193nm深紫外光學薄膜之研究

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姓名

劉旻忠(Ming-Chung Liu) 查詢紙本館藏

畢業系所

光電科學與工程學系

論文名稱

193nm深紫外光學薄膜之研究
(The research of optical thin films in DUV at 193nm)

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摘要(中)

本文中主要研究探討波長193nm深紫外光之光學薄膜，材料以氟化鎂(MgF2)、氟化鑭(LaF3)、氟化鋁(AlF3)與氟化釓(GdF3)四種為主，氟化鎂和氟化鑭以熱阻舟蒸鍍(Resistive Heating Boat Evaporation)與電子束蒸鍍(Electron Beam Gun Evaporation)的方式製鍍光學薄膜，而氟化鋁(AlF3)與氟化釓(GdF3)則只以熱阻舟蒸鍍為主，主要探討薄膜的光學特性、機械特性(應力)、微觀結構與雷射破壞(Laser Damage)。
本文並以離子助鍍(Ion Assisted Deposition)方式，研究離子助鍍對薄膜的影響；在薄膜後處理方面則是藉由高溫退火、紫外光照射與雷射退火的方式來對氟化物薄膜處理，研究對膜質特性的影響，希望藉由離子助鍍以及各種後處理的方式來達到改變膜質，進而達到提高折射率、降低光學損耗以及提高雷射損壞的閥值等。
最後以四種氟化物互相搭配，以抗反射膜和高反射鏡的設計方式，實際製作成品並量測多層膜的特性，加以分析和討論。如此由單一膜層的特性到多層膜堆應用作一系列完整的研究，最後並且給予四種氟化物製鍍參數上的建議。

摘要(英)

Optical coating technologies in the deep-ultraviolet at 193nmhave has been researched. Magnesium fluoride thin films and lanthanum fluoride thin films were deposited by resistive heating boat (RH) and electron beam evaporation (EB). Aluminum fluoride thin films and gadolinium fluoride thin films were prepared by RH. The relation of fluorides thin films between the microstructures (including cross section morphology, surface roughness and crystalline structure), the optical properties (including refractive index and optical loss), laser-induced damage threshold (LIDT) and mechanical properties (stress) were investigated. The characteristics and influence of thin films were also studied by ion-assisted deposition (IAD), thermal annealing, ultraviolet light irradiation and laser annealing. The surface roughness, optical loss, stress and LIDT of the films were improved after these treatment.
Anti-reflection coatings and multi-layers coatings were designed and deposited by using above four fluoride materials. Then the characteristics of coatings were discussed and compared with each other. Finally, the best deposition parameter of the four fluoride materials were suggested by this research.

關鍵字(中)

★ 雷射破壞
★ 光學薄膜
★ 氟化鎂
★ 氟化鑭
★ 氟化鋁
★ 氟化釓
★ 微觀結構
★ 光學特性
★ 折射率
★ 光學損耗
★ 應力

關鍵字(英)

★ Refractive Index
★ Laser-Induced Damage Threshold (LIDT)
★ Optical thin films
★ MgF2
★ LaF3
★ GdF3
★ AlF3
★ Microstructures
★ Optical Properties
★ Stress
★ Optical Loss

論文目次

中文摘要………………………………………………………………………………I
英文摘要………………………………………………………………………………II
目錄……………………………………………………………………………………III
圖目錄…………………………………………………………………………………V
表目錄…………………………………………………………………………………XII
第一章緒論……………………………………………………………………………1
1-1研究動機……………………………………………………………………………1
1-2研究方法……………………………………………………………………………2
1-3氟化物的材料特性…………………………………………………………………3
1-4文獻回顧……………………………………………………………………………5
第二章基本原理………………………………………………………………………7
2-1能帶間隙( Energy Band Gap )…………………………………………………7
2-2薄膜應力(Stress)......…………………………………………………………10
2-3 SZM (Structure Zone Model)模型……………………………………………12
2-4雷射破壞(Laser Damage)…………………………………………………………13
第三章研究方法………………………………………………………………………16
3-1實驗設備……………………………………………………………………………16
3-1-1基板的準備………………………………………………………………………16
3-1-2鍍膜機的架構……………………………………………………………………16
3-1-3實驗參數…………………………………………………………………………17
3-2量測方法與儀器……………………………………………………………………22
3-2-1光學薄膜特性的量測……………………………………………………………22
3-2-2微觀結構的量測………………………………………………………23
3-2-3薄膜應力的量測………………………………………………………26
3-2-4薄膜的成分分析………………………………………………………27
3-2-5 LIDT的量測…………………………………………………………27
第四章結果與討論 ……………………………………………………………………29
4-1氟化鎂單層膜的特性討論…………………………………………………………29
4-1-1熱阻舟蒸鍍氟化鎂薄膜的特性…………………………………………………29
4-1-2電子槍蒸鍍氟化鎂薄膜的特性…………………………………………………35
4-1-3熱阻舟蒸鍍(RH)和電子束蒸鍍(EB)氟化鎂薄膜之比較………………………41
4-2氟化鑭單層膜的特性討論…………………………………………………………46
4-2-1熱阻舟製鍍氟化鎂薄膜的特性…………………………………………………46
4-2-2電子束蒸鍍氟化鑭薄膜的特性…………………………………………………53
4-2-3熱阻舟(RH)和電子束蒸鍍(EB)製鍍氟化鑭薄膜之比較………………………59
4-3氟化鋁單層膜的特性………………………………………………………………66
4-4氟化釓單層膜的特性結果與討論…………………………………………………73
4-5離子源助鍍對氟化物薄膜的影響…………………………………………………80
4-5-1熱阻舟蒸鍍氟化鎂薄膜輔之以離子源(IAD)助鍍………………………………80
4-5-2電子束蒸鍍氟化鎂薄膜輔之以離子源(IAD)助鍍………………………………86
4-5-3熱阻舟蒸鍍氟化鑭薄膜輔之以離子源(IAD)助鍍………………………………91
4-5-4電子束蒸鍍氟化鑭薄膜輔之以離子源(IAD)助鍍………………………………97
4-6退火對氟化物薄膜的影響…………………………………………………………102
4-6-1退火對氟化鎂薄膜的影響………………………………………………………102
4-6-2退火(Annealing)對氟化鑭薄膜的影響…………………………………………109
4-6-3退火(Annealing)對氟化鋁與氟化釓薄膜的影響………………………………119
4-7多層模的分析與討論…………………………………………………………………121
第五章結論………………………………………………………………………………131
參考文獻……………………………………………………………………………………134

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指導教授

李正中(Cheng-Chung Lee)

審核日期

2005-7-20

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