博碩士論文 88226002 詳細資訊




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姓名 黃庭文(Ting-Wen Huang)  查詢紙本館藏   畢業系所 光電科學與工程學系
論文名稱 氮化鋁鎵/氮化鎵異質接面金屬-半導體-金屬光檢測器之研究
(AlGaN/GaN heterojunction metal-semiconductor-metal photodetector)
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摘要(中) 本論文係利用有機金屬氣相沉積技術分別成長氮化鋁鎵/氮化鎵階變與漸變異質接面結構試片,對試片做X-射線繞射,霍爾量測等基本特性量測,與製作蕭特基二極體量測金屬與試片接觸的蕭特基位障及理想因子,最後製作金屬-半導體-金屬光偵測器。量測元件暗電流、照光電流響應及光頻譜響應等特性,並使用光學傳輸矩陣計算光通過元件的反射、穿透及吸收等參數,計算元件量子效率,同時分析其特性差異成因。
摘要(英) The Schottky type metal-semiconductor-metal (MSM) ultraviolet Photodetectors based on GaN/AlGaN heterostructure material systems are reported. The Schottky contacts were made with Au metal. The dark and illuminated current-voltage characteristics were studied.
關鍵字(中) ★ 蕭特基接觸
★ 光檢測器
★ 異質接面
★ 氮化鋁鎵
★ 氮化鎵
關鍵字(英) ★ heterojunction
★ AlGaN
★ GaN
★ Photodetector
論文目次 第一章 緒論………………………………………………………1
第二章 元件工作原理與製作……………………………………3
2.1 基本理論概述………………………………………………3
2.1.1 金屬-半導體接面理論…………………………………3
2.1.2蕭特基接面理論…………………………………………4
2.2 光檢測器工作原理…………………………………………6
2.2.1 金屬-半導體-金屬光檢測器工作原理…………………6
2.3 元件設計……………………………………………………7
2.3.1 磊晶結構………………………………………………8
2.3.2 元件結構………………………………………………9
2.3.3 蕭特基二極體元件製程………………………………9
2.3.4 金屬-半導體-金屬光檢測器製程……………………11
2.4 量測技術原理………………………………………………12
2.4.1 X射線繞射原理………………………………………12
2.4.2 霍爾量測原理…………………………………………13
2.4.3 歐傑電子能譜分析………………………………………13
2.4.4 電容-電壓量測原理……………………………………13
2.4.5 暗電流與光電流的直流量測原理………………………14
2.4.6 光傳輸矩陣理論原理……………………………………16
第三章 實驗設計與結果討論………………………………………19
3.1 實驗設計…………………………………………………19
3.2 實驗結果與討論…………………………………………20
3.2.1 X射線繞射量測………………………………………20
3.2.2 霍爾量測……………………………………………20
3.2.3 歐傑電子能譜分析……………………………………22
3.2.4 蕭特基二極體電壓-電流特性量測…………………22
3.2.5 金屬-半導體-金屬光檢測器電壓-電流特性量測……23
3.2.6 金屬-半導體-金屬元件暗電流衰減量測……………26
3.2.7 金屬-半導體-金屬電容-電壓量測……………………28
第四章 結論…………………………………………………………29
參考文獻………………………………………………………………33
圖……………………………………………………………………39
表……………………………………………………………………72
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指導教授 李清庭(Ching-Ting Lee) 審核日期 2002-7-10
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