博碩士論文 90521046 詳細資訊


姓名 郭添賞(Tien-Shang Kuo)  查詢紙本館藏   畢業系所 電機工程學系
論文名稱 高速低功率P型矽鍺金氧半電晶體之研究
(study of high speed and low power SiGe pMOSFET)
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摘要(中) 高速低功率P型矽鍺金氧半電晶體之研究
摘 要
本論文的研究重點,在於研究矽鍺金氧半電晶體在高速低功率電路之應用,因此我們實際製作了矽鍺通道結構的P型金氧半電晶體,並利用基板偏壓及低頻雜訊等量測方法來論証該元件應用於高速低功率電路之可行性與優越性。
在本次的研究中,我們藉由電流-電壓等量測結果,驗證出矽鍺通道P型金氧半電晶體比傳統的bulk Si元件有較小的臨界電壓 (Vth)、較低的漏電流 (約低了2-3個數量級)、較高的驅動電壓、較寬廣的次臨界操作區、及較高的傳輸特性 (提升約2倍);這些結果都在在顯示出了矽鍺元件具有較低的功率散逸、較寬的動態範圍 (dynamic range) 、較快的傳輸速度及較高的操作頻率等,因此極適合應用於高速低功率電路。我們也有系統地利用基板偏壓和低頻雜訊的等量測方式來量化SiGe pMOSFETs的低頻雜訊表現,並成功的論証了矽鍺pMOSFET和傳統的bulk Si元件相比有較低的雜訊表現,也因此提高了電路的雜訊邊際 (noise margin)。經由本論文實驗的成果成功地證明了SiGe/Si異質結構的金氧半電晶體在RF/micropower電路的應用上是具有很大潛力的。
摘要(英) Study of high speed and low power SiGe pMOSFET
Abstract
We have demonstrated a high performance Si1-xGex pMOSFET technology for low power and low noise circuit applications. The incorporation of 30% Ge in the strained Si1-xGex channel provides a drive current enhancement by a factor of 2.5 over its counterpart Si bulk pMOSFETs and manifests a marked advantage of two decade in exponential operating region allowing both lower power consumption and a wider dynamic range for low power circuit applications. Body effects on DC and low frequency noise characteristics in Si1-xGex pMOSFETs have also been investigated. The relative spectral density of low frequency noise in SiGe pMOSFET’s is found to be significantly lower than in Si devices. The experimental results promise the potential of SiGe/Si heterostructure MOSFETs in radio-frequency micropower applications.
關鍵字(中) ★ 矽鍺
★ 矽鍺金氧半電晶體
★ 高速低功率元件
★ 低功率元件
關鍵字(英) ★ high speed and low power
★ low power
★ SiGe
★ SiGe pMOSFET
論文目次 目錄
摘要……………………………………………………………………Ⅰ
致謝……………………………………………………………………Ⅱ
圖目錄…………………………………………………………………Ⅲ
表目錄………………………………………….…………………….Ⅶ
序章 論文結構介紹…………………………………………………Ⅷ
第一章 介紹………………………………………………………...…1
1-1研究動機………………………………………………….......…1
1-2研究目的…………………………………………………...…....3
1-3 strain SiGe材料簡介…………………………………………...4
第二章 矽鍺通道金氧半電晶體之低頻雜訊模擬與分析……….....9
2-1 前言……………………………………………………….….....9
2-2 低頻雜訊的介紹………………………………………….….....9
2-3 元件結構與模擬…………………………………………...…..10
2-4 結果與討論………………………………………………..…...13
2-5 結論………………………………………………………….....17
第三章 矽鍺金氧半電晶體製程……………………………………..25
3-1 前言…………………………………………………….….…...25
3-2 製程步驟………………………………………………….…....25
3-3 以UV&OZONE (PR stripe)縮小通道長度……………….......31
第四章 矽鍺金氧半電晶體之電性量測與分析……………………..39
4-1 前言……………………………………………………….…....39
4-2 直流 (I-V)量測…………………………………………….....39
4-3 低頻雜訊量測……………………………………………..…...41
4-4 Si/SiGe異質結構金氧半電晶體在低功率電路上的應用…....42
4-5結論…………………………………………………………......46
第五章 結論與未來展望……………………………………………..59
參考文獻資料………………………………………………………….61
參考文獻 參考文獻資料
[1] Pelgrom, M. J. M. et al., IEDM Tech. Dig. 1998; 915
[2] T. P. Pearsall, J. C. Bean, R. People, and A. T. Fiory, " GexSil-x, modulation- doped p-channel field-effect transistors," Proc. I stint. Symp. Silicon Molecular Beam Epitaxy, ECS Soft Bound Proc. 85-7, p.366, edited by J. C.Bean (Pennington, NJ, 1985)
[3] H. Dambkes, H. J. Herzog, H. Jorke, H. Kibbel, and E. Kasper, "The n-channel SiGe/Si moduladon-doped filed-effect transistor," IEEE Trans. Electron Devices. ED-33, pp. 633, 1986.
[4] Li PW, Liao WM. Analysis of Si/SiGe channel pMOSFETs for deep-submicron scaling. Solid-State Electron 2002;46:39-44
[5] McWhorter A. L., 1/f noise and germanium surface properties, Semiconductor Surface Physics, Proceedings of the Conference on the Physics of Semiconductor Surfaces, 1956; 207-228
[6] Kleinpenning TGM, Vandamme LKJ. Model for 1/ noise in metal-oxide-semiconductor transistors. J Appl Phys 1981;52:1594
[7] Hung KK, Ko PK, Hu C. A unified model for the flicker noise in the metal-oxide-semiconductor transistors. IEEE Trans Electron Dev 1990;37:654-64
[8] Terzioglu E, McCord MA, pease RF. A two-dimensional numerical model for two frequency noise in short channel MOSFETs . In: proceedings of the 13th Biennial University/Government/Industry Microelectronics Symposium. 1999. p. 47-51
[9] TMA MEDICI version 2002.2, Tech nology Modeling Associates, Inc., 2000.
[10] Chun SK, Wang KI. Effective mass and mobility of holes in strained Si1-xGex layers on (001) Si1-yGey substrate. IEEE Trans Electron Dev 1992;39:2153-64
[11] Manku T., McGregor J. M., Nathan A. and Roulston D. J., Drift hole mobility in strained and unstrained Doped Si1-xGex alloys, IEEE Trans. Electron Devices, 1993; 40: 1990-1996
[12] Caughey DM. and Thomas R. E., Carrier mobilities in silicon empirically related to doping and field, Proceeding of IEEE, 1967; 55: 2192-2193
[13] Hung K. K., Ko P. K., Hu C., Cheng Y. C., Random telegraph noise of deep-submicrometer MOSFETs, IEEE Electron Device Letters, 1990; 11: 90-92
[14] Mathew S. J., Niu G. Dubbelday W. B., Cressler J. D., Ott J. A., Chu J. O., Mooney P. M., Kavanagh K. L., Meyerson B. S., and Lagnado I., Hole confinement and its impact on low-frequency noise in SiGe pFETs on Sapphire, IEDM Tech. Dig., 1997; 815-818.
[15] F. Assaderaghi, D. Sinitsky, S. Parke, J. Bokor, P. K. Ko, and C. Hu, “A Dynamic Threshold Voltage MOSFET (DTMOS) for Ultra-low Voltage Operation,” in IEDM Tech. Dig.,1994, pp. 809-812.
[16] F. J. De la Hidalga-W., M. J. Deen, E. A. Guiterrez-D, and F. Balestra, “Effect of the forward biasing the source-substrate junction in n-metal-oxide-semiconductor transistor for possible low power complementary metal-oxide-semiconductor integrated circuit’s applications,” J. Vac. Sci. Technol. B., vol. 16, no. 4, pp.1812-1817, 1998.
[17] T. Tanaka, Y. Momiyama, and T. Sugii, “Fmax enhancement of dynamic threshold voltage MOSFET (DTMOS) under ultra-low supply voltage,” in IEDM Tech. Dig., 1997, pp.423-426.
[18] T. L. Hsu, D. Tang, and J. Gong, “Low-Frequency Noise Properties of Dynamic-Threshold (DT) MOSFET’s,” IEEE Electron Device Lett., vol. 20, pp.532-534, 1999
197] M. J. Deen and O. Marinov, “Effect of Forward and Reverse Substrate Biasing on Low-frequency Noise in Silicon PMOSFETs,” IEEE Trans. Electron Devices, vol. 49, pp. 409-413, 2002.
[20] S. J. Mathew, G. Niu, W. B. Dubbelday, J. D. Cressler, J. A. Ott, J. O. Chu, “Hole Confinement and Its impact on Low-Frequency Noise in SiGe pFETs on Sapphire,” IEDM Tech Dig., 1997; pp.815-818.
[21] P. W. Li and W. M. Liao, “Low-Frequency Noise Analysis of Si/SiGe Channel pMOSFETs,” Solid-State Electronics, vol. 46, p.2283-2287, 2002
指導教授 李佩雯(Pei-Wen Li) 審核日期 2003-7-16

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