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姓名 張勻禎(Yun-Chen Chang)  查詢紙本館藏   畢業系所 電機工程學系
論文名稱 具非晶異質接面及溝渠式電極之矽質金屬-半導體-金屬光偵測器的暗電流特性
(Dark-Current Characteristics of the Si-based MSM-PD with Amorphous Heterojunction and Trench Electrodes)
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摘要(中) 本論文的主要目的是探討具非晶接面及溝渠式電極之矽質金屬-半導體-金屬光偵測器的暗電流基本機制,並且藉以降低元件之暗電流而提升其訊雜比。利用梯度高能隙非晶合成物結構及附加不鏽鋼濾網的電漿助長化學氣相沈積系統沈積非晶薄膜等技巧可降低元件的暗電流,且效果良好。非晶位障層對金屬-半導體-金屬光偵測器而言,不僅可以降低暗電流,更可提升暗電流對溫度的穩定性。
摘要(英) In this thesis, dark-current characteristics of the Si-based MSM-PD with amorphous-crystalline heterojunction and trench electrodes were studied. The current transport mechanisms across the amorphous-crystalline heterojunction and the metal-semiconductor Schottky barrier had been discussed, and the obtained concepts, e.g. using materials having a higher activation energy and a higher Schottky barrier, could be helpful to suppress the device dark current. Although using trench electrodes might result in a little higher device dark current, but the benefits were the improvements of the device knee voltage, responsivity, and response speed. However, the photo-to-dark current ratio is an important issue for a MSM-PD. So the device responsivity should be considered when its dark-current was suppressed, and accordingly, a graded high bandgap amorphous alloy could be employed for the amorphous-crystalline heterojunction to enhance device photo-to-dark current ratio. Plasma damages on the crystalline silicon (c-Si) substrate, caused by ion bombardments during deposition of amorphous layer, could increase the dark-current magnitude of an a-Si:H/c-Si MSM-PD, because the induced defect states on c-Si substrate served as generation centers in the reverse-biased junction. The plasma damages could be reduced significantly by using a deposition technique i.e. attaching a s.s. reticulate mesh to the upper (cathode) electrode of the PECVD (plasma-enhanced chemical vapor deposition) system during deposition of the i-a-Si:H layer.
關鍵字(中) ★ 非晶矽
★ 金屬-半導體-金屬光偵測器
★ 暗電流
關鍵字(英) ★ amorphous silicon
★ metal-semiconductor-metal photodetector
★ dark current
論文目次 摘 要………………………………………………………………….(Ⅲ)
表 目………………………………………………………………….(Ⅳ)
圖 目………………………………………………………………….(Ⅴ)
第一章 序論……………………………………………………………1
第二章 元件製作與量測………………………………………………6
2-1 操作原理……………………………………………6
2-2 製作流程……………………………………………9
2-3 響應度……………………………………………..18
2-4 反應速度…………………………………………..18
第三章 暗電流特性與模擬…………………………………………..21
3-1 非晶矽-晶矽異質接面……………………………21
3-2 暗電流曲線擬合…………………………………..26
3-3 溝渠式電極Medici模擬………………………….33
3-4 蕭特基位障………………………………………..33
第四章 實驗結果與討論……………………………………………..43
4-1 抑制暗電流………………………………………..43
4-2 熱穩定度…………………………………………..43
4-3 非晶合成物………………………………………..45
4-4 電漿損傷…………………………………………..51
第五章 結論…………………………………………………………..69
參考文獻………………………………………………………………..71
附錄 A………………………………………………………………….76
附錄 B………………………………………………………………….77
致謝……………………………………………………………………..78
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指導教授 洪志旺(Jyh-Wong Hong) 審核日期 2002-6-24
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