銦、錫金屬、合金與其氧化物的陽極拋光行為探討

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蕭文助(Wen-Chu Hsiao) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

銦、錫金屬、合金與其氧化物的陽極拋光行為探討
(On the Electrochemical Polishing of In, Sn, In-Sn Alloy and Their Oxides.)

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摘要(中)

本研究在探討銦、錫金屬、合金及其氧化物的電化學拋光行為。利用動態陽極極化行為的掃瞄及探討，找出不同系統中合適的拋光條件，而陽極定電位實驗則是用來驗證結果。金屬和合金電化學拋光的觀念應用在金屬氧化膜的系統，如ITO (銦錫氧化物)薄膜電化學拋光的可行性評估。
由金屬銦的電化學拋光結果顯示，含有G2和S2代號成分為合適的溶液配方。成分代號G用來調整溶液的黏滯性，成分代號S則是作為鈍化劑(passivator)及參雜劑(contaminant)。鈍化劑可促進鈍化膜的生成，但參雜劑(contaminant)則破壞鈍化膜。鈍化及破壞氧化膜兩種機制的協調所引起的電解拋光而造成平滑及光亮的表面。
含有這種系列成分的溶液在銦錫氧化膜（ITO）的電解拋光應用上是可行的，其表面粗糙度（Rmax）可由拋光前的16nm降低為拋光後的9nm。

摘要(英)

In this thesis, electrochemical polishing of In, Sn and 90.5In-9.5Sn alloy was explored. Anodic potentiodynamic polarization was used to screen the adequate conditions for various polishing systems. Anodic potentiostatic method was applied to confirm the electropolishing results. The concept of electrochemical polishing on metals and alloys was applied to metal oxide systems, such as ITO (indium-tin oxide) system to estimate the feasibility of electrochemical polishing.
Results from electropolishing of metallic indium showed that, the solution containing component G2 and S2 is a suitable electrolyte. The component G is for adjusting the viscosity of electrolyte and the component S acts either as a passive reagent or a contaminant reagent. Passive reagent provides a passive film but contaminate reagent breaks-down the oxide film. The compromise of passivation and oxide-broken down gives rise to electropoishing thereby leading to a smooth and bright surface.
The application of electropolishing to indium tin oxide (ITO) film in the solution containing a series of GS1010 is successfully. The maximum roughness for the ITO film prior to electropolishing is 16 nm, but diminished to 9 nm after electropolishing.

關鍵字(中)

★ 銦錫氧化膜
★ 電解拋光
★ 表面粗糙度

關鍵字(英)

★ surface roughness
★ electropolishing
★ indium tin oxide

論文目次

Index
Acknowledgement Ⅰ
Abstract (Chinese) II
Abstract (English) Ⅲ
Index Ⅳ
List of Tables Ⅸ
List of Figures Ⅹ
Chapter 1 Introduction 1
1-1: Background of the Research 1
1-1-1: Properties of the indium, tin and indium tin oxide (ITO) 1
1-1-2: Application of indium tin oxide (ITO) films 2
1-1-3: Introduction of the Organic Light Emitting Display (OLED) 2
1-1-4: ITO Film as an Anode in Organic Light Emitting Display (OLED) 4
1-1-5: Effects of the ITO Surface Roughness on OLED 5
1-2: Purposes of the Research 5
Chapter 2 Fundamental Theory and Literature Review 7
2-1: Chemical Properties of the Metal Indium and Tin 7
2-1-1: Chemical Properties of the metal Indium 7
2-1-2: Chemical Properties of the metal Tin 7
2-2: History and Advantages of Electropolishing 8
2-2-1: History of the Electropolishing 8
2-2-2: Advantages of Electropolishing 9
2-3: Principles of the Electropolishing 10
2-3-1: How It Works of Electropolishing 10
2-3-2: Characteristics of Current-Voltage Curves for the Polishing Process 14
2-3-3 Product of Surface Film for Electropolishing 16
2-3-4: The Hoar Diagram 18
2-4: Parameters Related to Electropolishing 20
2-4-1: Compositions of Solution 20
2-4-2: Potential Difference and Current Density 21
2-4-3: Temperature of the Electrolyte 22
2-4-4: Agitation of the Electrolyte 23
2-4-5: Time of Electropolishing 23
Chapter 3 Experimental Procedures 25
3-1 Types of Sample and Prepared 25
3-1-1: Types of sample 25
3-1-2: Prepared the alloys 25
3-2: Samples pretreatment 26
3-2-1: Anodic Potentiodynamic Polarization 26
3-2-1.1: Metal and alloys 26
3-2-1.2: Indium tin oxide (ITO) film 26
3-2-2: Electropolishing 26
3-2-2.1: Metals and alloys 26
3-2-2.2: Indium tin oxide (ITO) film 27
3-3: Equipments 27
3-3-1: Anodic potentiodynamic polarization 27
3-3-2: Electropolishing 28
3-4: Research of the electrochemical 28
3-4-1: Choose the electrolyte in electrochemical method 28
3-5: Research of the best parameter for electropolishing 30
3-6: Analysis Equipments 30
3-6-1: Measurement of potentiodynamic polarization and electropolish current 30
3-6-2: Observations of OM and SEM 30
3-6-3: AFM surface morphology observation and analysis 31
3-6-4: ESCA surface oxide analysis 31
Chapter 4 Results 32
4-1: Electropolishing of Indium 32
4-1-1: Composition of the Solution 32
4-1-2: Concentration Effect in the Solution 32
4-1-2.1: Concentration of the component S 32
4-1-2.2: Concentration Effect of the component G 35
4-1-3: Effect of the gap between electrodes 36
4-1-4: Effect of Electropolishing time 37
4-1-5: Effect of agitation 38
4-2: Electropolishing of 90.5In-9.5Sn Alloy 41
4-2-1: Composition of the Solution 43
4-2-1.1: Concentration effect of N in the GSN solution system 43
4-2-1.2: Concentration effect of S in the GSN solution system 44
4-2-1.3: Concentration effect of G in the GSN solution system 45
4-2-1.4: Concentration effect of C in the GSC solution system 46
4-2-2: Effect of rotation rate in the GSN122 solution 47
4-3: Electropolishing for indium tin oxide (ITO) film 49
4-3-1: Crystal Structure of ITO film 49
4-3-2: Concentration effect of G and S in the Solution 49
4-3-2.1: Concentration effect of the component G 49
4-3-2.2: Concentration effect of the component S 50
4-3-3: Effect of the gap between the electrodes 52
4-3-4: Effect of Electropolishing voltage 53
4-3-5: Effect of the Electropolishing time 54
4-3-6: Effect of the agitation 54
4-3-7: Crystal structure of ITO films before and after Electropolishing 55
Chapter 5 Discussion 57
5-1: Surface Analysis for Metal Indium and 90.5In-9.5Sn Alloy 57
5-1-1: Anodic Potentiodynamic Polarization for Pure Indium and
90.5In-9.5Sn Alloy 57
5-1-2: SEM morphology for the Surface Oxide on the surface of Indium
and90.5In-9.5Sn Alloy 57
5-1-3: XPS Analysis of Surface Oxide for Pure Indium and 90.5In-9.5Sn Alloy 59
5-1-3.1: XPS Analysis of Surface Oxide for Pure Indium 59
5-1-3.2: XPS Analysis of Surface Oxide for 90.5In-9.5Sn Alloy 61
5-2: Surface Analysis for Indium Tin Oxide (ITO) Film 63
5-2-1: Anodic Potentiodynamic Polarization for ITO film 63
5-2-2: XPS Surface Analysis of Indium Tin Oxide (ITO) film 63
5-3: Anodic Potentiodynamic Polarization for 90.5In-9.5Sn alloy,
90.5In-9.5Sn alloy oxidized and Indium Tin Oxide (ITO) Film 65
Chapter 6 Conclusions 67
Chapter 7 Future Work 70
References 71

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指導教授

林景崎(Jing-Chie Lin)

審核日期

2002-7-27

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