大尺寸晶圓之化學機械研磨實驗研究

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姓名

謝勝在(Sheng-Tsai Hsieh) 查詢紙本館藏

畢業系所

機械工程學系

論文名稱

大尺寸晶圓之化學機械研磨實驗研究
(A General Optimization for Slurry Injection During Chemical Mechanical Polishing)

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至系統瀏覽論文 ( 永不開放)

摘要(中)

摘要
化學機械研磨簡稱CMP，是現在唯一能夠提供VLSI製程全面平坦化的技術。這項平坦化技術的原理是利用類似磨刀這種機械式研磨，配合適當的化學助劑，把晶片表面上沉積層突出的輪廓加以磨平，以提供下一層電路一個平坦的表面。化學原理與機械原理都提供平坦化的效用，本篇論文著重在機械研磨機制的討論。在晶圓與研磨墊之間的研磨液之流體行為是機械研磨的主要機制，本篇論文以一CMP流場模擬機，採用灰階度方法將CCD影像圖由影像擷取軟體處理，使用這種技術可估算出進入晶圓與研磨墊間之研磨液的量與其分布。實驗所得的灰階度與非均勻性有很高的重複性且與實際的移除率與均勻度之趨勢一致，故可以比較簡單的灰階度取代實際的移除率量測。利用這個技術，本篇論文提出大尺寸晶圓之化學機械研磨研磨液最佳化注入研究。實驗顯示12吋晶圓之研磨液最佳注入位置為IP<30%。最佳注入量在低轉速下建議使用注入量Q=100-150 ml/min，而在高轉速下建議使用Q>200 ml/min的流量。此外亦研究改變晶圓與研磨墊中心距離對灰階度與非均勻性的影響。實驗數據顯示，晶圓邊緣跨越研磨墊中心距離時，可藉著提高研磨墊轉速而達到與未跨中心相近的移除率，但是跨越中心會影響研磨液的傳遞效率。因此建議跨越中心距離Rwe<3cm有最佳的效果。

摘要(英)

A chemical mechanical polishing model is developed In order to understand the general optimization for slurry injection position and injection rate. Slurry injection efficiency is predicted by maximum removal rate and minimum nonuniformity. We measure the mean gray scale (MGS) to replace the removal rate since the stably repeated data of MGS agrees in trend with the removal rate and it is easier measure. The characteristics of the rim of wafer crossing the center of polishing pad is also studied and we can reduce the equipment size to keep the same removal rate with a little influence on the nonuniformity by increase the rotation rate when the rim of wafer crossing the center of pad.

關鍵字(中)

★ 研磨液
★ 化學機械研磨
★ 晶圓

關鍵字(英)

★ Slurry
★ Chemical Mechanical Polishing
★ Wafer

論文目次

目錄
目錄 Ⅰ
表目錄 III
圖目錄 Ⅳ
符號說明 Ⅴ
第一章緒論 1
1.1 化學機械研磨簡介 1
1.2化學機械研磨的幾何原理 3
1.3文獻回顧 4
1.3.1 CMP流場模擬 5
1.3.2 CMP流場實驗 6
第二章化學機械研磨流場模擬實驗裝置及方法 9
2.1實驗設備 9
2.2影像分析方法 10
2.3實驗方法 11
2.4參數設計 12
第三章結果與討論 14
3.1實驗的重複性與穩定性 14
3.2最佳注入位置與最佳注入量 15
3.3晶圓與研磨墊中心距離對化學機械研磨的影響 17
3.4晶圓邊緣跨越研磨墊中心的最佳注入條件 18
第四章結論 20
參考文獻 22
附表 24
附圖 35

參考文獻

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13. 蔡明義蔡志成蔡明蒔 “應用田口法於晶片化學機械平坦化製程參數之實驗探討” 中國機械工程學會第十六屆全國學術研討會, 新竹市, 國立清華大學, 第五冊, 541, 中華民國八十八年十二月.
14. J. Coppeta, C. Rogers, L. Racz, A. Philipossian and F. B. Kaufman, “Investigating slurry transport beneath a wafer during chemical mechanical polishing processes”, J. Electrochem. Soc., 147, 1903 (2000).
15. F. C. Chou, M. N. Fu and M. W. Wang, “A general optimization for slurry inject during chemical mechanical planarization”, J. Electrochem. Soc., 147, 3873 (2000).
16. A. Modak, P. Monteith and N. Parekh, “Components of within-wafer nonuniformity in a dielectric CMP process.”, Proc. Of CMP-MIC Conference, Santa Cruz, 169 (1997).

指導教授

周復初(Fu-Chu Chou)

審核日期

2002-6-25

推文