摘要(英) |
Abstract
The developing of wireless communication system is satisfied by human moving service, such as cellular mobile telephone, PDA, wireless LAN, and satellite communication. Microwave circuits are used within RF section of wireless communication system. The power amplifier is controlled by the size, cost, and performance of the RF section, hence the power amplifier is very important in the wireless communication system.
This thesis is major to study MMIC (monolithic microwave integrated circuit) and MIC (microwave integrated circuit) power amplifier. In the MMIC power amplifier demonstrated, we successfully design the power amplifier that can be applied different frequency of the wireless communication system. The MIC power amplifier on Al2O3 substrate, we successfully combine active elements (InGaP/GaAs HBT), a clear-room thin-film process passive elements (inductor, capacitance, resistor), and wire bonding technology to fabricate the two-stage MIC power amplifier that can be used on wireless LAN communication system. We use network analyzer (HP-8510C) and load-pull system to measure all microwave power amplifiers in the RF laboratory. The measurements include S parameter, power gain, output power, PAE, IM3, and ACPR. And we analyze the results further. |
參考文獻 |
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