錫銅無鉛銲料與Ni基材界面反應之研究

以作者查詢圖書館館藏

、以作者查詢臺灣博碩士

、以作者查詢全國書目

、勘誤回報

、線上人數：22

、訪客IP：3.14.247.150

姓名

陳文泰(Wen-Tai Chen) 查詢紙本館藏

畢業系所

化學工程與材料工程學系

論文名稱

錫銅無鉛銲料與Ni基材界面反應之研究
(Effect of Cu concentration on the interfacial reactions between Ni and Sn-Cu solders)

相關論文

★ Au濃度Cu濃度體積效應於Sn-Ag-Cu無鉛銲料與Au/Ni表面處理層反應綜合影響之研究	★ 球矩陣式電子封裝中鎳與鉛錫合金及鉛鉍錫合金界面反應之研究
★ Sn-3.5Ag無鉛銲料與BGA墊層反應之研究	★ 矽鍺半導體材料與鈷矽鍺化合物間相平衡與擴散之探討
★ 58Bi-42Sn無鉛銲料與球矩陣封裝中Au/Ni/Cu墊層界面反應之研究	★ 金濃度對球矩陣構裝銲點剪力強度影響之研究
★ 927℃ Nb-Si-Ge與600℃ Cu-Si-Ge兩三元平衡相圖之研究	★ 以Lactobacillus reuteri菌發酵glycerol生成reuterin做為生物組織材料天然滅菌劑的探討
★ 電遷移效應對錫微結構影響之探討	★ 先進半導體封裝技術中之金脆效應及其有效抑制方法
★ SnAgCu無鉛銲料與BGA之Au/Ni墊層反應之研究	★ Reuterin的發酵生成與化學合成及其在生物組織材料上的應用
★ 覆晶封裝中電遷移效應導致之銅溶解現象	★ 一種兼具低消耗速率及抗氧化作用之銲點墊層材料
★ 覆晶接點與錫電路之電遷移微結構變化模式研究	★ 電遷移對銅原子在熔融錫鉛銲料中擴散行為之影響

檔案

[Endnote RIS 格式]

[Bibtex 格式]

[相關文章]

[文章引用]

[完整記錄]

[館藏目錄]

[檢視]

[下載]

本電子論文使用權限為同意立即開放。
已達開放權限電子全文僅授權使用者為學術研究之目的，進行個人非營利性質之檢索、閱讀、列印。
請遵守中華民國著作權法之相關規定，切勿任意重製、散佈、改作、轉貼、播送，以免觸法。

摘要(中)

隨著環保聲浪的抬起，目前工業界打算採用無鉛銲料，用來取代63Sn-37Pb含鉛銲料。本論文探討錫銅無鉛銲料與Ni間之反應，此一銲料在波銲製程或是迴銲製程上皆有其應用性。本研究探討液態Sn-Cu銲料中微量銅濃度的變化，與Ni基材之反應情形，此一研究，除上述液態反應研究外，本論文也深入探討固態Sn-Cu銲料與Ni之反應，發現一很有趣的現象，即銲料中Cu濃度的些許變化，大幅度的影響界面生成物之種類及形態。
本研究所選用的Sn-xCu銲料，其x分別為0.2、0.4、0.6、0.7、1及3 (wt.%)。在液態反應實驗中，發現微量銅濃度變化，造成界面上介金屬化合物的種類及形態明顯的不一樣。當銅濃度低時(Sn-0.2Cu)，界面上生成一層連續的(Ni1-xCux)3Sn4化合物；當Cu濃度高時(Sn0.6Cu ~ Sn1Cu) ，界面上生成(Cu1-yNiy)6Sn5化合物；而當銅的濃度介於上二者之間 (Sn-0.4Cu) 時，在界面上(Ni1-xCux)3Sn4及(Cu1-yNiy)6Sn5同時存在。
但在固態反應實驗中，Cu濃度變化的影響較不重要，此時溫度及時間的影響較為主要，在不同溫度及不同的反應時間下，界面上之化合物種類也不同。在反應溫度225℃，反應時間由25小時~400小時之間，不管Cu濃度變化如何，界面上之生成物永遠以二層存在，底下接近Ni層的為(Ni1-xCux)3Sn4相，其上頭化合物為(Cu1-yNiy)6Sn5。
在介金屬生長速率的分析上，本研究由液態反應實驗發現介金屬化合物遵循反應控制，而固態反應則遵循擴散控制。
由本研究結果發現，工業界選用Sn-Cu銲料時，對於Cu濃度的控制，必須非常的精確，因為只差0.2 wt.%的Cu濃度，界面上生成物種類及形態明顯不同，嚴重影響界面上化合物之機械性質。故銲料組成中Cu金屬濃度必須控制在0.1 wt.%之內，以確保產品品質。

摘要(英)

The eutectic 99.3Sn-0.7Cu solder (wt%, Sn-0.7Cu) is the most promising lead-free replacement for the eutectic Sn-Pb solder in wave-soldering applications. In this study, the effect of a small perturbation in the Cu concentration on the reaction between the Sn-0.7Cu solder and Ni was investigated. Specifically, four Sn-xCu solders (x = 0.2, 0.4, 0.7, and 1) were reacted with Ni at 250 degreesC. A slight variation in Cu concentration produced completely different reaction products. When the Cu concentration was low (x = 0.2), the reaction product was (Ni1-xCux)(3)Sn-4. At high Cu concentrations (x = 0.7 and 1), the reaction product was (Cu1-yNiy)(6)Sn-5. When the Cu concentration was in-between (x = 0.4), both (Nil-xCux)(3)Sn-4 and (Cu1-yNiy)(6)Sn-5, formed. The above findings were rationalized using the Cu-Ni-Sn isotherm. the results of this study imply that the Cu concentration must be strictly controlled in industrial production to produce the desired intermetallic at the interface.

關鍵字(中)

★ 波銲
★ 鎳
★ 錫銅
★ 無鉛銲料
★ 共晶

關鍵字(英)

★ wave-soldering
★ lead-free solder
★ Sn-0.7Cu

論文目次

頁數
摘要................................................................. ...Ⅰ
目錄....................................................................Ⅲ
圖目錄................................................................. ...Ⅴ
表目錄................................................................. ...Ⅹ
符號說明................................................................. ...XI
第一章緒論
1.1 研究背景................................................................1
1.1.1 微電子構裝............................................................1
1.1.1.1 構裝四層次......................................................1
1.1.1.2 構裝之演進......................................................4
1.1.1.3 針腳穿孔接合(PTH)構裝...........................................8
1.1.1.4 表面黏著技術(SMT)構裝-BGA、FC...................................9
1.1.2 銲接..................................................................14
1.1.3 銲料..................................................................19
1.1.4 無鉛銲料..............................................................22
1.2 研究目的................................................................25
第二章文獻回顧
2.1 二元及三元相圖.........................................................26
2.1.1 二元平衡相圖 ..........................................................26
2.1.1.1 Sn-Cu二元平衡相圖..................................................26
2.1.1.2 Sn-Ni二元平衡相圖..................................................26
2.1.1.3 Ni-Cu二元平衡相圖..................................................29
2.1.2三元平衡相圖...........................................................30
2.1.2.1 Sn-Cu-Ni三元平衡相圖...............................................30
2.2 界面反應...............................................................33
2.2.1 Sn/Ni反應.............................................................33
2.2.2 Sn/Cu反應.............................................................41
2.3 Pb-Sn銲料添加微量的Cu ( 0.1 wt.% - 5 wt.% )............................44
2.4 實驗規劃...............................................................51
第三章實驗方法及步驟
3.1 Ni與液態錫銅銲料反應....................................................52
3.1.1錫銅銲料製備.......................................................52
3.1.2 Ni與液態Sn-xCu銲料之界面反應......................................52
3.1.3試片處理、觀察及分析...............................................55
3.2 Ni與固態錫銅銲料反應....................................................61
3.2.1 Ni與固態Sn-xCu銲料之界面反應......................................61
第四章 Ni與液態Sn-xCu銲料反應之實驗結果與討論
4.1 Ni與液態Sn-xCu銲料之界面反應型態........................................64
4.1.1短反應時間(10分鐘).....................................................64
4.1.2界面生成物之XRD圖譜....................................................73
4.1.3 Ni與液態Sn-0.4Cu銲料之界面生成物型態.................................75
4.1.4 長反應時間(25小時)...................................................84
4.2介金屬之反應動力學.......................................................99
4.2.1 介金屬生長動力學.....................................................99
第五章 Ni與固態Sn-xCu銲料、Cu與液態Sn-yNi銲料反應之實驗結果與討論
5.1 Ni與固態Sn-xCu銲料之界面反應型態........................................103
5.1.1反應溫度：225℃........................................................105
5.1.2反應溫度：180℃........................................................113
5.1.3 反應溫度：160℃......................................................115
5.1.4 介金屬生長動力學.....................................................118
5.2 Cu與液態Sn-yNi銲料之界面反應型態........................................122
5.2.1 短反應時間(10分鐘~1小時).............................................122
第六章 Ni及Cu基材與液態純錫銲料反應之實驗結果與討論
6.1 Cu與液態Sn-0.7Cu銲料之界面反應型態......................................132
6.2 Cu與液態Sn-0.7Cu銲料之界面反應型態......................................136
6.2.1液態純錫銲料與Ni之反應.................................................136
6.2.2 液態純錫銲料與Cu之反應................................................141
第七章結論
7.1 結論................................................................. ...144
參考文獻................................................................. ...147

參考文獻

[ALL] J. Alloy Phase Diagrams, Vol. 4, No. 3, pp. 160-174, 1988.
[AVI] R. R. de Avillez, M. F. S. Lopes and A. L. M Silva, J. Mater. Sci. Eng A, 205, p. 209, 1996.
[BAD] S. Bader, W. Gust and H.Hieber, “Rapid Formation of Intermetallic Compounds by Interdiffusion in the Cu-Sn and Ni-Sn Systems”, Acta Metallurgica et Materialia, Vol. 43(1), pp. 329-337, 1995.
[BAK] H. Baker, ASM Handbook v.3: Alloy Phase Diagrams, ASM, Materials Park, OH, p. 2355, 1992.
[BAN] K. Banerji and R. F. Darveaux, in Microstructures and Mechanical Properties of Aging Materials, ed. P. K. Liaw, R. Viswanathan, K. L. Murty, E. P. Simonen, and D. Frear, (Warrendale, PA: TMS), p. 431., 1993.
[BAR] F. Bartels and J. W. Morris, JR., Journal of Electronic Materials, Vol. 23(8), pp. 787-790, 1994.
[BEE] J. A. van Beek, S. A. Stolk and F. J. J. van Loo, Z Metallkde, 73, p. 441, 1982.
[BLA] H. D. Blair, T. Pan and J. M. Nicholson, Electronic Components and Technology Conference, 6, p. 259, 1998.
[BRA] E. Bradley, K. Snowdon and R. Gedney, “Lead-Free Update”, Circuits Assembly, Dec., pp. 30-33, 1999.
[CHA1] D. J. Chakrabarti, D. E. Laughlin, S. W. Chen, Y. A. Chang, in “ASE Handbook Vol.3 Alloy Phase Diagrams”, ed. by H. Baker, ASE International, Materials Park, Ohio, pp. 2-173, 1992.
[CHA2] D. J. Chakrabarti, D. E. Laughlin, S. W. Chen, Y. A. Chang, in “Binary Alloy Phase Diagrams”, ed. by Thaddeus B. Massalski, ASE International, Materials Park, Ohio, Vol.2, pp. 1442-1446, 1990.
[CHE] Y. C. Chen, S. J. Lee and C. C. Lee, “High Temperature Cu-Sn Joints Manufactured by a 250℃ Fluxless Bonding Process”, IEEE Trans. on CPMT, 5, pp. 206-210, 1994.
[CRU] S. Crum, “Targeting Lead-Free Solutions”, EP&P, June, pp. 28-35, 1999.
[DAR] R. F. Darveaux, K. Banerji, A. Mawer, and G. Dody, in Ball Grid Array Technology, ed. J. K. Lau, (New York, McGraw-Hill), p. 379., 1995.
[EAS] J. T. Eash and C. Upthegrove, Transactions of the American Institute of Mining, Metallurgical and Petroleum Engineers (Transactions AIME), p. 221-249, 1933.
[ERN] C. Ernhart and S. Scarr, presented at the ACYF research conference, New Directions in Child and Family Research, 1991.
[FRE] D. R. Frear, J. W. Jang, J. K. Lin, and C. Zhang, JOM, June, 28, 2001.
[GLA1] J. Glazer, Int. Mater. Rev., 40, p. 65, 1995.
[GUP] K. P. Gupta, Indian Institute of Metals, Vol. 1, pp. 195-218, 1990.
[GUR] D. Gur and M. Bamberger, Acta Meter., 46, p. 4917, 1998.
[HAH] T. Hahn, International Tables for Crystallography, 3rd ed., KAP, Boston, 1992.
[HAI] J. Haimovich, Welding Research Supplement, Vol. 68(3), pp. 102s-111s, 1989.
[HAN] Handbook of Ternary Alloy Phase Diagrams, pp. 9818-9837.
[HAY] A. Hayashi, C. R. Kao and Y. A. Chang, “Reactions of Solid Copper with PureLiquid Tin and Liquid Tin saturated with Copper”, Scripta Materialia, Vol. 68(3), pp. 37(4), pp. 393-398, 1997.
[HO1] C. E. Ho, Y. M. Chen, and C. R. Kao, “Reaction kinetics of solder-balls with pads in BGA during reflow soldering,” J. Electron. Mater., 28, p. 1231, 1999.
[HO2] C. E. Ho, Y. L. Lin, and C. R. Kao, “Strong effect of Cu concentration on the reaction between lead-free microelectronic solders and Ni,” Chemistry of Materials, 14(3), p. 949, 2002.
[HO3] C. E. Ho, R. Zheng, G. L. Luo, A. H. Lin, and C. R. Kao, “Formation and resettlement of (AuxNi1-x)Sn4 in solder joints of ball-grid-array packages with the Au/Ni surface finish,” J. Electron. Mater., vol. 29, pp. 1175-1181, 2000.
[HOW] R. T. Howard, “Optimization of Indium-Lead Alloys for Controlled CollapseChip Connection Application”, IBM J. RES. Develop., 26, pp. 36-40., 1982.
[KAN1] S. K. Kang and V. Ramachandran, Scripta Metall., 14, p. 421, 1980.
[KAN2] S. K. Kang, R. S. Rai and S. Purushothaman, J. Electron. Mater., 25, p. 1113, 1996.
[KAO1] C. R. Kao, Mater. Sci. Eng. A, 238, p. 196, 1997.
[KAO2] C. E. Kao，「清潔生產研討會」講義，中央大學，p. 18, 2001。
[KAO3] C. R. Kao, “Microstructures Developed in Solid-liquid Reactions: Using Cu-Sn Reaction, Ni-Bi Reaction and Cu-In Reaction as Examples”, Materials Science and Engineering, 238, pp. 196-201, 1997.
[KIM1] H. K. Kim, H. K. Liou and K. N. Tu, J. Appl. Phys. Lett., 66, p. 2337, 1995.
[LAU] J. H. Lau, “Flip Chip Technologies”, McGraw-Hill, New York, 1995.
[LEE1] M. S. Lee, C. M. Liu and C. R. Kao, J. Electron. Mater., 28, p. 57, 1999.
[LEE2] N. C. Lee，「1998先進電子封裝技術趨勢研討會」講義，新竹，p. 81，1998。
[LEE3] N. C. Lee, Soldering and Surface Mount Tech., 6, p. 65, 1997.
[LEE4] J. S. Lee and K. Mukherjee, Materials Science and Engineering, A117, pp. 167-173, 1989.
[LEE5] C. C. Lee, C. Y. Wang and G. Matijasevic, “A Fluxless Oxidation-Free Bonding Technology U”, IEEE Trans. on CPMT, 3, (1994), pp. 595-599.
[MA] C. H. Ma and R. A. Swalin, Acta Meter., 8, pp. 388, 1960.
[MAR] Z. Marinkovic and V. Simic, Thin Solid Films, Vol. 98, pp. 95-100, 1982.
[MAT] G. Matijasevic, Y. C. Chen and C. C. Lee, “Copper-Tin Multilayer Composite Solder for Fluxless Processing”, The International Journal of Microcircuits and Electronic Packaging, 17, pp. 108-117, 1994.
[MEI] Z. Mei, M. Kaufmann, A. Eslambolchi, and P. Johnson, “Brittle interfacial fracture of PBGA packages soldered on electroless Nickel/immersion gold,” 1998 Electron. Comp. Tech. Conf. Proceeding, pp. 952-961, 1998.
[MFG] Soldering, in Circuits MFG, pp. 17, 1980.
[MIK] M. Miki and Y. Ogin, Transactions of the Japan Institute of　Metals, Vol. 25, No. 9, pp. 593-602, 1984.
[MIN] M. L. Minges et al., “Packaging”, Electronic Materials Handbook, Vol. 1, ASM International, Materials Park, Ohio, 1989.
[MUL] Multicore Company, Which Solder? Which Flux? Product Detail, (www.multicore.com).
[MUR1] Y. Murakami, Y. Watanabe, T.　Kanaizuka and S. Kachi, Transactions of the Japan Institute of Metals, Vol. 22, No. 8, pp. 551-557, 1981.
[MUR2] Y. Murakami and S. Kachi, Transactions of the Japan Institute of Metals, Vol. 24, No. 1, pp. 9-17, 1983.
[NAS1] P. Nash and A. Nash, in “ASE Handbook Vol.3 Alloy Phase Diagrams”, ed. by H. Baker, ASE International, Materials Park, Ohio, pp. 2-318, 1992.
[NAS2] P. Nash and A. Nash, in “Binary Alloy Phase Diagrams”, ed. by Thaddeus B. Massalski, ASE International, Materials Park, Ohio, Vol.3, pp. 2863-2864, 1990.
[PLU] W. J. Plumbridge, J. Mater. Sci,. 31, p. 2501, 1996.
[RAB] J. D. Raby and R. W. Johnson, “Is a Lead-Free Furture Wishful Thinking ?”,EP&P, August, pp. 18-20, 1999.
[RAH] A. Rahn, The Basics of Soldering, John Wiely & Sons, New York, 1993.
[RID] E. Rideout, 1994 IEEE/CPMT Int. Elect. Manufact. Tech. Symp., pp. 388, 1994.
[SAU1] N. Saunders and A. P. Miodownik, in “ASE Handbook Vol.3 Alloy Phase Diagrams”, ed. by H. Baker, ASE International, Materials Park, Ohio, pp. 2-166, 1992.
[SAU2] N. Saunders and A. P. Miodownik, in “Binary Alloy Phase Diagrams”, ed. by Thaddeus B. Massalski, ASE International, Materials Park, Ohio, Vol.2, pp. 1481-1483, 1990.
[SEN] Senate Bills S.729 and S.2637 by Senator Reid; House Bills H.2479 and H.2922 by Representative Cardin.
[SER] D. P. Seraphim, R. C. Lasky and C-Y. Li, “Principle of Electronic Package”, McGraw-Hill, New York, 1993.
[SHI] K. Shimizu, T. Nakanishi, K. Karasawa, K. Hashimoto and K. Niwa, “SolderJoint Reliability of Indium-Alloy Interconnection”, J. Elect. Mat., .24, pp. 39-45, 1996.
[SO] A. C. K. So, Y. C. Chan and J. K. L. Lai, “Aging Studing of Cu-Sn Intermetallic Compounds in Annealed Surface Mount Solder Joints”, IEEE Trans. Comp. Packg. Manuf. Tech. B, 20, pp. 161-166, 1997.
[TU1] K. N. Tu, “Interdiffusion and Reaction in Bimetallic Cu-Sn Thin Films”, Acta Metall., 21, pp. 347-354, 1973.
[TU2] K. N. Tu, “Kinetics of Interfacial Reaction in Bimetallic Cu-Sn Thin Films”, Acta Metall., 30, pp. 947-952, 1982.
[TU3] K. N. Tu, “Cu/Sn Interfacial Reactions: Thin-Film Case Versus Bulk Case”, Mat. Chem. and Phys., 46, pp. 217-223, 1996.
[TUM1] R. R. Tummala, E. J. Rymaszewski, “Microelectronics Packaging Handbook”, Van Nostrand Reinhold, 1989.
[TUM2] R. R. Tummala, E. J. Rymaszewski and A. G. Klopfenstein, “Microelectronics Packaging Handbook”, Chapman, New York, 1997.
[VAR] J. Vardaman, “What’s Driving the Lead-Free Movement ?”, EP&P, Nov., p. 76, 1999.
[VES] J. Veszelka, Mitt. Berg. U. Hutt. Abt. K. Ung. Hochschule Berg. U. Forstwesen, Vol. 4, pp. 163-185, 1932.
[VIA] P. T. Vianco, P. F. Hlava and A. C. Kilgo, “Intermetallic Compound Layer Formation between Copper and Hot-Dipped 100In, 50In-50Sn, 100Sn and 63Sn-37Pb Coatings”, Journal of Electronic Materials, 23, pp. 583-594, 1994.
[VIL] P. Villars and L. D. Calvert, Pearson’’s Handbook of Crystallographic Data for Intermetallic Phases, ASM International, Materials Park, OH, 1991.
[VUO] V. Vuorinen, P. Obersdorf, F. J. J. van Loo, and J. K. Kivilahti (unpublished research).
[WAC] E. Wachtel and E. Bayer, Zeitschrift fuer Metallkunde, Vol. 75(1), p. 61-69, 1984.
[WAS1] R. J. Wassink, Soldering in Eelectronics, Electrochemical Pub. Ltd., p. 99, 1984.
[WAS2] R. J. Wassink, Soldering in Eelectronics, 2nd ed., Electro-chemical Pub. Ltd., p. 523, 1989.
[WHI] C. E. T. White, “Indium : High-Technology Metal”, Advanced Materials &Processes inc. Metal Progress, 69-72, 1997.
[孔令臣] 孔令臣，“覆晶凸塊技術”，工業材料，139, p. 155, 1998。
[何政恩1] 何政恩、高振宏，中國材料學會1998年年會論文集，[H]，p. 730, 1998。
[何政恩2] 何政恩、蕭本俐、高振宏，中國材料學會1999年年會論文集，H43, 1999。
[何政恩3] 何政恩博士論文，國立中央大學化工所，2002。
[呂宗興] 呂宗興，電子構裝技術的發展歷程，工業材料115期，p. 49, 1996。
[李明勳] 李明勳碩士論文，國立中央大學化工所，1998。
[李柔儀] 李柔儀碩士論文，國立清華大學化工所，2001。
[林安宏] 林安宏碩士論文，國立中央大學化工所，2001。
[林志豪] 林志豪碩士論文，國立清華大學化工所，2001。
[洪敏雄] 洪敏雄、游善溥，電子構裝用無鉛焊錫，科儀新知，第20卷第2期，pp. 57-66, 1998。
[高振宏] TPCA教育訓練課程，Solder Bump Technologies, 2002。
[徐敏雯] 徐敏雯碩士論文，國立中央大學化工所，2001。
[陳琪] 陳琪碩士論文，國立中央大學化工所，1999。
[張俊彥] 張俊彥，鄭晃忠，”積體電路製程及設備技術手冊”，中華民國電子材料與元件協會等出版，pp. 7-85, 1998。
[溫啟宏] 溫啟宏, “蛻變中的台灣封裝業”, 工業材料，139, pp. 92-96, 1998。
[劉家明] 劉家明碩士論文，國立中央大學化工所，2000。
[劉益銘] 劉益銘博士論文，國立台灣大學材料所，2000。
[賴玄金] 賴玄金, “從IPC Work’99 會議看無鉛銲錫電子構裝之應用現況與發展趨勢”,工業材料, 158, pp. 99-107, 2000。
[蕭麗娟] 蕭麗娟碩士論文，國立中央大學化工所，2002。
[羅金龍] 羅金龍碩士論文，國立中央大學化工所，2001。

指導教授

高振宏(C. R. Kao)

審核日期

2002-7-8

推文