 異質接面雙極性電晶體的集極調變的理論
4-2 異質接面雙極性電晶體的集極調變特性分析
第五章 結論
參考文獻
參考文獻 [1] Fresina, M.T.; Hartmann, Q.J.; Thomas, S.; Ahmari, D.A.; Caruth, D.; Feng, M.; Stillman, G.E. “InGaP/GaAs HBT with novel layer structure for emitter ledge fabrication” Electron Device Meeting, pp. 207-210, 1996.
[2] N.Matine, M.W. Dvorak, C.R. Bolognesi, X. Xu, J.Hu, S.P. Watkins and M.L.W. Thewalt “Nearly ideal InP/GaAsSb/InP double heterojunction bipolar transistors with ballistically launched collector electrons” Electronics Letters , Vol. 34, pp1700-172, August 1998.
[3] Yue-Fei Yang, Chung-Chi Hsu, Edward S. Yang, Hai-Jiang Ou “A High-Frequency GaInP/GaAs Heterojunction Bipolar Transistror with Reduced Base-Collector Capacitance Using a Selective Buried Sub-Collector” IEEE Electron Device Letters, Vol. 17, NO.11, pp 531-533, Nov. 1996.
[4] W.L.Chen, H.F. Chau, M. Tutt, M. C. Ho, T. S. Kim, T. Henderson “High-Speed InGaP/GaAs HBT’s Using a Simple Collector Undercut Technique to Reduce Base-Collector Capacitance” IEEE Electron Device Letters, Vol.18, NO.7, pp 355-357, July 1997.
[5] Hyunchol Shin, Christoph Gaessler, Helmut Leier “Reduction of Base-Collector Capacitance in InP/InGaAs HBT’s Using a Novel Double Polyimide Planarization Process” IEEE Electorn Device Letters, Vol.19, NO.8, pp. 297-299, August 1998.
[6] Yoram Betser, Dan Ritter “Reduction of the Base-Collector Capacitance in InP/GaInAs Heterojunction Bipolar Transistors Due to Electron Velocity Modulation” IEEE Trans. Electron Devices, Vol. 46, NO. 4, pp. 628-633, April 1999.
[7] Beng-Chye Lye, P. A. Houston, Ho-Kwang Yow, C. C. Button “GaInP/AlGaAs/GaInP Double Heterojunction Bipolar Transistors with Zero Conduction Band Spike at the Collector” IEEE Trans. Electron Devices, Vol. 45, NO. 12, pp. 2417-2421, Dec. 1998.
[8] Nicola Bovolon, Rüdiger Schultheis, Jan-Erik Müller, Peter Zwicknagl, Enrico Zanoni “Theoretical and Experimental Investigation of the Collector-Emitter Offset Voltage of AlGaAs/GaAs Heterojunction Bipolar Transistors” IEEE Trans. Electron Devices, Vol. 46, NO.4, pp. 622-627, April 1999.
[9] Y.M. Hsin, P.M. Asbeck “Experimental I-V Characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with Thin Base” Solid-State Electronics, V4-4/3, pp. 1-6, Dec. 1999.
[10] Osaake Nakajima, Koichi Nagata, Hiroshi Ito, Tadao Ishibashi, Takayuki, Sugeta “Emitter-Base Junction Size Effect on Current Gain Hfe of AlGaAs/GaAs Heterojunction Bipolar Transistors” JAP. Vol. 24, NO.8, pp. L596-L598 August, 1985.
[11] Y. F. Yang, C. C. Hsu, E. S. Yang “Surface Recombination Current in InGaP/ GaAs Heterostructure-Emitter Bipolar Transistors” IEEE Trans. Electron Devices, Vol. 41, No. 5, pp. 643-647, May 1994.
[12] David R. Pehlke, Dimitris Pavlidis “Evaluation of the Factors Determining HBT High-Frequency Performance by Direct Analysis of S-Parameter Data” IEEE Trans. Microwave Theory and Techniques, Vol. 40, NO. 12, pp. 2367-2373, Dec. 1992.
[13] Liou, J.J. “Reliability of AlGaAs/GaAs heterojunction bipolar transistors: an overview” IEEE Device, Circuit and System, pp. 14-21, 1998.
[14] Bashar, S.A.; Amin, F.A.; Rezazadeh, A.A.; Crouch, M.A. “Characteristics of AlGaAs/GaAs and InGaP/GaAs HBTs at high temperature” EDMO, pp. 126-131, 1996.
[15] Bahl, S.R.; Camnitz, L.H.; Houng, D.; Mierzwinski, M.; Turner, J.; Lefforge, G. “Reliability investigation of InGaP/GaAs heterojunction bipolar transistors” Electron Device Meeting, pp. 815-818, 1995
指導教授 辛裕明(Yue-Ming Hsin) 審核日期 2000-7-19
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